Response of simulated propellant and explosives to projectile impact—II. Fragmentation

This paper is the second of a series concerned with the penetration and perforation phenomena in two types of propellant and explosive simulant, named Propergol, due to the impact at normal incidence of both blunt and conically-tipped steel strikers. The collision results in fragmentation, plug formation and generation of a cloud of debris that includes particles of measurable dimensions traveling with significant velocities. Both the fragment size and area as well as the ejecta mass are determined experimentally as a function of Propergol specimen thickness and impact velocity or energy. The cumulative number of fragments as a function of size for the Propergol is uniformly found to be a bi-linear semi-logarithmic relationship with the bifurcation occurring at the mean crystal radius. Individual crystals and the crater generated are examined by means of a scanning electron microscope.

A phenomenological model of the fragmentation process is constructed, based on an assumed spherical shape of the fragments and the bi-linear fragment distribution, using energy methods. This is combined with a perforation analysis that considers the process to be sequentially composed of initial indentation, fragmentation, and sliding and deflection of the Propergol disks. An evaluation of this model providing fragment volumes as a function of impact velocity is compared with experimental results and found to be in good agreement.     

艰难兴大业踏雪寻梅来——访香港著名企业家沈家燊

序：“为什么我的眼里常含泪水，因为我对这土地爱的深沉。”每次读到艾青的这句诗，我都攀不住在想诗人到底有着怎样的情节．而这情节又是怎棒化成澎湃的激情？当面对沈家柴先生那闪烁着光芒，自信、执着、激情四射的眼神时，我缝于找到了答案：正是对一个国家、一座城市拥有了不移信念、不倦热情、不衰挚爱，他才有了面对错综复杂矛盾时的坦荡胸怀，才会有了风雨兼程的无怨无悔。沈家集为这句诗做出了最生动的逄释，他以自己的方式在津洁大地上刻写着人生的价值，他将心和力奉献给了天津。     

A Shortcut Method for Estimating the HETP of Structured Packed Distillation Columns at Elevated Pressure

A shortcut model is developed for predicting the HETP of a structured packed distillation column operating at elevated pressure. The proposed model incorporates the geometrical parameters of the packing, physical properties of the vapor and liquid phases, and the hydrodynamics of the two‐phase flow. The proposed model is tested and validated by comparing the predicted results with the present experimental data and some published HETP data. The results show that the proposed model can predict the experimental data with a deviation smaller than 20 %.     

CFD Simulation of Liquid Film Flow on Inclined Plates

A two‐phase flow CFD model using the volume of fluid (VOF) method is presented for predicting the hydrodynamics of falling film flow on inclined plates, corresponding to the surface texture of structured packing. Using the proposed CFD model the influence of the solid surface microstructure, liquid properties and gas flow rate on the flow behavior was investigated. From the simulated results it was shown that under the condition of no gas flow the liquid flow patterns are dependent on the microstructure of the plates, and proper microstructuring of the solid surface will improve the formation of a continuous liquid film. It was also found that liquid properties, especially surface tension, play an important role in determining the thin‐film pattern. However, there are very different liquid film patterns under the action of gas flow. Thinner liquid films break easily, but thicker liquid films can remain continuous even at higher gas flow rates, which demonstrates that all factors affecting the liquid film thickness will affect the liquid film patterns under conditions of counter‐current two‐phase flow.     

飞行人员骨密度与内分泌调节关系的探讨

对37名骨密度(BD)低下的飞行员(实验组)和BD正常的48名飞行员、100名地面人员(正常对照组)进行了BD和血清TT_3、TT_4、TSH IRMA、CT、PTH、E_2和T放射免疫测定。结果显示,实验组BD均值明显低于对照组(p<0.01),血清TT_3、TT_4、CT、E_2(女性)和T(男性)均值与对照组比较,大多数年龄存在着显著或非常显著差异(p<0.05或p<0.01)。同时对飞行人员BD与几种内分泌激素关系进行了探讨。     

直接斜率波前复原算法的控制效果分析

建立自适应光学系统功率谱抑制函数的概念，分析了采用直接斜率波前复原算法的自适应当光学系统的控制效果，理论分析与６１单元自适应光学系统上的实验结果表明，直接斜率波前复原算法将导致控制效果下降。     

A comprehensive study of performance and reliability of P, As, andhybrid As/P nLDD junctions for deep-submicron CMOS logic technology

A comprehensive study of P, As, and hybrid As/P nLDD junctions is presented in terms of performance, reliability, and manufacturability for the first time. It is found that As junctions limit the performance of deep submicron devices due to unacceptable hot-carrier reliability, whereas a hybrid junction (light dose P added to medium dose As) dramatically improves hot-carrier reliability while maintaining high performance and manufacturability. For L_eff of 0.19 μm, using this hybrid junction in a manufacturing process, an inverter gate delay of 32 ps, dc hot carrier life time exceeding ten years, and off-state leakage below 30 pA/μm at 2.9 V have been achieved     

裂解C_5馏分综合利用的对策

探讨了裂解C_5馏分就近集中分离综合利用和分散直接利用,以及建设单独分离双环戊二烯装置发展下游精细化工产品的综合利用策略。     

Minimum entropy and information measure

Kapur et al. (1995) introduced the MinMax information measure, which is based on both maximum and minimum entropy. The major obstacle for using this measure, in practice, is the difficulty in finding the minimum entropy. An analytical expression has already been developed for calculating the minimum entropy when only variance is specified. An analytical formula is obtained for calculating the minimum entropy when only mean is specified, and numerical examples are given for illustration     

Anomalous variations of OFF-State leakage current in poly-Si TFTunder static stress

Studies the anomalous variations of the OFF-state leakage current (I_OFF) in n-channel poly-Si thin-film transistors (TFTs) under static stress. The dominant mechanisms for the anomalous I_OFF can be attributed to (1) I_OFF increases due to channel hot electrons trapping at the gate oxide/channel interface and silicon grain boundaries and (2) I_OFF decreases due to hot holes accumulated/trapped near the channel/bottom oxide interface near the source region. Under the stress of high drain bias, serious impact ionization effect will occur to generate hot electrons and hot holes near the drain region. Some of holes will be injected into the gate oxide due to the vertical field (~(V_Gstress V_Dstress)/T _OX) near the drain and the others will be migrated from drain to source along the channel due to lateral electric field (~V_Dstress/L_CH)