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61.
本文分析了现有数宇监控系统中的云台控制法,该方法基于派尔高协议通过串口间接控制云台:提出了基于智能监控系统的嵌入式IO直控云台结构,并结合S3C2440处理器设计了硬件结构、编写了嵌入式LinuX操作系统下的驱动程序。 相似文献
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对硅npn双极晶体管(C2060)室温下不同集电极偏置电流条件下γ辐照的总剂量效应进行了研究.结果表明,npn晶体管的辐照损伤程度随着辐照总剂量的增加而增加;尤其是实验中发现:在相同的辐照总剂量下随着辐照时集电极偏置电流的增加,晶体管的辐照损伤程度却在减轻.空间电荷模型的观点并不能很好地解释辐照损伤与辐照集电极偏置电流的关系.文章对空间电荷模型进行了修正,认为除氧化物俘获电荷和界面俘获电荷外,还会在外基区Si-SiO2界面附近形成电中性的电偶极子.利用修正后的理论可以很好地解释所有的实验结果. 相似文献
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Shu Gong Lim Wei Yap Yi Zhu Bowen Zhu Yan Wang Yunzhi Ling Yunmeng Zhao Tiance An Yuerui Lu Wenlong Cheng 《Advanced functional materials》2020,30(25)
An artificial basilar membrane (ABM) is an acoustic transducer that mimics the mechanical frequency selectivity of the real basilar membrane, which has the potential to revolutionize current cochlear implant technology. While such ABMs can be potentially realized using piezoelectric, triboelectric, and capacitive transduction methods, it remains notoriously difficult to achieve resistive ABM due to the poor frequency discrimination of resistive‐type materials. Here, a point crack technology on noncracking vertically aligned gold nanowire (V‐AuNW) films is reported, which allows for designing soft acoustic sensors with electric signals in good agreement with vibrometer output—a capability not achieved with corresponding bulk cracking system. The strategy can lead to soft microphones for music recognition comparable to the conventional microphone. Moreover, a soft resistive ABM is demonstrated by integrating eight nanowire‐based sensor strips on a soft trapezoid frame. The wearable ABM exhibits high‐frequency selectivity in the range of 319–1951 Hz and high sensitivity of 0.48–4.26 Pa?1. The simple yet efficient fabrication in conjunction with programmable crack design indicates the promise of the methodology for a wide range of applications in future wearable voice recognition devices, cochlea implants, and human–machine interfaces. 相似文献
66.
Kong Chao Ou Weihua Gong Xiaofeng Li Weian Han Jie Yao Yi Xiong Jiahao 《中国邮电高校学报(英文版)》2022,29(6):73-82
Face anti-spoofing is used to assist face recognition system to judge whether the detected face is real face or fake face. In the traditional face anti-spoofing methods, features extracted by hand are used to describe the difference between living face and fraudulent face. But these handmade features do not apply to different variations in an unconstrained environment. The convolutional neural network (CNN) for face deceptions achieves considerable results. However, most existing neural network-based methods simply use neural networks to extract single-scale features from single-modal data, while ignoring multi-scale and multi-modal information. To address this problem, a novel face anti-spoofing method based on multi-modal and multi-scale features fusion ( MMFF) is proposed. Specifically, first residual network ( Resnet )-34 is adopted to extract features of different scales from each modality, then these features of different scales are fused by feature pyramid network (FPN), finally squeeze-and-excitation fusion ( SEF) module and self-attention network ( SAN) are combined to fuse features from different modalities for classification. Experiments on the CASIA-SURF dataset show that the new method based on MMFF achieves better performance compared with most existing methods. 相似文献
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激光器调Q技术是产生高峰值功率、窄脉冲的最有效方法之一。提出并初步验证了全光纤对接损耗调Q方法,分析了调Q原理以及影响因素,实现调Q脉冲的输出。激光腔内加入两段光纤,两段光纤间相互靠近的一端紧密对接,其中一段粘结在压电陶瓷(PZT)上。通过外部电压变化驱动压电陶瓷,使两光纤端面间出现轴向间隙、径向错位或旋转夹角,改变两段光纤之间的耦合连接损耗,进而调节激光腔的损耗,输出调Q脉冲。采用径向错位方式,可以有效改变光纤之间的耦合连接损耗,重复频率可达10 kHz。该方法实现简单,成本低廉,通过外部条件控制,可进一步提高输出脉冲的稳定性。 相似文献
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The effects of different NH3-plasma treatment procedures on interracial and electrical properties of Ge MOS capacitors with stacked gate dielectric of HfTiON/TaON were investigated.The NH3-plasma treatment was performed at different steps during fabrication of the stacked gate dielectric,i.e.before or after interlayer (TaON)deposition,or after deposition ofhigh-k dielectric (HfTiON).It was found that the excellent interface quality with an interface-state density of 4.79 × 1011 eV-1cm-2 and low gate leakage current (3.43 × 10-5 A/cm2 at Vg =1 V) could be achieved for the sample with NH3-plasma treatment directly on the Ge surface before TaON deposition.The involved mechanisms are attributed to the fact that the NH3-plasma can directly react with the Ge surface to form more Ge-N bonds,i.e.more GeOxNy,which effectively blocks the inter-diffusion of elements and suppresses the formation of unstable GeOx interfacial layer,and also passivates oxygen vacancies and dangling bonds near/at the interface due to more N incorporation and decomposed H atoms from the NH3-plasma. 相似文献
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