介质加载圆柱腔的场分析

本文应用严格场匹配法解决了介质加载圆柱腔的本征问题，计算了圆柱腔在纵向部分填充介质后ＴＥ０１ｎ模和ＴＭ０１ｎ模的本征频率和本征场型的变化。特别分析了本征模式在空气段为截止模的情况。本文的分析方法亦可应用到纵向部分填充介质的传输线和其它形状的谐振腔。     

陶瓷传感器的微型化与集成化

本文主要介绍陶瓷传感器在微型化及集成化方面的进展；指出了集成化多功能传感器存在的技术问题及未来发展趋势。     

高质量的一级光栅1．55μmDFB激光器

本文详细叙述了ＤＦＢ激光器的设计要点和新的工艺。采用一级全息光栅和二步液相外延法批量研制出高稳定单纵模工作的１．５５μｍ分布反馈激光器（ＤＦＢ—ＬＤ）。外延片成品率＞４０％。器件特性：２５℃时阈值电流２０ｍＡ，单面光功率＞１０ｍｗ，主边模抑制比ＳＭＳＲ达４３ｄＢ（λ／４相移光栅），谱线宽度△ν－２０ｄＢ＝０．３ｎｍ，调制速率＞１．８ＧＨｚ。可靠性测试显示：高温监测光谱稳定，２５°Ｃ时阈值退化率△Ｉｔｈ／ｔ＜０．３ｍＡ／ｋｈ，对应器件预估寿命将超过１０万ｈ。     

隧穿问题的数值算法

本文给出一种新的数值方法，用以计算隧道效应中的透射系数和相移。这个方法适用于任意形状的势垒，不仅可以计算透射系数，还可以计算透射波和反射波的相位。分析表明该方法具有很高的精度。     

快速Hartley变换在实时相关器中的应用

快速Ｈａｒｔｌｅｙ变换（ＦＨＴ）是离散Ｈａｒｔｌｅｙ变换（ＤＨＴ）的快速算法，它是一种实序的变换，其正反变换具有完全相同的形式。利用ＦＨＴ进行实数据相关可以避免复数运算，特别适用于采和可编程数字信号处理器（ＤＳＰ）来实现的实时相关器。和ＦＦＴ相关算法相比，在保持同样数据吞吐率的情况下，采用ＦＨＴ方法，可显著减少系统所需的高速存贮器，从而，可降低系统的成本。本文讨论了ＤＨＴ的有关性质和ＦＨＴ算法和运     

聚合物泥浆降粘剂PT－1降粘作用研究

ＰＴ－１降粘剂是顺丁烯二酸（酐）与乙烯基单体的共聚物。本文通过扫描电镜、粒度分析、Ｘ射线衍射等分析测定，研究了ＰＴ－１在膨润土泥浆和聚合物泥浆中的降粘作用，探讨了ＰＴ－１的降粘机理。     

一维波动方程反演波阻抗的实现及效果

利用波动方程反演波阻抗，由于计算工作量大、稳定性差等原因，一直没有在地震勘探资料处理中得到实际应用。本文提出的一维波方程逐段折叠反演方法能较好地克服上述缺陷，具有计算量相对较小、精度高、稳定性好等特点。并在大庆长垣东部和西部的实际资料处理中见到了良好的效果。     

Modeling low-frequency electrode-type resistivity tools in invadedthin beds

The authors formulate and implement a numerical mode-matching (NMM) method to model electrode-type resistivity tools in invaded thin beds. The authors derive the low-frequency approximation of the Maxwell's equations to obtain the partial differential equation for the potential field. The new NMM program is validated by comparing the numerical results with those obtained from other dc programs. It is found that this new program is much faster than the program using the finite-element method (FEM), and hence is useful for routine interpretation of resistivity logs and for inversion     

An error and sensitivity analysis of the atmospheric- andsoil-correcting variants of the NDVI for the MODIS-EOS

Several soil- and atmospheric-correcting variants of the normalized difference vegetation index (NDVI) have been proposed to improve the accuracy in estimating biophysical plant parameters. In this study, a sensitivity analysis, utilizing simulated model data, was conducted on the NDVI and variants by analyzing the atmospheric- and soil-perturbed responses as a continuous function of leaf area index. Percent relative error and vegetation equivalent “noise” (VEN) were calculated for soil and atmospheric influences, separately and combined. The NDVI variants included the soil-adjusted vegetation index (SAVI), the atmospherically resistant vegetation index (ARVI), the soil-adjusted and atmospherically resistant vegetation index (SARVI), the modified SAVI (MSAVI), and modified SARVI (MSARVI). Soil and atmospheric error were of similar magnitudes, but varied with the vegetation index. All new variants outperformed the NDVI. The atmospherically resistant versions minimized atmospheric noise, but enhanced soil noise, while the soil adjusted variants minimized soil noise, but remained sensitive to the atmosphere. The SARVI, which had both a soil and atmosphere calibration term, performed the best with a relative error of 10 percent and VEN of ±0.33 LAI. By contrast, the NDM had a relative error of 20 percent and VEN of ±0.97 LAI     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate