油田放射性作业人员外周血淋巴细胞染色体畸变的观察

本文调查了油田212例受γ射线和中子混合辐射照射的作业人员和30例正常人的外周血淋巴细胞染色体畸变。作业人员受γ射线照射的人均年受照剂量为1.28mGy。调查结果表明,放射性测井人员与正常人相比染色体畸变率有显著差异。     

STUDY ON RESIDUES OF ~（14）C－FENITROTHION IN MODEL RICE－FISH ECOSYSTEM AND FIELD RICE－FISH ECOSYSTEM

ＳＴＵＤＹＯＮＲＥＳＩＤＵＥＳＯＦ~（１４）Ｃ－ＦＥＮＩＴＲＯＴＨＩＯＮＩＮＭＯＤＥＬＲＩＣＥ－ＦＩＳＨＥＣＯＳＹＳＴＥＭＡＮＤＦＩＥＬＤＲＩＣＥ－ＦＩＳＨＥＣＯＳＹＳＴＥＭＺｈａｎｇＺｈｏｎｇｌｉａｎｇ（张仲良）；ＷａｎｇＨｕａｘｉｎ（王化新）；Ｇ?..     

X射线聚束透镜原理及其应用

本文阐述了一种新型的Ｘ射线聚束装置─—Ｘ射线透镜的聚束原理。给出了透镜的基本设计方法，并对它应用于Ｘ射线光刻研究领域的前景作了展望。     

用于重离子核反应实验测量的纵向电场气体电离室

本文报道了一种新型的大动态范围，多叠层探测器系统组件之一的纵向电场气体电离室的构造，性能和在中能得离子核反应实验中的应用。     

A Petri net based approach to modeling and scheduling for an FMSand a case study

In this paper, a timed-place Petri net (TPPN) model for flexible manufacturing systems (FMSs) is constructed, which contains two major submodels: the stationary transportation model; and the variable process flow model. For multiple automated guided vehicle (AGV) systems, the authors embed a simple rule and introduce a push-AGV strategy in a TPPN model to solve the collision and traffic jam problems of such vehicles. Since a firing sequence of the TPPN from the initial marking to the final marking can be seen as a schedule of the modeled FMS, by using an A^* based search algorithm, namely, the limited-expansion A algorithm, an effective schedule of the part processing can be obtained. To show the promising potential of the proposed work, a prototype FMS is used as a target system for implementation. The experiment results assert that the job-shop scheduling problem can always be satisfactorily solved     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature.     

Fuzzy consecutive-k-out-of-n:F system reliability

In this paper, we propose a new method to analyze fuzzy consecutive-k-out-of-n:F system reliability using fuzzy GERT. The triangular fuzzy numbers are used to fuzzify probabilities of the consecutive-k-out-of-n:F system and the interval arithmetic, α-cuts and an index of optimism λ are applied to compute fuzzy consecutive-k-out-of-n:F system reliability on fuzzy the GERT network. Futhermore, we can obtain all computation results by “MATHEMATICA” package.