Plasma-induced charging damage in ultrathin (3-nm) gate oxides

Plasma-induced damage in various 3-nm-thick gate oxides (i.e., pure oxides and N₂O-nitrided oxides) was investigated by subjecting both nMOS and pMOS antenna devices to a photoresist ashing step after metal pad definition. Both charge-to-breakdown and gate leakage current measurements indicated that large leakage current occurs at the wafer center as well as the wafer edge for pMOS devices, while only at the wafer center for nMOS devices. These interesting observations could be explained by the strong polarity dependence of ultra thin oxides in charge-to-breakdown measurements of nMOS devices. In addition, pMOS devices were found to be more susceptible to charging damage, which can be attributed to the intrinsic polarity dependence in tunneling current between nand p-MOSFETs. More importantly, our experimental results demonstrated that stress-induced leakage current (SILC) caused by plasma damage can be significantly suppressed in N₂O-nitrided oxides, compared to pure oxides, especially for pMOS devices. Finally, nitrided oxides were also found to be more robust when subjected to high temperature stressing. Therefore, nitrided oxides appear to be very promising for reducing plasma charging damage in future ULSI technologies employing ultrathin gate oxides     

InCl分子B3П1态时间分辨谱研究

采用激光诱导荧光技术对InCl分子B3П1→X1∑+荧光光谱进行了分析和归属,并对 B3П1(v′=0)→X1∑+(v″=0)的时间分辨谱进行了观测．首次得到InCl分子B3П1态(v′= 0)无碰撞辐射寿命т0≈353 ns,无辐射弛豫速率常数kQ≈1．985×10-10cm3molec-1s-1及 电子跃迁矩｜Re｜2=0．40D2．     

Laser Diode Pumping High-stability 1047 nm TEM00 Mode CW Nd:YLiF4 Laser

A laser diode (LD) pumping high-stability 1047 nm TEM00 mode Nd: YLiF4 (Nd: YLF) continuous wave (CW) laser is reported in this letter. The laser output power of 5.83 W with optical to optical effidency of 27％ and slope efficiency of 30％ has been achieved The instability of output power is 0.36％ and spike caused by relaxation oscillation has not been observed in the laser beam. The transverse cross section of laser beam is an ellipse, the diameters of laser beam at output mirror in both directions are 0.97 mm and 1.07 mm, respectively. The divergent angles are 0. 936 mrad and 0. 774 mrad, and the values of M2 are 1.37 and 1.24, respectively. The polarization degree of laser beam is better than 237:1.     

通过数据处理实现微细台阶面的测量

分析了微细台阶面表面形貌测量可能会出现平滑或失真现象的根源 ,提出一种基于测量数据分析和数据处理的解决方法。此方法已成功地应用于自行研制的衍射光学元件三维表面形貌测量系统中。     

VAD技术在3830多普勒天气雷达中的应用

介绍了VAD技术的基本原理以及VAD技术在3830多普勒天气雷达中的具体应用,并对利用此技术得到的实际结果进行理论分析和讨论。     

基于PLZT开关的全光纤单模调Q掺Yb3+光纤激光器

PLZT电光陶瓷具有良好的透明性、高电光系数等特性,用来实现全光纤调Q开关具有很大的优势.分析了PLZT全光纤调Q开关的原理,测量了调Q开关的时间波形,研究了基于PLZT开关的全光纤单模环形调Q掺Yb3 光纤激光器.抽运光功率为180 mW,莆复频率为1 kHz时,得到峰值功率25.6 W,脉冲宽度80 ns,光谱宽度1 nm,脉冲能量2.0 μJ的调Q脉冲.此外,分别研究了抽运功率和重复频率对脉冲峰值功率和脉冲宽度的影响,结果表明,同一重复频率情形下,随着抽运功率的升高,峰值功率增大,脉冲宽度降低;同一抽运功率水平下,随着重复频率的增大,脉冲的峰值功率减小,脉冲宽度增大.     

一种用于MIMO-OFDMA系统的调度和资源分配算法

该文提出了一种用于MIMO-OFDMA 系统下行链路的调度和资源分配算法,该方法能够优化利用空时频三维资源,为不同类业务提供QoS保证。该算法不仅结合了先进的物理层技术,同时从媒体接入控制(MAC)层考虑了业务特性、QoS 需求以及用户公平性等因素对资源进行分配。仿真结果表明,该算法在保证多业务传输质量的同时提高系统吞吐量。     

数据链路层拓扑发现算法的研究

随着大规模交换网络的发展,网络拓扑发现的研究由网络层拓展到数据链路层.链路层的拓扑发现能够发现网络层拓扑发现无法发现的局域网内部的详细的物理连接情况.通过对数据链路层现状和存在的不足的研究,提出了一种基于STP树的数据链路层拓扑发现算法,该算法不要求各个网桥FDB表的信息是完备的,就能快速准确地计算出网络第二层的拓扑结构.     

基于服务质量实现多播技术策略的研究

互连网络为数据、音频和视频等应用提供不同的实现服务质量(QoS)的策略,如集成服务模型IntServ、差分服务模型DiffServ和多标签交换协议MPLS等。随着多播应用的出现,上述技术不能有效地为多播提供端到端的服务质量。分析上面各种技术在多播应用中的不足,并给出了不同文献提出的解决方案,同时也分析了异构网络实现满足服务质量的多播策略和遇到的问题。最后指出了实现多播服务质量要解决的问题。     

压电陶瓷光纤相位调制控制系统的研制

压电陶瓷光纤相位调制器是光纤傅里叶变换光谱测量系统中的核心器件之一,压电陶瓷驱动控制系统的输出电压特性决定了压电陶瓷光纤相位调制器的多种性能,如线性、分辨率、动态特性等,从而对光纤傅里叶变换光谱测量系统的光谱分辨率、测量速度和系统噪声等重要指标产生影响.应用复杂可编程逻辑器件(CPLD)、复合高压运放和单片机等先进电子技术设计压电陶瓷光纤相位调制控制系统.实验表明,该系统加载压电陶瓷容性负载后,在设定的频率范围内显示出了较好的动态特性与线形度,能很好地满足光纤相位调制技术对压电陶瓷工作电压波形的要求.