Gain equalization by mitigating self-filtering effect in a chain ofcascaded EDFA's for WDM transmissions

A simple method of alternatively using high-inversion and moderate-inversion erbium-doped fiber amplifiers (EDFA's) in an optical amplifier chain is presented to mitigate the self-filtering effect and equalize both signal power and signal-to-noise ratio (SNR) of multiple wavelength channels in wavelength-division multiplexing (WDM) transmission systems. The performance of the compensated system with alternatively used high- and moderate-inversion amplifiers is compared with the uncompensated ones where only moderate- or high-inversion amplifiers are employed. The result shows that the compensated system has a flatter gain profile, a lesser signal power spread, and SNR degradation     

The relationship among oxygen content, defect distribution and superconductivity in BiSrCaCuO systems

The effect of oxygen content on superconductivity of the 2212 and 2223 phase has been studied. By comparing the excess oxygen, the modulation vector, the XRD patterns, and the electric resistivity of 2212 and 2223 phase samples obtained with different post-annealing conditions, i.e., annealing at 600°C or quenching from 860°C, it was found that the super-conductivity is markedly influenced by both the defect distribution in non-Bi layers and the interstitial oxygens incorporated in the Bi-O layers. A tentative explanation for this is given.     

Non-steady-state model for kinetics of free radical polymerization, 4. Direct thermal initiation

This paper deals with the non-steady-state kinetics of direct thermal initiated polymerization. The initiation is assumed to be a bimolecular reaction of the monomer. The relationship between the radical concentration and the monomer conversion is rigorously derived. In further treatment a few very close approximations are introduced based on the fact that the number of monomer molecules reacting in the initiation step is much less than that consumed in the propagation step for a process producing high polymer, and the value of the rate constant for propagation or chain transfer is much lower than that for chain termination. Expressions for various molecular parameters, such as molecular weight distribution, number-average and weight-average degrees of polymerization, and dispersity, are given. Several numerical examples are provided.     

Observation of atomic steps on CaCO3 crystal surface

By using scanning polarization force microscopy,the deliquescence process and the atomic steps on the cleavage surface of CaCO3 in air were studied in situ.Under an exposure to medium umidity(-57%),the sloiw step movement has been observed.     

Synthesis, characteristics and oxygen-sensitive properties of SrMgxTi 1 − xO3 nanocrystals

SrMg_xTi_{1 - x}O₃ nanocrystals (x = 0.1–0.6) were synthesized by the stearic acid gel method. Powder samples were characterized by X-ray diffraction and X-ray photoelectron (XP) spectroscopy. The results showed that the lattice parameter a and the O 1s XP spectrum changed not only with the Mg content x but also with the grain size d of the samples. The conductivity of a thick film specimen fabricated on an aluminium oxide wafer was investigated in a nitrogen—oxygen atmosphere.     

小方坯连铸机的PLC自动控制

本文对弧型小方坯连铸机工艺与设备进行了分析，介绍了连铸生产的ＰＬＣ控制系统。及其软件设计。     

工业汽轮机的清洗

本文介绍了用饱和蒸汽对冷凝式汽轮机进行清洗除垢时主要参数的确定、操作要点及清洗方案，清洗后的汽轮机运行正常。     

2-D dopant profiling in VLSI devices using dopant-selectiveetching: an atomic force microscopy study

We report a detailed mapping of a 2-D dopant profile on a fully processed industrial sample with large dynamic range and high spatial resolution by utilizing a dopant-selective etching process and Atomic Force Microscopy. The experimental results show excellent agreement with those obtained from SRP and SIMS as corroborative methods. We also discuss the most critical factors which influence the applicability, reproducibility, and reliability of this method     

The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise

The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process