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31.
Enhancing echo cancellation via estimation of delay 总被引:2,自引:0,他引:2
Youhong Lu Fowler R. Tian W. Thompson L. 《Signal Processing, IEEE Transactions on》2005,53(11):4159-4168
The advent of packetized audio transmission, such as voice over IP (VoIP), has resulted in challenging requirements for echo cancellation technology. One key aspect of this technology is the need to characterize, quickly and accurately, the echo paths in the transmission media. Echo paths consist of a constant time delay with no echo signal and active regions in which the echo signal is present. When an adaptive filter echo cancellation algorithm is used, its performance can be greatly increased, and its complexity can be reduced if it is only applied to the active regions. This requires an algorithm to estimate the constant delay and locate the active regions. Traditionally, delay estimation has been based on direct application of cross-correlation. This method has poor performance because the input signals are highly correlated and has a high implementation cost because many cross-correlation lags have to be computed for longer time delays. The delay estimation addressed in this paper has two major advantages over the traditional methods. The first is that it has improved performance because the input signals are processed to have less correlation. The second is that the implementation cost is significantly reduced because fewer cross-correlation lags are computed, and an efficient method to estimate lags is created. 相似文献
32.
This study used different metals to modify Rh/Al2O3 catalysts for NO reduction in a simulated waste incineration flue gas containing 6% O2. The characteristics of the modified catalysts were analyzed using BET, TEM and XRD. The results of the experiment reveal that Na addition can significantly affect the properties of Rh/Al2O3 catalysts on the BET surface area and Rh metal dispersion. Furthermore, Na addition was found to significantly enhance the NO conversion of Rh/Al2O3 at 250–350 °C. On the contrary, Cu, Ni, and Co addition was found to have slight suppression effects. 相似文献
33.
Min Chan Kim Dong Won Lee Chang Kyun Choi 《Korean Journal of Chemical Engineering》2008,25(6):1239-1244
When a horizontal homogeneous solid is melted from below, convection can be induced in a thermally unstable melt layer. In
this study the onset of buoyancy-driven convection during time-dependent melting is investigated by using similarly transformed
disturbance equations. The critical Rayleigh numbers based on the melt-layer thickness are found numerically for various conditions.
For small superheats, the present predictions approach the well known results of classical Rayleigh-Bénard problems, that
is, critical Rayleigh numbers are located between 1,296 and 1,708, regardless of the Prandtl number. However, for high superheats
the critical Rayleigh number increases with an increase in phase change rate but with decrease in Prandtl number. 相似文献
34.
介绍了热电联产成本的两种计算方法,指出了两种计算方法的局限性.对热电联产节能效果进行了量化分析,在按热量法对供热比计算的基础上,提出了修正热量法.此方法体现了热电联产的优越性,为发电企业增加了经济效益. 相似文献
35.
Tian Xiao Qing Huo Liu 《Antennas and Propagation, IEEE Transactions on》2008,56(3):765-773
In this paper, we present an enlarged cell technique (ECT) to avoid the time step reduction encountered in the conformal finite-difference time-domain (CFDTD) method due to small irregular cells truncated by metallic boundaries. We focus our efforts on the discussion of the accuracy and stability of the ECT and its comparison with other conformal methods, especially the one called the uniformly stable conformal (USC) method. We also provide a simplified ECT, which is much easier to implement. In the ECT, a stability criterion is first constructed to identify instable irregular cells, i.e., those having so small an area to cause instability. Those instable cells are then enlarged into their adjacent cells to obtain a large, stable area. Careful treatment is performed on the communication between the intruding and intruded cells in terms of electromotive force by keeping the total electromotive force conservative. This technique is verified by several 3-D numerical experiments. Results show that the ECT is second-order accurate and numerically stable at the regular Courant time step limit. 相似文献
36.
高白度漂白商品浆的白度已从通常的88%~90%提高到更高的水平,达到92%.这种高白度的要求导致了纸厂使用高价格光学漂白剂,以及过量使用这种添加剂的环境风险. 相似文献
37.
MIP-CGP工艺专用催化剂CGP-1的开发与应用 总被引:11,自引:3,他引:8
阐述了生产汽油组分满足欧Ⅲ排放标准并多产丙烯的催化裂化工艺(简称MIP-CGP)专用催化剂(简称CGP-1)的研究开发与工业应用结果。CGP-1催化剂的基质具有良好的容炭性能,使活性组元受到良好保护,其优势作用在第二反应区得以充分发挥,具有更高的氢转移活性和强的汽油小分子烯烃裂化活性。中国石化九江分公司和镇海炼化公司的MIP-CGP工业试验标定结果表明,与常规FCC相比,采用CGP-1催化剂的MIP-CGP技术在生产烯烃体积分数小于18%的汽油组分的同时,丙烯产率达到8%以上。此外,汽油诱导期大幅提高,抗爆指数增加;总液体收率有所提高,干气产率下降,焦炭选择性良好。 相似文献
38.
镍氢电池负极用低成本储氢合金的研究 总被引:1,自引:0,他引:1
研究了ABS型储氢合金在低Co含量条件下,随B组元替代元素Co,Al,Si等含量的变化对合金电化学性能的影响规律,同时研究了A组元中不同La/Ce比对合金电化学性能的影响情况。结果表明,随合金中Co含量的降低,合金的活化性能和放电容量得以改善,但合金的循环寿命下降也比较明显;在试验范围内,随Al元素的加入,合金的循环寿命得以改善,但材料的放电容量和活化性能均有所下降;随合金La/Ce比的降低,合金的放电容量略有下降,但其循环寿命和放电电压平台有较大提高。 相似文献
39.
Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs 总被引:1,自引:0,他引:1
Chung-Hsun Jang Sheu J.K. Tsai C.M. Shei S.C. Lai W.C. Chang S.J. 《Photonics Technology Letters, IEEE》2008,20(13):1142-1144
The following letter presents a study regarding GaN-based light-emitting diodes (LEDs) with p-type AlGaN electron blocking layers (EBLs) of different thicknesses. The study revealed that the LEDs could endure higher electrostatic discharge (ESD) levels as the thickness of the AlGaN EBL increased. The observed improvement in the ESD endurance ability could be attributed to the fact that the thickened p-AlGaN EBL may partly fill the dislocation-related pits that occur on the surface of the InGaN-GaN multiple-quantum well (MQW) and that are due to the strain and the low-temperature-growth process. If these dislocation-related pits are not partly suppressed, they will eventually result in numerous surface pits associated with threading dislocations that intersect the InGaN-GaN (MQW), thereby reducing the ESD endurance ability. The results of the experiment show that the ESD endurance voltages could increase from 1500 to 6000 V when the thickness of the p-AlGaN EBL in the GaN LEDs is increased from 32.5 to 130 nm, while the forward voltages and light output powers remained almost the same. 相似文献
40.