Influences of Connecting Unit Architecture on the Performance of Tandem Organic Light‐Emitting Devices

The present work investigates the influence of the n‐type layer in the connecting unit on the performance of tandem organic light‐emitting devices (OLEDs). The n‐type layer is typically an organic electron‐transporting layer doped with reactive metals. By systematically varying the metal dopants and the electron‐transporting hosts, we have identified the important factors affecting the performance of the tandem OLEDs. Contrary to common belief, device characteristics were found to be insensitive to metal work functions, as supported by the ultraviolet photoemission spectroscopy results that the lowest unoccupied molecular orbitals of all metal‐doped n‐type layers studied here have similar energy levels. It suggests that the electron injection barriers from the connecting units are not sensitive to the metal dopant used. On the other hand, it was found that performance of the n‐type layers depends on their electrical conductivities which can be improved by using an electron‐transporting host with higher electron mobility. This effect is further modulated by the optical transparency of constituent organic layers. The efficiency of tandem OLEDs would decrease as the optical transmittance decreases.     

Hiding data in multitone images for data communications

Two novel data-hiding schemes for secure data communications are presented. These two schemes perform on the pixel differences between the original (host) image and the decompressed image, which is inspired from Wu's and Chao's methods. The first scheme, referred to as 'scheme-1', utilises the differences between two similar images and then embeds the secret data into the different parts. In the embedding process, two auxiliary techniques, zero-replacement and complement-bit, will also be incorporated. In addition, to enhance the hiding efficiency of scheme-1, the authors have followed the bit-plane hiding strategy and created scheme-2. The proposed schemes have two advantages. First, the error distortion can be measured before the hiding process begins. Second, there is no complex computation, which means the hiding process can be executed very efficiently. The experimental results show that the two proposed schemes can achieve better image quality than other data-hiding schemes. At the same time, the new schemes can also satisfy the three basic requirements a data hiding scheme should live up to: invisibility, capacity and data security.     

基于CORDIC的一种高速实时定点FFT的FPGA实现

本文论述了一种利用CORDIC算法在FPGA上实现高速实时定点FFF的设计方案。利用CORDIC算法来实现复数乘法，与使用乘法器相比降低了系统的资源占用率，提高了系统速度[1]。设计基于基4时序抽取FFT算法，采用双端口内置RAM和流水线串行工作方式。本设计针对256点、24位长数据进行运算，在XilnxSpartan2E系列的xc2s300e器件下载验证通过，完成一次运算约为12μs，可运用于高速DSP、数字签名算法等对速度要求高的领域。     

Low-power compact 2×2 thermooptic silica-on-silicon waveguideswitch with fast response

5-mm-long and 50-μm-wide thermooptic waveguide 2×2 Mach-Zehnder interferometer (MZI) switches with multimode interference (MMI) couplers have been realized in silica-on-silicon. The use of diffused square waveguides with a separating trench results in low heating power of 110 mW for π phase shift and short rise and fall times of 150 and 180 μs, respectively     

横电磁波传输室的三维FDTD法分析

本文运用时域有限差分（FDTD）法模拟电磁波在TEMcell（横电磁波传输室）中的传输，并对之进行了三维分析，给出了TEMcell中TEM模场的横截面分布及纵向分布；计算了TEM模与高阶模的谐振频率；分析了TEMcell的上限可用频率。此结果对横电波传输室的设计和使用具有重要意义。     

Life assessment activities of fossil fuel power plant in the Republic of China

A service-life evaluation program on the electricity generation units of Taipower Company (TPC) has been inaugurated since 1985. Based on a survey of five different types of boiler units generated by fossil fuel, a generic procedure for the component evaluation and service-life assessment was established. The major degradation mechanisms of each of the key components/systems of the fossil fuel power units are discussed. The elements of the database software are described which are relevant in carrying out life assessment work. The limitations of applying these methods are addressed based on the experiences in performing the life assessment work for the fossil power plants of Taipower Company in the ROC.     

A 16 MHz, 59.2 ppm/°C CMOS DLL-Assisted VCO with Improved Frequency Stability Towards Single Chip Wireless IOT

A 16 MHz, highly stable voltage controlled oscillator (VCO) is reported in this paper. The proposed VCO consists of three cross-coupled RC stages, and is fully compatible with standard CMOS process. A positively biased PN junction with negative temperature coefficient is incorporated in the design to compensate frequency drift. In addition, a delay locked loop (DLL) directly following the VCO is utilized to further improve the output stability caused by temperature variations. The designed circuit was implemented using CMOS 0.18 μm technology, and was validated through experiments. Measurement results show that the DLL-assisted VCO output variation across the 25~120 °C temperature range is less than 0.56 %, corresponding to 59.2 ppm/°C. It also shows that the output standard deviation of the DLL-assisted VCO is only 6.816 KHz, ~ 16.6 % better compared with the same VCO without DLL’s assistance.     

Silicon‐Modified Rare‐Earth Transitions—A New Route to Near‐ and Mid‐IR Photonics

Silicon underpins microelectronics but lacks the photonic capability needed for next‐generation systems and currently relies on a highly undesirable hybridization of separate discrete devices using direct band gap semiconductors. Rare‐earth (RE) implantation is a promising approach to bestow photonic capability to silicon but is limited to internal RE transition wavelengths. Reported here is the first observation of direct optical transitions from the silicon band edge to internal f‐levels of implanted REs (Ce, Eu, and Yb); this overturns previously held assumptions about the alignment of RE levels to the silicon band gap. The photoluminescence lines are massively redshifted to several technologically useful wavelengths and modeling of their splitting indicates that they must originate from the REs. Eu‐implanted silicon devices display a greatly enhanced electroluminescence efficiency of 8%. Also observed is the first crystal field splitting in Ce luminescence. Mid‐IR silicon photodetectors with specific detectivities comparable to existing state‐of‐the‐art mid‐IR detectors are demonstrated.     

量子绝热近似条件与量子几何势

阐述了传统量子绝热定理,给出了传统的量子绝热近似条件.基于传统的量子绝热近似条件存在不足,采用微扰论思想,通过 绝热变换不变,给出并讨论了新的绝热理论以及新的绝热近似条件.最后对新的绝热条件中所包含量子几何势的几何性进行了较为深入的分析和讨论.