钒冶炼焙烧添加剂选择研究

对小型钒冶炼厂焙烧工艺所用添加剂进行改进的可能性进行了探讨，研究了几种常用添加剂的焙烧条件，分析比较了其性能，提出用ＮａＣｌ－Ｎａ２ＣＯ３作焙烧添加剂替代ＮａＣｌ可大幅度减少大气污染，提高冶钒转化率；且不改变工艺流程，无需设备投资，具有较好的经济效益和环境效益。     

Analysis and characterization of traveling-wave electrode in electroabsorption modulator for radio-on-fiber application

Comparing with a lumped electroabsorption modulator (EAM), we show the merits of a long EAM with traveling-wave electrode with high radio-frequency (RF) gain that could be used in high-frequency analog application. By terminating the RF output port with the characteristic impedance of 30 /spl Omega/, the device exhibited a large enhancement of 6 dB above 10 GHz in the electrical-to-optical response and a wide fractional bandwidth as estimated from simulation. In addition, an input impedance matching circuit of stub embedded on the device chip was found to be very effective for improving RF characteristics in the narrow band of frequency.     

热收缩套管及其成型方法

本文介绍了热收缩套管的收缩机理及成型方法，如气压吹胀法、机械扩张法和缠绕法等。并对管材结构、原料及主要工艺技术简要地进行了比较和评价。     

Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.     

巧点火锅鸳鸯谱

北风起．火锅热。户外寒气逼人，屋内热气腾腾．鲜红的肉片。翠生生的青菜．在或红或白滚烫的锅中上下飞舞，仅是这灵动的姿态就让人禁受不住媚惑，抬手、举箸．一番狼吞虎咽，于是热气从心底缓缓升起，寒冷顿时一扫而空。[编者按]     

Pseudorandomness of Basic Structures in the Block Cipher KASUMI

The notion of pseudorandomness is the theoretical foundation on which to consider the soundness of a basic structure used in some block ciphers. We examine the pseudorandomness of the block cipher KASUMI, which will be used in the next‐generation cellular phones. First, we prove that the four‐round unbalanced MISTY‐type transformation is pseudorandom in order to illustrate the pseudorandomness of the inside round function FI of KASUMI under an adaptive distinguisher model. Second, we show that the three‐round KASUMI‐like structure is not pseudorandom but the four‐round KASUMI‐like structure is pseudorandom under a non‐adaptive distinguisher model.     

Near‐Infrared Light‐Emitting Diodes (LEDs) Based on Poly(phenylene)/Yb‐tris(β‐Diketonate) Complexes

Near‐infrared‐emitting electroluminescent (EL) devices using blue‐light‐emitting polymers blended with the Yb complexes Yb(DBM)₃phen (DBM = dibenzoylmethane), Yb(DNM)₃phen (DNM = dinaphthoylmethane), and Yb(TPP)L(OEt) (L(OEt) = [(C₅H₅)Co{P(O)Et₂}₃]^–) have been studied. EL devices composed of Yb(DNM)₃phen blended with PPP‐OR11 showed enhanced near‐IR output at 977 nm when compared to those fabricated with Yb(DBM)₃phen/PPP‐OR11 blends. The maximum near‐IR external efficiencies of the devices with Yb(DBM)₃phen and Yb(DNM)₃phen are, respectively, 7 × 10^–5 (at 6 V and at 0.81 mA mm^–2) and 4 × 10^–4 (at 7 V, and 0.74 mA mm^–2). The optimal blend composition for EL device performance consisted of PPP‐OR11 blended with 10–20 mol‐% Yb(DNM)₃phen. A device fabricated using Yb‐(TPP)L(OEt)/PPP‐OR11 showed significantly enhanced near‐IR output efficiency, and future efforts will focus on devices fabricated using porphyrin‐based materials.     

Three-temperature modeling of carrier-phonon interactions in thin GaAs film structures irradiated by picosecond pulse lasers

This article investigates numerically the carrier-phonon interactions in thin gallium arsenide (GaAs) film structures irradiated by subpicosecond laser pulses to figure out the role of several recombination processes on the energy transport during laser pulses and to examine the effects of laser fluences and pulses on non-equilibrium energy transfer characteristics in thin film structures. The self-consistent hydrodynamic equations derived from the Boltzmann transport equations are established for carriers and two different types of phonons, i.e., acoustic phonons and longitudinal optical (LO) phonons. From the results, it is found that the two-peak structure of carrier temperatures depends mainly on the pulse durations, laser fluences, and nonradiative recombination processes, two different phonons are in nonequilibrium state within such lagging times, and this lagging effect can be neglected for longer pulses. Finally, at the initial stage of laser irradiation, SRH recombination rates increases sufficiently because the abrupt increase in carrier number density no longer permits Auger recombination to be activated. For thin GaAs film structures, it is thus seen that Auger recombination is negligible even at high temperature during laser irradiation.