Magnetic field and temperature dependence of the groundstate energy of weak-coupling magnetopolaron in quantum rods with hydrogenic impurity

The dependence of the ground-state properties of weak-coupling bound magnetopolarons in quantum rods (QRs) with hydrogenic impurity on magnetic field and temperature is studied by means of the Lee-Low-Pines (LLP) transformation method and Huybrechts linear combination operator method. The expression for the ground-state energy of the magnetopolaron is derived. Results of the numerical calculations show that the ground-state energy of weak-coupling bound magnetopolarons in QRs with hydrogenic impurity increases with increasing the cyclotron frequency of the magnetic field, the confinement strength of QRs and the temperature, but decreases with increasing the electron-phonon coupling strength and the dielectric constant ratio. The stability of the ground state of magnetopolarons is closely related to the aspect ratio e′of the QR. The ground state of magnetopolarons is the most stable at e′=1. The stability of the ground state of magnetopolarons can remarkably decrease when the value of the aspect ratio increases or decreases from 1.     

基于喇曼-奈斯衍射的MOEMS加速度计的设计与工艺实验

本文主要设计了一种新型的基于喇曼奈斯声光衍射的微光机电加速度计。它主要由一个声光移频器与一系列光波导构成。文章首先对器件的基础理论与基本原理做了简要的介绍。然后设计了一种基于弯曲板波的延迟线振荡器做为声光移频器,其克莱因-考克参数为0.38。设计了厚度2微米,宽度0.6微米的单模光波导用于光的传输,同时还设计了波导偏振器以保证波导内的光具有相同的偏振方向。接着,基于前文的设计,文中提出了基于硅工艺的器件加工方案与流程,并详细讨论了加工流程中存在的难点与问题。最后针对提出的难点与问题进行了一系列的工艺实验,找到了解决难点和问题并复合设计要求的工艺条件与参数,实验结果表面本文提出的器件的设计与加工是可靠可行的。     

激光修复热影响区深度对TC17-TC11双合金拉伸性能的影响

以TC17合金锻件为基材,采用激光修复工艺方法,在其上沉积TC11合金粉末,制备TC17-TC11双合金修复试样,在双合金界面处靠近TC17锻件基体一侧观察到一定深度的热影响区。通过调整激光修复工艺参数(激光功率、扫描速度、送粉率),构造不同深度的热影响区,探讨热影响区深度对激光修复试样高温拉伸性能的影响。研究结果表明,高温拉伸时,修复试样表现为滑移分离型断裂,由于α/β两相的应变不协调,拉伸时裂纹萌生于TC11合金α/β相界面,其中热影响区深度为5 mm修复试样的强度和塑性匹配度好。随着热影响区深度的增加,修复试样的强度值呈现先升后降的趋势,热影响区深度为2 mm修复试样的抗拉强度最大,但其塑性较差。     

基于分布反馈注入锁定的连续可调光子微波倍频实验研究

提出了一种基于注入锁定分布反馈式(DFB)激光器的双波长差频微波/毫米波信号产生方案。方案利用正弦波光信号通过半导体光放大器(SOA)进行非线性展宽,产生高阶分量,然后注入到两个DFB激光器后进行锁定放大,产生频率连续可调的倍频信号。在实验中,注入的正弦波光信号频率为1.25GHz,得到20～40GHz频率范围内1.25GHz的任意自然数倍的连续可调微波信号,其最高倍频数为32。     

Li+增强Ho3+/Yb3+:Y2O3纳米晶的上转化发光研究

采用凝胶溶胶法制备了不同浓度的Y2O3:Ho3+/Yb3+/Li+纳米晶,并且系统研究了不同掺杂浓度对上转化荧光现象的影响。首先,通过XRD图形判断了晶体结构的生成,再通过980 nm的激光器和荧光光谱仪测得的光谱图,发现了位于520~579 nm的绿光、635~674 nm的红光等两条很强的可见光,还有一条较弱的位于743~775 nm的近红外发光。最后,通过与能级图比较和分析可以得出:它们分别是5F4/5S2→5I8,5F5→5I8和5F4/5S2→5I7荧光跃迁。可以看出:在掺杂入Li+之后,上转化荧光得到了极大增强。     

利用基带直调信号注入锁定半导体激光器产生全光上变频信号的研究

提出了一种将低速基带信号直调产生的宽谱信号,注入至用于上变频的分布反馈式半导体激光器(DFB-LD),利用调制信号光谱中的高阶分量对从激光器进行相位锁定,从而产生光学上变频信号的方法。对直调信号注入锁定DFB-LD产生光学上变频信号的机理进行了理论分析,完成了2.5Gb/s伪随机码基带信号通过直调并注入从激光器,分别产生了30,35,40GHz副载波频率的全光上变频信号的实验,并在时域和频域上,对上变频信号的特征进行了研究。该方案结构简单,无需高速外调制器及高频本振,具有集成潜力,理论上可产生更高载频(如60GHz),对目前的光-无线混合接入提供了一种可行的解决方案。     

光纤激光轧辊毛化工艺参数研究

针对CO₂激光器和YAG激光器的种种不足,采用光纤激光毛化柔性工作站,对轧辊表面进行了不同尺寸和分布的毛化点彤貌加工。分析了光纤激光功率、脉冲频率、脉冲宽度、扫描速度、离焦量等工艺参数对毛化点形貌的影响。结果表明:通过合理匹配毛化工艺参数,能够得到精确可控的轧辊毛化形貌和满足生产要求的粗糙度,也可以实现相对无序的毛化点排列。     

射频溅射CoMnNiO非晶薄膜中空穴的迁移率

测量薄膜的热电动势,很容易确定薄膜中载流子的迁移率。本研究根据CoMnNiO非晶薄膜在200—350K温区的热电动势测量和直流电导,计算了薄膜中空穴的迁移率。结果表明,330K时,薄膜中空穴的迁移率为1.25cm~2v~(-1)(?)~(-1),且具有热激活性质。由此可以推断,射频溅射CoMnNiO非晶薄膜在常温下发生跳跃导电。     

国际上光纤通信技术发展的新趋势

光纤通信技术具有广阔的应用前景。为扩大光纤通信技术的应用领域,必将对光纤通信技术的发展提出一系列的新要求。本文拟从光纤、连接技术、光源和探测器、光电子集成、光调制器和转换器等五个方面来具体阐述国际上光纤通信技术发展的新趋势。     

Study on the failure temperature of Ti/Pt/Au and Pt5Si2-Ti/Pt/Au metallization systems

The Ti/Pt/Au metallization system has an advantage of resisting KOH or TMAH solution etching. To form a good ohmic contact, the Ti/Pt/Au metallization system must be alloyed at 400℃. However, the process temperatures of typical MEMS packaging technologies, such as anodic bonding, glass solder bonding and eutectic bonding, generally exceed 400℃. It is puzzling if the Ti/Pt/Au system is destroyed during the subsequent packaging process. In the present work, the resistance of doped polysilicon resistors contacted by the Ti/Pt/Au metallization system that have undergone different temperatures and time are measured. The experimental results show that the ohmic contacts will be destroyed if heated to 500℃. But if a 20 nm Pt film is sputtered on heavily doped polysilicon and alloyed at 700℃ before sputtering Ti/Pt/Au films, the Pt₅Si₂-Ti/Pt/Au metallization system has a higher service temperature of 500℃, which exceeds process temperatures of most typical MEMS packaging technologies.