Simultaneous nonrigid registration, segmentation, and tumor detection in MRI guided cervical cancer radiation therapy

External beam radiation therapy (EBRT) for the treatment of cancer enables accurate placement of radiation dose on the cancerous region. However, the deformation of soft tissue during the course of treatment, such as in cervical cancer, presents significant challenges for the delineation of the target volume and other structures of interest. Furthermore, the presence and regression of pathologies such as tumors may violate registration constraints and cause registration errors. In this paper, automatic segmentation, nonrigid registration and tumor detection in cervical magnetic resonance (MR) data are addressed simultaneously using a unified Bayesian framework. The proposed novel method can generate a tumor probability map while progressively identifying the boundary of an organ of interest based on the achieved nonrigid transformation. The method is able to handle the challenges of significant tumor regression and its effect on surrounding tissues. The new method was compared to various currently existing algorithms on a set of 36 MR data from six patients, each patient has six T2-weighted MR cervical images. The results show that the proposed approach achieves an accuracy comparable to manual segmentation and it significantly outperforms the existing registration algorithms. In addition, the tumor detection result generated by the proposed method has a high agreement with manual delineation by a qualified clinician.     

采用Chirp变换实现宽带DRFM的技术

宽带线性调频雷达,采用Dechirp信号处理降低信号处理带宽,并能获取大带宽信号处理增益;但对雷达干扰而言,由于采用非匹配处理,无法在较低处理带宽条件下实现DRFM干扰。文中采用Dechirp信号处理的思想,给出了基于Chirp变换的宽带DRFM实现技术,该方法通过Dechirp变换,DRFM和Chirp变化重构雷达信号,理论分析和仿真验证表明,能较好保留雷达照射信号的时频特征,同时较大地降低了信号处理带宽。     

运用太赫兹时域光谱技术定量分析柴油的含硫量

测量柴油样品的太赫兹时域光谱并对其含硫量进行了定量计算.在0.2 ～1.5 THz范围内,柴油的吸收系数随着太赫兹频率和硫含量呈规律性递增.基于这一变化关系建立起了硫含量与太赫兹吸收系数和频率的多元非线性模型,通过测量柴油的太赫兹光谱代入此模型即可计算出柴油的硫含量.这一结果为太赫兹时域光谱技术应用于柴油含硫量的无损快速检测奠定了理论基础,显示出巨大的应用前景.     

Abrupt motion tracking via intensively adaptive Markov-chain Monte Carlo sampling

The robust tracking of abrupt motion is a challenging task in computer vision due to its large motion uncertainty. While various particle filters and conventional Markov-chain Monte Carlo (MCMC) methods have been proposed for visual tracking, these methods often suffer from the well-known local-trap problem or from poor convergence rate. In this paper, we propose a novel sampling-based tracking scheme for the abrupt motion problem in the Bayesian filtering framework. To effectively handle the local-trap problem, we first introduce the stochastic approximation Monte Carlo (SAMC) sampling method into the Bayesian filter tracking framework, in which the filtering distribution is adaptively estimated as the sampling proceeds, and thus, a good approximation to the target distribution is achieved. In addition, we propose a new MCMC sampler with intensive adaptation to further improve the sampling efficiency, which combines a density-grid-based predictive model with the SAMC sampling, to give a proposal adaptation scheme. The proposed method is effective and computationally efficient in addressing the abrupt motion problem. We compare our approach with several alternative tracking algorithms, and extensive experimental results are presented to demonstrate the effectiveness and the efficiency of the proposed method in dealing with various types of abrupt motions.     

数字电源中的总线技术

由于IT技术对电源技术的不断渗透,数字电源技术应运而生,由于数字电源具有控制灵活、系统结构变化灵活、调节、维护方便和造价低等一系列优点,代表了电源技术的发展方向。而在数字电源中,总线技术发挥了很重要的作用,例如FC、PMBus、SMBus等在数字电源中得到了广泛的应用,并且世界上也成立了相关的论坛和组织,促进了有关总线技术在电源产品中的应用,由于总线技术的引入,极大地提高了电源的工作性能和可维护性,本文主要介绍数字电源中常用的PMBus（电源管理总线）和SMBus（系管理总线）总线技术。     

Microstructure transformations induced by modified-layers on pentacene polymorphic films and their effect on performance of organic thin-film transistor

Phenyltrimethoxysilane was used to modify SiO₂ insulator and significantly enhanced the pentacene based organic thin-film transistors (OTFTs). The crystal structure, surface morphology, molecular structure and microstructure of pentacene polymorphic films with and without the modifications were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and contact angle meter. XRD studies reveal a decreased tilt angle (θ_T) of pentacene molecules from c-axis toward a-axis, indicating that polymorphs transformation from the “triclinic bulk” phase to the “thin film” phase and orthorhombic phase occurs. AFM images show that the surface roughness of gate insulators has no influence on performance of the pentacene based OTFT. These results provide strong evidence that the performance improvement of OTFT after PhTMS modification of SiO₂ insulator surface is related to the microstructure transformation of the semiconductor. It suggests that the modified-layer may alter the molecular geometry and further induce structural phase transitions in the pentacene films for the performance improvement.     

正交矩形波导复合耦合槽特性分析

两个正交矩形波导公共宽边上偏离中心线的耦合斜槽称为复合耦合槽。考虑波导壁的厚度，根据等效原理和缝隙口面切向磁场的连续条件建立一对耦合积分方程，利用矩量法进行求解，给出复合耦合槽的谐振长度、散射参量随缝隙的倾角、偏离波导中心线距离的关系曲线     

板状非线性介质表面耦合波的反射和透射

本文详细分析了平面波激励非线性介质后介质的非线性极化、麦克斯专方程及其解、广义的反射和透射定律；导出了板状非线性介质表面任意阶耦合波的反射场和透射场；对介质满足相位匹配和泵浦波正入射下的场进行了深入的讨论；给了非线性介质表面的布儒斯特角。     

GaN-based light emitting diodes on nano-hole patterned sapphire substrate prepared by three-beam laser interference lithography

Nano-hole patterned sapphire substrates (NHPSSs) were successfully prepared using a low-cost and high-efficiency approach, which is the laser interference lithography (LIL) combined with reactive ion etching (RIE) and inductively coupled plasma (ICP) techniques. Gallium nitride (GaN)-based light emitting diode (LED) structure was grown on NHPSS by metal organic chemical vapor deposition (MOCVD). Photoluminescence (PL) measurement was conducted to compare the luminescence efficiency of the GaN-based LED structure grown on NHPSS (NHPSS-LED) and that on unpatterned sapphire substrates (UPSS-LED). Electroluminescence (EL) measurement shows that the output power of NHPSS-LED is 2.3 times as high as that of UPSS-LED with an injection current of 150 mA. Both PL and EL results imply that NHPSS has an advantage in improving the crystalline quality of GaN epilayer and light extraction efficiency of LEDs at the same time.     

Microstructure and optoelectronic properties of gallium- titanium-zinc oxide thin films deposited by magnetron sputtering

Gallium-titanium-zinc oxide(GTZO) transparent conducting oxide(TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic properties of GTZO thin films on Ar gas pressure were observed. The X-ray diffraction(XRD) and scanning electron microscopy(SEM) results show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increment of Ar gas pressure, the microstructure and optoelectronic properties of GTZO thin films will be changed. When Ar gas pressure is 0.4 Pa, the deposited films possess the best crystal quality and optoelectronic properties.