Editorial: Machine Learning and Intelligent Communications (MLICOM 2018)

Mobile Networks and Applications -     

Does PageRank apply to service ranking in microservice regression testing?

Software Quality Journal - Regression testing is required in each development iteration of microservice systems. Test case prioritization, which improves the fault detection rate by optimizing the...     

Distributed algorithm for mixed equilibrium problems with event-triggered strategy

Neural Computing and Applications - A new iterative method based on the event-triggered strategy for finding a solution to a mixed equilibrium problem (MEP) is introduced in this paper. The target...     

Analysis of Internet Financial Risks Based on Deep Learning and BP Neural Network

Computational Economics - The study aims to analyze and forecast Internet financial risks based on the model based on deep learning and the Back Propagation Neural Network (BPNN). First, the theory...     

Design of dynamic genetic memory

In electronic systems, dynamic random access memory (DRAM) is one of the core modules in the modern silicon computer. As for a bio‐computer, one would need a mechanism for storage of bio‐information named ‘data’, which, in binary logic, has two levels, logical high and logical low, or in the normalised form, ‘1’ and ‘0’. This study proposes a possible genetic DRAM based on the modified electronic configuration, which uses the biological reaction to fulfil an equivalent RC circuit constituting a memory cell. The authors implement fundamental functions of the genetic DRAM by incorporating a genetic toggle switch for data hold. The results of simulation verify that the basic function can be used on a bio‐storage module for the future bio‐computer.Inspec keywords: DRAM chips, genetic engineering, biocomputers, bioinformatics, equivalent circuits, RC circuitsOther keywords: dynamic genetic memory design, electronic systems, dynamic random access memory, modern silicon computer, biocomputer, bioinformation, binary logic, logical high level, logical low level, normalised form, genetic DRAM, modified electronic configuration, biological reaction, equivalent RC circuit, memory cell, fundamental functions, genetic toggle switch, data hold, biostorage module     

Monolithically integrated CoP nanowire array: An on/off switch for effective on-demand hydrogen generation via hydrolysis of NaBH<Subscript>4</Subscript> and NH<Subscript>3</Subscript>BH<Subscript>3</Subscript>

The issues of hydrogen generation and storage have hindered the widespread use and commercialization of hydrogen fuel cell vehicles.It is thus highly attractive,but the design and development of highly active non-noble-metal catalysts for on-demand hydrogen release from alkaline NaBH4 solution under mild conditions remains a key challenge.Herein,we describe the use of CoP nanowire array integrated on a Ti mesh (CoP NA/Ti) as a three-dimensional (3D) monolithic catalyst for efficient hydrolytic dehydrogenation of NaBH4 in basic solutions.The CoP NA/Ti works as an on/off switch for on-demand hydrogen generation at a rate of 6,500 mL/(min.g) and a low activation energy of 41 kJ/mol.It is highly robust for repeated usage after recycling,without sacrificing catalytic performance.Remarkably,this catalyst also performs efficiently for the hydrolysis of NH3BH3.     

Epitaxial growth and thermal-conductivity limit of single-crystalline Bi2Se3/In2Se3 superlattices on mica

Nano Research - Thermal transport in superlattices is governed by various phonon-scattering processes. For extracting the phonon-scattering contribution of hetero-interfaces in chalcogenide...     

Detwinning through migration of twin boundaries in nanotwinned Cu films under in situ ion irradiation

The mechanism of radiation-induced detwinning is different from that of deformation detwinning as the former is dominated by supersaturated radiation-induced defects while the latter is usually triggered by global stress. In situ Kr ion irradiation was performed to study the detwinning mechanism of nanotwinned Cu films with various twin thicknesses. Two types of incoherent twin boundaries (ITBs), so-called fixed ITBs and free ITBs, are characterized based on their structural features, and the difference in their migration behavior is investigated. It is observed that detwinning during radiation is attributed to the frequent migration of free ITBs, while the migration of fixed ITBs is absent. Statistics shows that the migration distance of free ITBs is thickness and dose dependent. Potential migration mechanisms are discussed.     

A Two‐Stage Annealing Strategy for Crystallization Control of CH3NH3PbI3 Films toward Highly Reproducible Perovskite Solar Cells

The solvent‐engineering method is widely used to fabricate top‐performing perovskite solar cells, which, however, usually exhibit inferior reproducibility. Herein, a two‐stage annealing (TSA) strategy is demonstrated for processing of perovskite films, namely, annealing the intermediate phase at 60 °C for the first stage then at 100 °C for the second stage. Compared to conventional direct annealing temperature (DHA) at 100 °C, using this strategy, MAPbI₃ films become more controllable, leading to superior film uniformity and device reproducibility with the champion device efficiency reaching 19.8%. More specifically, the coefficient of variation of efficiency for 49 cells is reduced to 5.9%, compared to 9.8% for that using DHA. The TSA process is carefully studied using Fourier transform infrared spectroscopy, X‐ray diffraction, and UV–vis absorption spectroscopy. It is found that in comparison with DHA the formation of hydrogen bonding and crystallization of perovskite are much slower and can be better controlled when using TSA. The improvements in film uniformity and device reproducibility are attributed to: 1) controllable MAPbI₃ crystal growth stemming from the progressive formation of hydrogen bonding between methylammonium and halide; 2) suppression of intermediate phase film dewetting, which is believed to be due to its decreased mobility at the initial low‐temperature annealing stage.