稀土混合物水溶液中囊泡的形成

依据柠檬酸的螯合作用和乙二醇的空间位阻效应，获得了稀土混合物囊泡。并利用ＩＣＰ、ＴＥＭ、ＦＳ等仪器对囊泡的性能进行了研究，最后对囊泡的形成机理进行了讨论。     

步进式加热炉炉温优化设定模型及软件开发

针对线材厂步进式加热炉实际工况，提出了基于经验规则的炉温优化设定模型和在线自学习获取知识的思想，并以炉温优化设定模型为核心，开发出加热炉计算机控制系统的优化运行软件。     

Robot Pose Estimation in Unknown Environments by Matching 2D Range Scans

A mobile robot exploring an unknown environment has no absolute frame of reference for its position, other than features it detects through its sensors. Using distinguishable landmarks is one possible approach, but it requires solving the object recognition problem. In particular, when the robot uses two-dimensional laser range scans for localization, it is difficult to accurately detect and localize landmarks in the environment (such as corners and occlusions) from the range scans.In this paper, we develop two new iterative algorithms to register a range scan to a previous scan so as to compute relative robot positions in an unknown environment, that avoid the above problems. The first algorithm is based on matching data points with tangent directions in two scans and minimizing a distance function in order to solve the displacement between the scans. The second algorithm establishes correspondences between points in the two scans and then solves the point-to-point least-squares problem to compute the relative pose of the two scans. Our methods work in curved environments and can handle partial occlusions by rejecting outliers.     

二元光栅照明研究

采用部分相干成象理论对二元光机照明进行了较为详细的研究。分析了二元光栅照明对分辨力，焦，照明能量和照明均匀性的影响，并通过实验研究验证了二元光栅对分辨力和焦深有较大程度的提高，同时能量损失不大。     

含氨烷基聚硅氧烷的研究进展

对含氨烷基聚硅氧烷的研究进行综述，着重介绍含氨烷基聚硅氧烷的种类，性能特点，制备方法及应用等。     

表面稳定模式铁电液晶的电光特性测试

采用一种改进的高分子膜摩擦定向法成功地实现了表面稳定模式铁电液晶的光学双稳态，对比度大于１４０，响应时间达１００微秒。     

利用垂直阵列构作Cartesian认证码

利用垂直阵列构作了一类Cartesian认证码,计算了它们的参数,并且在编码规则按等概率分布选取时,成功的模仿攻击和成功的替换攻击概率也被算出。     

聚电解质溶液分子热力学模型

<正>链状聚电解质由于是长链大分子又有很高的电荷密度,其溶液即使在极低的浓度下仍具有很强的负偏差,与Debye-Huckel理论预测的结果相去甚远。工程上使用的Manning模型认为聚离子的电荷密度有一临界值,当超过临界值时,反离子即凝聚在聚离子表面使其实际电荷密度降至临界值。Nagvekar等在该模型的基础上引入NRTL方程,以计及短程相互作用的贡献。Manning等的方法虽然有一定的物理意义,但临界值的确定缺乏可靠的根据。     

Temperature dependence study of two-dimensional electron gas effecton the noise performance of high frequency field effect transistors

We present experimental evidence that the noise figure (NF) and associated gain equal to those achieved with GaAs pseudomorphic high electron mobility transistors (GaAs p-HEMT's) can also be accomplished by ion implanted GaAs metal-semiconductor field-effect transistors (GaAs MESFET's). These measured noise figure results as a function of low temperature for GaAs MESFET's and p-HEMT's clearly suggest that the transport properties of the two-dimensional electron gas in HEMT's and p-HEMT's do not make a significant contribution to the noise reduction at high frequency operation of these devices