北京谱仪端盖簇射计数器工作气体的研究

为使北京谱仪端盖族射计数器更好地工作在自猝灭流光ＳＱＳ模式下，提高其能量分辨以及线性等指标，用Ａｒ，ＣＯ２，Ｌｓｏｂｕｔａｎｅ三元工作气体对探测器的工作性能进行了仔细研究，找出了一适合于主雇地数器的工作气体，此外，还研究了异丁的纯度对探测器性能的影响。     

Effects of e-enforcement in the Netherlands

E-enforcement, or electronic enforcement, is the use of electronic tools in law enforcement. We shall distinguish between the first and second generations of e-enforcement. The first generation of e-enforcement tools provided means of "automated enforcement". This article is based on our research into the effects of two forms of second generation e-enforcement: the digital tachograph and 'Weigh in Motion' (WIM). The digital tachograph replaces the analog tachograph in all heavy goods vehicles within the European Union. The equipment registers drivers' driving and rest times. Weigh in Motion with Video (WIM-Vid) is a system involving sensors in the road and cameras, which detect and register overloading of heavy goods vehicles. The WIM-Vid system was developed and implemented in the Netherlands and is currently attracting international attention. We compare the situation prior to the introduction of these e-enforcement measures to the situation after the introduction of e-enforcement.     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

The application of semantic classification trees to naturallanguage understanding

This article describes a new method for building a natural language understanding (NLU) system, in which the system's rules are learnt automatically from training data. The method has been applied to design of a speech understanding (SU) system. Designers of such systems rely increasingly on robust matchers to perform the task of extracting meaning from one or several word sequence hypotheses generated by a speech recognizer. We describe a new data structure, the semantic classification tree (SCT), that learns semantic rules from training data and can be a building block for robust matchers for NLU tasks. By reducing the need for handcoding and debugging a large number of rules, this approach facilitates rapid construction of an NLU system. In the case of an SU system, the rules learned by an SCT are highly resistant to errors by the speaker or by the speech recognizer because they depend on a small number of words in each utterance. Our work shows that semantic rules can be learned automatically from training data, yielding successful NLU for a realistic application     

A multi-purpose CMOS sensor interface for low-power applications

A dedicated low-power CMOS transponder microchip is presented as part of a novel telemetry implant for biomedical applications. This mixed analog-digital circuit contains an identification code and collects information on physiological parameters, i.e., body temperature and physical activity, and on the status of the battery. To minimize the amount of data to be transmitted, a dedicated signal processing algorithm is embedded within its circuitry. All telemetry functions (encoding, modulation, generation of the carrier) are implemented on the integrated circuit. Emphasis is on a high degree of flexibility towards sensor inputs and internal data management, extreme miniaturization, and low-power consumption to allow a long implantation lifetime     

秦山核电厂蒸汽发生器水位控制试验

简要介绍了蒸汽发生器水位控制系统的运行方式和试验方法。试验项目包括旁通阀控制试验、主给水阀控制试验和旁通阀与主给水阀的切换试验。文中给出了试验结果,即在液位扰动和核动率扰动时,蒸汽发生器液位的变化过程。经过两个月的运行和瞬态试验,证明蒸汽发生器水位控制系统满足设计要求。     

Flammability and thermal stability studies of ABS/Montmorillonite nanocomposite

Acrylonitrile–butadiene–styrene (ABS)/montmorillonite nanocomposites have been prepared using a direct melt intercalation technique by blending ABS and organophilic clay of two different particle sizes: OMTa (5 µm) and OMTb (38 µm). Their structure and flammability properties were characterized by X‐ray diffraction, high resolution electronic microscopy (HREM), thermogravimetric analysis (TGA) and cone calorimeter experiments. The results of HREM showed that ABS/5 wt% OMTa nanocomposite was a kind of intercalated–delaminated structure, while ABS/5 wt% OMTb nanocomposite was mainly an intercalated structure. The nanocomposites showed a lower heat release rate peak and higher thermal stability than the original ABS by TGA and cone calorimeter experiments. Also, the intercalated nanocomposite was more effective than an exfoliated–intercalated nanocomposite in fire retardancy. Copyright © 2003 Society of Chemical Industry     

New insights into the relation between channel hot carrier degradation and oxide breakdown short channel nMOSFETs

In this letter, we report new findings in the relation between channel hot-carrier (CHC) degradation and gate-oxide breakdown (BD) in short-channel nMOSFETS biased at V/sub G/>V/sub D/. We observe that the time-to-BD is strongly reduced in the hot carrier regime and that although the channel hot-electron injection into the oxide occurs mainly at the drain side, stress-induced leakage current (SILC) generation and oxide BD always occur at the source side. The results of these measurements indicate that not solely the energy of the injected electrons but also the oxide electric field is determinant in the oxide BD process.