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51.
52.
改性乳化沥青的发展和应用概况 总被引:1,自引:0,他引:1
综述了改性乳化沥青的发展及应用概况,重点讨论了改性乳化沥青的生产、制备工艺、稳定性影响因素,并对国内外改性乳化沥青的应用情况加以概述。 相似文献
53.
From its foundation until 2004, ETRI has registered over 1,000 US patents. This letter analyzes the characteristics of these patents and addresses the explanatory factors affecting their citation counts. For explanatory variables, research team related variables, invention specific variables, and geographical domain related variables are suggested. Zero‐altered count data models are used to test the impact of independent variables. A key finding is that technological cumulativeness, the scale of invention, outputs in the electronic field, and the degree of dependence on the US technology domain positively affect the citation counts of ETRI‐invented US patents. The magnitude of international presence appears to negatively affect the citation counts of ETRI‐invented US patents. 相似文献
54.
提出了一种基于光纤环的光缓存器的结构,对结合半导体光放大器作光开关的此结构的物理模型进行了详细描述,并根据此模型分析了其增益、噪声、信噪比等方面的特性. 相似文献
55.
Chun-Tsen Lu Kun-Wei Lin Huey-Ing Chen Hung-Ming Chuang Chun-Yuan Chen Wen-Chau Liu 《Electron Device Letters, IEEE》2003,24(6):390-392
A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated. 相似文献
56.
57.
Mining constrained gradients in large databases 总被引:1,自引:0,他引:1
Dong G. Han J. Lam J.W.M. Pei J. Wangm K Zou W. 《Knowledge and Data Engineering, IEEE Transactions on》2004,16(8):922-938
Many data analysis tasks can be viewed as search or mining in a multidimensional space (MDS). In such MDSs, dimensions capture potentially important factors for given applications, and cells represent combinations of values for the factors. To systematically analyze data in MDS, an interesting notion, called "cubegrade" was recently introduced by Imielinski et al. [2002], which focuses on the notable changes in measures in MDS by comparing a cell (which we refer to as probe cell) with its gradient cells, namely, its ancestors, descendants, and siblings. We call such queries gradient analysis queries (GQs). Since an MDS can contain billions of cells, it is important to answer GQs efficiently. We focus on developing efficient methods for mining GQs constrained by certain (weakly) antimonotone constraints. Instead of conducting an independent gradient-cell search once per probe cell, which is inefficient due to much repeated work, we propose an efficient algorithm, LiveSet-Driven. This algorithm finds all good gradient-probe cell pairs in one search pass. It utilizes measure-value analysis and dimension-match analysis in a set-oriented manner, to achieve bidirectional pruning between the sets of hopeful probe cells and of hopeful gradient cells. Moreover, it adopts a hypertree structure and an H-cubing method to compress data and to maximize sharing of computation. Our performance study shows that this algorithm is efficient and scalable. In addition to data cubes, we extend our study to another important scenario: mining constrained gradients in transactional databases where each item is associated with some measures such as price. Such transactional databases can be viewed as sparse MDSs where items represent dimensions, although they have significantly different characteristics than data cubes. We outline efficient mining methods for this problem. 相似文献
58.
Ching-Te Chuang Bernstein K. Joshi R.V. Puri R. Kim K. Nowak E.J. Ludwig T. Aller I. 《Circuits and Devices Magazine, IEEE》2004,20(1):6-19
The generation-over-generation scaling of critical CMOS technology parameters is ultimately bound by nonscalable limitations, such as the thermal voltage and the elementary electronic charge. Sustained improvement in performance and density has required the introduction of new device structures and materials. Partially depleted SOI, a most recent MOSFET innovation, has extended VLSI performance while introducing unique idiosyncrasies. Fully depleted SOI is one logical extension of this device design direction. Gate dielectric tunneling, device self-heating, and single-event upsets present developers of these next-generation devices with new challenges. Strained silicon and high-permittivity gate dielectric are examples of new materials that will enable CMOS developers to continue to deliver device performance enhancements in the sub-100 nm regime. 相似文献
59.
关于我国钢铁工业发展战略的思考 总被引:2,自引:0,他引:2
21世纪初是世界经济发展的重大战略机遇期,如何抓住机遇加快发展,是中国钢铁行业应认真思考的问题。十一五我国钢铁工业的发展,靠什么来拉动,还能靠大规模的投资吗?目前我们还不能生产的双高产品怎么办,靠花钱能买来技术吗?靠市场能换来核心产品吗?值得深思。当今,我们思考的不仅应考虑个别企业的生存问题,而更应考虑的是钢铁行业整体的长远发展问题,即 相似文献
60.
Chun-Yuan Chen Shiou-Ying Cheng Wen-Hui Chiou Hung-Ming Chuang Wen-Chau Liu 《Electron Device Letters, IEEE》2003,24(3):126-128
A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications. 相似文献