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81.
钒冶炼焙烧添加剂选择研究 总被引:1,自引:0,他引:1
对小型钒冶炼厂焙烧工艺所用添加剂进行改进的可能性进行了探讨,研究了几种常用添加剂的焙烧条件,分析比较了其性能,提出用NaCl-Na2CO3作焙烧添加剂替代NaCl可大幅度减少大气污染,提高冶钒转化率;且不改变工艺流程,无需设备投资,具有较好的经济效益和环境效益。 相似文献
82.
Analysis and characterization of traveling-wave electrode in electroabsorption modulator for radio-on-fiber application 总被引:1,自引:0,他引:1
Jiyoun Lim Young-Shik Kang Kwang-Seong Choi Jong-Hyun Lee Sung-Bock Kim Jeha Kim 《Lightwave Technology, Journal of》2003,21(12):3004-3010
Comparing with a lumped electroabsorption modulator (EAM), we show the merits of a long EAM with traveling-wave electrode with high radio-frequency (RF) gain that could be used in high-frequency analog application. By terminating the RF output port with the characteristic impedance of 30 /spl Omega/, the device exhibited a large enhancement of 6 dB above 10 GHz in the electrical-to-optical response and a wide fractional bandwidth as estimated from simulation. In addition, an input impedance matching circuit of stub embedded on the device chip was found to be very effective for improving RF characteristics in the narrow band of frequency. 相似文献
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Sang‐Heung Lee Seung‐Yun Lee Hyun‐Cheol Bae Ja‐Yol Lee Sang‐Hoon Kim Bo Woo Kim Jin‐Yeong Kang 《ETRI Journal》2005,27(5):569-578
The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz. 相似文献
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The notion of pseudorandomness is the theoretical foundation on which to consider the soundness of a basic structure used in some block ciphers. We examine the pseudorandomness of the block cipher KASUMI, which will be used in the next‐generation cellular phones. First, we prove that the four‐round unbalanced MISTY‐type transformation is pseudorandom in order to illustrate the pseudorandomness of the inside round function FI of KASUMI under an adaptive distinguisher model. Second, we show that the three‐round KASUMI‐like structure is not pseudorandom but the four‐round KASUMI‐like structure is pseudorandom under a non‐adaptive distinguisher model. 相似文献
89.
T.‐S. Kang B.S. Harrison M. Bouguettaya T.J. Foley J.M. Boncella K.S. Schanze J.R. Reynolds 《Advanced functional materials》2003,13(3):205-210
Near‐infrared‐emitting electroluminescent (EL) devices using blue‐light‐emitting polymers blended with the Yb complexes Yb(DBM)3phen (DBM = dibenzoylmethane), Yb(DNM)3phen (DNM = dinaphthoylmethane), and Yb(TPP)L(OEt) (L(OEt) = [(C5H5)Co{P(O)Et2}3]–) have been studied. EL devices composed of Yb(DNM)3phen blended with PPP‐OR11 showed enhanced near‐IR output at 977 nm when compared to those fabricated with Yb(DBM)3phen/PPP‐OR11 blends. The maximum near‐IR external efficiencies of the devices with Yb(DBM)3phen and Yb(DNM)3phen are, respectively, 7 × 10–5 (at 6 V and at 0.81 mA mm–2) and 4 × 10–4 (at 7 V, and 0.74 mA mm–2). The optimal blend composition for EL device performance consisted of PPP‐OR11 blended with 10–20 mol‐% Yb(DNM)3phen. A device fabricated using Yb‐(TPP)L(OEt)/PPP‐OR11 showed significantly enhanced near‐IR output efficiency, and future efforts will focus on devices fabricated using porphyrin‐based materials. 相似文献
90.
Seong Hyuk Lee Junghee Lee Kwan-Gu Kang Joon Sik Lee 《Journal of Mechanical Science and Technology》2006,20(8):1292-1301
This article investigates numerically the carrier-phonon interactions in thin gallium arsenide (GaAs) film structures irradiated
by subpicosecond laser pulses to figure out the role of several recombination processes on the energy transport during laser
pulses and to examine the effects of laser fluences and pulses on non-equilibrium energy transfer characteristics in thin
film structures. The self-consistent hydrodynamic equations derived from the Boltzmann transport equations are established
for carriers and two different types of phonons, i.e., acoustic phonons and longitudinal optical (LO) phonons. From the results,
it is found that the two-peak structure of carrier temperatures depends mainly on the pulse durations, laser fluences, and
nonradiative recombination processes, two different phonons are in nonequilibrium state within such lagging times, and this
lagging effect can be neglected for longer pulses. Finally, at the initial stage of laser irradiation, SRH recombination rates
increases sufficiently because the abrupt increase in carrier number density no longer permits Auger recombination to be activated.
For thin GaAs film structures, it is thus seen that Auger recombination is negligible even at high temperature during laser
irradiation. 相似文献