Eigenstructure assignment by decentralized output feedback-acomplete parametric approach

The problem of eigenstructure assignment in multivariable linear systems by decentralized output feedback is considered. By using a complete parametric solution of a generalized Sylvester matrix equation, parametric representations of both the left and right closed-loop eigenvectors and generalized eigenvectors as well as the feedback gains with respect to the closed-loop eigenvalues and two series of partially free parameter vectors are established. The obtained result does not require any conditions on the closed-loop eigenvalues, and generalizes some previous results in this area. An example shows the effect of the proposed approach     

先进电子化政府基本模式及实现

电子化政府是运用信息技术创新政府服务的整合概念。建构电子政府已经成为世界范围内政府再造的新趋势。这里讨论了电子化政府基本模式及规划的内容和特点,并具体提出实现的模式、技术路径及方法。     

B－ISDN中的拥塞控制技术

Ｂ－ＩＳＤＮ是现代电信网的发展方向，拥塞控制技术则是其中的一个重要问题。由于Ｂ－ＩＳＤＮ采用新的信息传递方式──ＡＴＭ，使传统的拥塞控制方法不再适用。本文依据ＩＴＵ－Ｔ有关建议的最新内容对Ｂ－ＩＳＤＮ拥塞控制的基本思想、工作机制以及其中的主要功能作了较为详细的分析讨论，并提出了一些Ｂ－ＩＳＤＮ拥塞控制技术中尚需进一步研究的问题。     

分散剂FDN对G级油井水泥作用机理探讨

采用液相电导法和酸度法研究了分散剂FDN对G级油井水泥水化速度的影响。发现FDN促进水泥的早期水化,但吸附-络合作用及磺酸根离子对Ca(OH)_2核晶过程的“毒化”作用使后期水化速度减慢。本研究证实ζ电位升高是FDN广生分散作用的主要因素。当FDN的吸附达饱和时,ζ电位达最大值,水泥浆的分散程度最大。     

锥形有源条半导体光放大器增益和饱和特性分析

以行波半导体光放大器速度方程为基础，采用传输矩阵方法，对锥形结构半导体光放大器的增益和饱和特性进行理论研究。讨论了不同锥形长度，不同结构时的增益和饱和特性差异。理论研究表明，锥形结构能改善半导体光放大器的偏振灵敏度。在同一锥度下，长锥形长度能提高饱和增益，降低偏振度。在进行半导体光放大器有源条结构设计时要综合考虑锥度及锥形长度的影响，以实现结构优化 。     

催化裂化烟气转硫脱氮和助燃三功能催化剂FP-DSN的工业应用

烟气转硫、脱氮和助燃三功能新型催化剂FP DSN在中国石油天然气股份有限公司锦西石化分公司 1.4Mt/a重油催化裂化装置的工业应用表明 ,此种以La ,Ce ,Sr和Co等元素的氧化物或复合物为活性组分的催化剂 ,在其用量为催化裂化催化剂总藏量的 1%～ 2 %的情况下 ,有较强的脱除烟气中SOx 和NOx 的能力 ,大大减轻了烟气对反应器壁的腐蚀 ,减少了污染气体的排放 ,同时有CO助燃效果 ,装置可不使用其他专门的助燃剂。应用试验时 ,再生器烟气中SOx 的平均脱除率达 72 .85 %,NOx 的平均脱除率达 85 .90 %。该催化剂的使用对催化裂化产品的分布和质量无明显影响。该剂的应用为装置带来了可观的经济效益。     

浅谈实验室检验在科研生产中的作用

文章阐述了实验窀检验在科研生产中的作用及发挥作用的巨大潜力。     

HfOxNy的场发射特性

用直流溅射和高温退火相结合的方法制备了HfOxNy薄膜并测试了其场发射性能,发现其具有较低的开启电场、较大的发射电流密度以及很好的发射稳定性.高压"锻炼"对提高HfOxNy场发射性能起着关键作用,这与高压"锻炼"下薄膜内部结构和表面性质的改变有关.对场发射机理的研究表明,HfOxNy的场发射符合经典的FN隧穿理论.     

Development of a heterogeneous microstructurally based finite element model for the prediction of forming limit diagram for sheet material

A heterogeneous finite element model with randomly distributed inhomogeneities has been developed for the determination of the forming limit diagram (FLD) for thin aluminum sheet material based on the prediction of localized necking. The strength difference between the inhomogeneities and the matrix is ascertained either from the fluctuation of the experimental stress-strain curve or from a micromechanical analysis that uses a representative particle field. By changing the specimen geometry and friction conditions, different stress states (or strain paths) are achieved. A plot of the critical Oyane fracture parameter is used to identify the limit strain state. Also, a plot of equivalent plastic strain rate is used to distinguish the boundary of intense shear bands and hence to identify where to take the measurement point. Both a plane stress model and a three-dimensional (3-D) model are adopted to predict the shear banding phenomenon and hence the FLD. The predicted FLD agrees well with the measurements from a recent round robin experimental FLD involving several independent research laboratories. The Taguchi method is applied to assess how the various parameters involved in the heterogeneous model affect the calculated forming limit strain.     

A 5 mW and 5% efficiency 210 GHz InP-based heterostructure barrier varactor quintupler

This letter reviews the design, construction, and measurement of a 210 GHz heterostructure barrier varactor frequency quintupler. The quintupler utilizes planar heterostructure barrier varactors (HBVs) based on the InGaAs/InAlAs/AlAs material system and has produced a measured output power of 5.2 mW with 5.2% conversion efficiency at 210 GHz. This performance is comparable to the state-of-the-art results reported in the literature for HBV frequency triplers operating at millimeter and submillimeter wavelengths.