High‐Performance Ultraviolet Photodetector Based on a Few‐Layered 2D NiPS3 Nanosheet

2D materials, represented by transition metal dichalcogenides (TMDs), have attracted tremendous research interests in photoelectronic and electronic devices. However, for their relatively small bandgap (<2 eV), the application of traditional TMDs into solar‐blind ultraviolet (UV) photodetection is restricted. Here, for the first time, NiPS₃ nanosheets are grown via chemical vapor deposition method. The nanosheets thinning to 3.2 nm with the lateral size of dozens of micrometers are acquired. Based on the various nanosheets, a linearity is found between the Raman intensity of specific A_g modes and the thickness, providing a convenient method to determine their layer numbers. Furthermore, a UV photodetector is fabricated using few‐layered 2D NiPS₃ nanosheets. It shows an ultrafast rise time shorter than 5 ms with an ultralow dark current less than 10 fA. Notably, this UV photodetector demonstrates a high detectivity of 1.22 × 10¹² Jones, outperforming some traditional wide‐bandgap UV detectors. The wavelength‐dependent photoresponsivity measurement allows the direct observation of an admirable cut‐off wavelength at 360 nm, which indicates a superior spectral selectivity. The promising photodetector performance, accompanied with the controllable fabrication and transfer process of nanosheet, lays the foundation of applying 2D semiconductors for ultrafast UV light detection.     

氮气或氧气气氛退火的氧化铪材料电荷泄漏情况研究

本文中, 使用开尔文探针显微镜,研究了不同退火气氛(氧气或氮气)情况下氧化铪材料的电子和空穴的电荷保持特性。与氮气退火器件相比,氧气退火可以使保持性能变好。横向扩散和纵向泄露在电荷泄露机制中都起了重要的作用。 并且,保持性能的改善与陷阱能级深度有关。氮气和氧气退火情况下,氧化铪存储结构的的电子分别为0.44 eV, 0.49 eV,空穴能级分别为0.34 eV, 0.36 eV。 最后得到,不同退火气氛存储器件的电学性能也与KFM结果一致。对于氧化铪作为存储层的存储器件而言,对存储特性的定性和定量分析,陷阱能级,还有泄漏机制研究是十分有意义的。     

2D MoN1.2-rGO Stacked Heterostructures Enabled Water State Modification for Highly Efficient Interfacial Solar Evaporation

Improving interfacial solar evaporation performance is crucial for the practical application of this technology in solar-driven seawater desalination. Lowering evaporation enthalpy is one of the most promising and effective strategies to significantly improve solar evaporation rate. In this study, a new pathway to lower vaporization enthalpy by introducing heterogeneous interactions between hydrophilic hybrid materials and water molecules is developed. 2D MoN_1.2 nanosheets are synthesized and integrated with rGO nanosheets to form stacked MoN_1.2-rGO heterostructures with massive junction interfaces for interfacial solar evaporation. Molecular dynamics simulation confirms that atomic thick 2D MoN_1.2 and rGO in the MoN_1.2-rGO heterostructures simultaneously interact with water molecules, while the interactions are remarkably different. These heterogeneous interactions cause an imbalanced water state, which easily breaks the hydrogen bonds between water molecules, leading to dramatically lowered vaporization enthalpy and improved solar evaporation rate (2.6 kg m⁻² h⁻¹). This study provides a promising strategy for designing 2D-2D heterostructures to regulate evaporation enthalpy to improve solar evaporate rate for clean water production.     

微波炉用磁控管碳化钍钨阴极断裂失效分析

本文采用扫描电镜、X射线残余应力分析仪、金相显微镜等工具分析了微波炉用磁控管碳化钍钨阴极的断裂失效机理,碳化后钍钨阴极较粗大的晶粒与内应力是其断裂的主要原因。     

应用粒子动态分析仪研究水力旋流器流场

利用粒子动态分析仪(PDA),对水力旋流器内固相颗粒流场做了全面的测定,得出水力旋流器内固相颗粒的流态、浓度及粒度分布,为进一步查清水力旋流器的工作机理提供了重要理论依据。     

亚稳态惰性原子与SOCl_2传能反应产物SO(A)的发射光谱和强度分析

本文在流动余辉装置上,利用亚稳态惰性气体原子[He(2~3S)、Ne(~3P_(0,2))、Ar(~3P_(0,2))]与SOCl_2的专能反应,在(230-430nm)波段观察到了产物的发射谱,光谱归属为自由基SO(A~3∏_(2,1,0)→X~3∑~-)的跃迁。对光谱强度分析表明:SO(A→X)的偶极跃迁矩Re随核间距明显地变化。通过拟合,找出了这一变化的关系。另外,本文还计算了SO(A~3∏_0→X~3∑~-)跃迁的Franck-Condon因子。     

Analysis and development of a signal injection technique usingtransmission lines embedded at phased array aperture

In a performance monitoring/fault isolation and correction (PM/FIC) system of a phased array antenna, a built-in transmission line embedded in the array aperture is used for signal injection to check the signal flow. The authors present an analysis of electromagnetic coupling between a twin-lead transmission line and a dipole element. An analysis of the coupling between a transmission line and a linear array of dipole elements over a ground plane has also been developed. The calculated data compared with the measured data favorably. A development of microstrip-line signal injectors embedded in an aperture of a 2D array of monopole excited parallel-plate waveguides has also been made. Measurements of the feed and aperture distributions have been made and the measured distributions follow the designed feed distribution closely     

Bandpass filtering effect in tapered asymmetrical twin-core optical fibres

The spectral coupling characteristics in asymmetrical twin-core optical fibres under fusion tapering are investigated experimentally. It is found that appropriate filtering can be achieved by fusion tapering. It is evident that, with suitable choice of tapering length and fibre parameters, it is possible to fabricate economic all-fibre bandpass filtering devices for various applications.<>     

A study of residual stress distribution through the thickness of p+ silicon films [thermal oxidation effects]

The effect of thermal oxidation on the residual stress distribution throughout the thickness of heavily-boron-doped (p⁺ ) silicon films is studied. The deflection of p⁺ silicon cantilever beams due to residual stress variation throughout the film thickness is studied for as-diffused and thermally oxidized films. Cantilevers of as-diffused p⁺ silicon films display a positive curvature (or a negative bending moment), signified by bending up of the beams. Thermal oxidation of the films prior to cantilever fabrication by anisotropic etching modifies the residual stresses in the p⁺ film, specially in the near-surface region (i.e. the top 0.3 to 0.5 μm for the oxidation times used here), and can result in beams with a negative curvature even when the oxide is removed from the p⁺ silicon cantilever surface subsequent to cantilever fabrication     

无接触法测量多晶硅材料的少子扩散长度

用微波光电导谱仪无接触、非破坏性地测量了多晶硅的微波光电导谱,推导了由光电导谱计算多晶硅样品的少子扩散长度和表面复合速度的计算方法,并由此算得了样品的少子扩散长度和表面复合速度。测试区域是一个直径为3mm的圆斑。这是一种简便而又准确的测试方法。这样的方法还适用于GaAs薄片材料少子扩散长度的测量和计算。