流动微量量热法研究阴离子表面活性剂在油砂表面的吸附

用流动微量量热法研究了十二烷基硫酸钠(SDDS)和十二碳羧酸钠(SL)在克拉玛依油田九区和乌尔禾区油砂上的吸附,简要地计论了吸附机理。所得实验结果表明,SL 在油砂上的吸附强度比 SDDS 的要大,在相当低的浓度下即可迟到饱和吸附。     

Observation of atomic steps on CaCO3 crystal surface

By using scanning polarization force microscopy,the deliquescence process and the atomic steps on the cleavage surface of CaCO3 in air were studied in situ.Under an exposure to medium umidity(-57%),the sloiw step movement has been observed.     

语音时域分割研究

在语音时域挑选剩余可懂度低的可用置换集合,置换集合是语音TDS系统中不可缺少的重要环节,本文给出了可用置换选取的条件、客观评价标准和方法。     

稀土Si_3N_4陶瓷材料中铝的络合滴定法测定

提出了强碱介质沉淀钇及有关杂质元素而与铝进行分离的方法。试液酸化后采用ＮａＦ析出法络合滴定测定铝。     

The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise

The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process     

Transient behavior of subthreshold characteristics of fullydepleted SOI MOSFETs

It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFETs show a transient behavior under certain front-gate and back-gate voltage conditions. The cause of this anomaly is explained, and applications for the phenomenon are pointed out. Particularly, a simple way to measure the silicon film thickness is suggested     

All-optical photonic switches using integrated inverted asymmetricFabry-Perot modulators and heterojunction phototransistors

InGaAs/GaAs(100) multiple-quantum-well-based inverted cavity asymmetric Fabry-Perot modulators are vertically integrated with GaAs/AlGaAs heterojunction phototransistors to yield all-optical photonic switches. The photonic switches using `normally on' modulator pixels exhibit an output on-off ratio of 12:1 with internal optical gain of 4 dB. The photonic switches using `normally off' modulator pixels yield similar contrast and gain, but exhibit intrinsic bistable behavior. The inverted cavity modulators employed permit utilizing the transparency of the GaAs substrate at the operating wavelength and offer advantages for fabricating large arrays for optical signal processing