利用系统分析方法进行单井措施优选

油井措施增油一直是油田控制产量递减、含水上升的主要做法，但是随着油田开采程度加深，地下油水分布十分复杂，选择油水井措施难度越来越大。为此，运用系统分析方法进行单井措施优选，通过对区块水驱油、水驱水、井间干扰以及油井的液、油、含水率间关系，综合判断出区块内滞留区、死油区和动用好的区域，指出今后挖潜方向。此方法均应用动态数据，客观性较强、准确性较高，克服了以往选择单井措施的盲目性和主观性。并将该方法在大庆油田杏八、九区基础井网提液试验过程中得到应用，效果较好。     

芦笋保健搅拌酸奶的研制

芦笋是一种兼食品及较强保健功能的稀有蔬菜。对芦笋加工处理、发酵菌种选育驯化、辅料的选择、发酵工艺条件、搅拌方法等一系列的工艺探索,研制出色泽微翠绿、芦笋味典型并适合中老年消费者需求的保健型搅拌酸奶。     

无线收、发信机的设计

主要讲述移动通信中收、发信机的工作原理、基本结构和组成.在给出收、发信机原理框图的同时,着重分析了锁相环路的设计.     

激光导向伺服系统中满意PID调节器的LMI设计

利用带有图像处理功能的小型激光导向伺服系统,可以大大降低目标坐标测定仪操作手跟踪动态飞行目标的操作难度,从而提高激光回波率.与经典的矩阵分解方法不同,本文以线性矩阵不等式方法,研究了激光导向伺服系统的满意PID调节器设计问题.首先从约束指标的相容性出发,给出满足与给定圆形极点约束相容的输出方差的取值范围.然后,在此取值范围内,得到了求取同时满足上述两种约束的PID调节器参数的方法.靶场试验结果证明了其有效性.     

高粘稠性搅拌型刺梨酸奶的研制

以新鲜优质牛奶为原料，添加刺梨果浆，将保加利亚乳杆菌及嗜热链球菌以1：2混合作为发酵剂发酵，研制出具有刺梨风味的高粘稠性搅拌型酸奶。     

高铬锰白口铸铁的软化处理

研究了 4种退火工艺对高铬锰白口铸铁组织和硬度的影响规律。结果表明 ,采用 85 0℃保温 4h ,随后于 72 0℃保温 6h退火工艺 ,硬度最低为 36～ 38HRC ,机加工性能最好。     

Improvement of RCA transistor using RTA annealing after theformation of interfacial oxide

A polysilicon emitter RCA transistor (an ultra-thin interfacial oxide layer exists between polysilicon and silicon emitter) is presented which can operate at 77 K for the first time. An ultra-thin (1.5 nm) interfacial oxide layer is grown deliberately between polysilicon and silicon emitter using RCA oxidation and excellent device stability is obtained after rapid thermal annealing (RTA) treatment in nitrogen atmosphere. The RCA transistor exhibits good electrical performance at very low temperature for an emitter area of 3 × 8 μm². The maximum toggle frequency of a 1:2 static divider is 1.2 GHz and 732 MHz at 300 K and 77 K, respectively     

入侵检测及网络层安全的研究

随着计算机网络的迅速发展，网络安全问题正变得日益重要。文章介绍了计算机网络系统IP层安全概况和入侵者对IP层常采用的入侵手段，以及为防止这种入侵所采取的措施。     

Investigation of the source/drain asymmetric effects due to gate misalignment in planar double-gate MOSFETs

A planar double-gate SOI MOSFET (DG-SOI) with thin channel and thick source/drain (S/D) was successfully fabricated. Using both experimental data and simulation results, the S/D asymmetric effect induced by gate misalignment was studied. For a misaligned DG-SOI, there is gate nonoverlapped region on one side and extra gate overlapped region on the other side. The nonoverlapped region introduces extra series resistance and weakly controlled channel, while the extra overlapped region introduces additional overlap capacitance and gate leakage current. We compared two cases: bottom gate shift to source side (DG/spl I.bar/S) and bottom gate shift to drain side (DG/spl I.bar/D). At the same gate misalignment value, DG/spl I.bar/S resulted in a larger drain-induced barrier lowering effect and smaller overlap capacitance at drain side than DG/spl I.bar/D. Because of reduced drain-side capacitance, the speed of three-stage ring oscillator of DG/spl I.bar/S, with 20% gate misalignment length (L/sub mis/) over gate length (L/sub g/), or L/sub mis//L/sub g/=20%, was faster than that of two-gate aligned DG-SOI.     

天津通信企业IT信息网络支撑平台

从系统建设背景、关键技术、创新点及应用情况等方面介绍了天津市通信公司企业IT信息网络支撑平台是一个统一、高效、简洁的综合业务网络平台。