综合孔径辐射计可见度函数预处理算法及时域仿真研究

该文研究了干涉式综合孔径辐射计可见度函数的预处理算法,包括A/D偏置校正、三阶数字相关系数到模拟相关系数的校正、IQ非正交校正以及空间去相关的误差校正等等。由于这是首次将三阶量化数字相关的定标方法应用于对地观测领域,对其进行了详细的分析。该文利用蒙特卡洛方法对可见度函数的预处理算法进行了时域仿真的研究。并通过地球同步轨道毫米波大气温度探测仪地面样机系统对算法进行了验证,证明了该算法的正确性。经过可见度预处理算法校正得到的结果的绝对误差小于真值的0.1%。证明该算法可以应用于地球同步轨道毫米波大气温度探测仪星载系统定标中,经过校正得到的相关结果可以直接用于亮温图像的反演。     

大功率半导体激光列阵单光纤耦合技术

利用阶梯反射镜整形技术和偏振合束及波长合束技术成功将两只波长为808nm和两只波长为980nm的40W大功率半导体激光器光束进行混合,最后得到输出功率为95.8W、耦合效率为60%的双波长大功率半导体激光列阵单光纤耦合模块,光纤芯径为400μm,数值孔径为0.22.     

分子束外延生长的GaSb热光伏电池器件特性研究

利用分子束外延的方法在GaSb衬底上生长GaSb热光伏电池单元,制作了两种不同的1 cm×1 cm面积尺寸的热光伏电池单元,它们有着不同的电极形状。通过不断优化分子束外延的生长条件,以期得到高质量的GaSb外延层。AFM图中显示的表面形貌表明器件有着高质量的外延层,其表面形貌的RMS只有1.5 ? （1 ?=0.1 nm）。测量和比较了两种热光伏电池的器件特性,包括开路电压、短路电流密度、光电转换效率、填充因子以及暗电流密度。在一个模拟太阳光照射下,热光伏电池单元有着0.303 V的开路电压和27.1 mA/cm2的短路电流密度。和只有简单电极形状的热光伏电池单元进行对比,有栅形电极形状的热光伏电池单元在短路电流密度和填充因子上具有更优异的表现。在红外光的照射下,有栅形电极形状的热光伏电池达到了一个最优的填充因子56.8%。     

基于LMI的超燃冲压发动机鲁棒PI控制器设计

首先将燃油供给系统作为超燃冲压发动机的主导动态,并假设燃油供给系统为惯性环节,构建了超燃冲压发动机推力闭环控制系统．然后基于LMI理论提出了一种单输入单输出系统PI控制器参数整定方法,并给出了该控制器存在的一个充分条件．最后基于该方法设计了超燃冲压发动机单点喷油推力闭环控制系统的PI控制器,仿真结果表明,该控制器具有良好的鲁棒性．     

Super-Stretchable,Anti-Freezing,Anti-Drying Organogel Ionic Conductor for Multi-Mode Flexible Electronics

Due to their intrinsic flexibility, tunable conductivity, multiple stimulus-response, and self-healing ability, ionic conductive hydrogels have drawn significant attention in flexible/wearable electronics. However, challenges remain because traditional hydrogels inevitably faced the problems of losing flexibility and conductivity because of the inner water loss when exposed to the ambient environment. Besides, the water inside the hydrogel will freeze at the water icing temperatures, making the device hard and fragile. As a promising alternative, organogels have attracted wide attention because they can, to some extent, overcome the above drawbacks. Herein, a kind of organogel ionic conductor (MOIC) by a self-polymerization reaction is involved, which is super stretchable, anti-drying, and anti-freezing. Meanwhile, it can still maintain high mechanical stability after alternately loading/unloading at the strain of 600% for 600 s (1800 cycles). Using this MOIC, high-performance triboelectric nanogenerator (TENG) is constructed (MOIC-TENG) to harvest small mechanical energy even the MOIC electrode underwent an extremely low temperature. In addition, multifunctional flexible/wearable sensors (strain sensor, piezoresistive sensor, and tactile sensor) are realized to monitor human motions in real time, and recognize different materials by triboelectric effect. This study demonstrates a promising candidate material for flexible/wearable electronics such as electronic skin, flexible sensors, and human-machine interfaces.     

基于无线ATM的快速切换管理新方案

未来的移动通信网应发展成以异步传模式（ＡＴＭ） 为基础,支持多媒体业务的网络。为了在这种环境下实现无缝隙、快速切换,提出了在相邻基站间备用永久虚连接（ＰＶＣ） 的一种快速切换管理方案,并计算了给定ＰＶＣ 带宽时的切换阻塞概率。本方案与Ａｃａｍ ｐｏｒａ 的虚连接树（ＶＣＴ） 相比,有效地节省了有线链路资源,并在切换过程中保持本地小区序列的完整性     

梁柱节点不同强度等级混凝土的施工

结合工程施工配合,提出当柱子混凝土强度等级大于梁混凝土强度等级（尤其高层建筑）时的施工方法和施工中应当注意的问题.     

Characterization and profile optimization of SiGe pFETs onsilicon-on-sapphire

We present the details of the fabrication, electrical characterization, and profile optimization of a SiGe pFET on silicon-on-sapphire (SOS) technology. The results show that the SiGe pFETs have higher low-field mobility (μ_eff), transconductance (g_m), and cutoff frequency (f_T) than a comparable Si pFET. At low temperature (85 K), a secondary peak is observed in the linear g_m of the SiGe pFETs and is attributed to hole confinement in the SiGe channel. The effect of reducing the SOS film thickness on the mobility and short-channel performance is studied. A low-frequency noise study shows significant improvement in the SiGe pPETs over comparable Si pFETs, and is attributed to a lower sampling of interface trap density caused by the band offset at the oxide interface due to SiGe. Drain Induced Back Channel Inversion (DIBCI) is shown to occur in short gate length devices, resulting in high off-state leakage current through conduction at the back silicon-sapphire interface. The paper also discusses important optimization issues in the design of 0.25-μm gate length SiGe pFETs. A novel structure is proposed which optimizes the threshold voltage, maximizes hole confinement gate voltage range and cutoff frequency, while at the same time minimizing DIBCI to make the design usable to gate lengths as short as 0.25 μm     

基于数字水印的证件防伪技术

证件防伪是人们广泛关注的社会问题。本文提出了一种基于数字水印的证件防伪技术方案。该方案将水印嵌入到证件持有人的数字照片中,通过对数字照片边界的RADON变换来矫正图像在打印扫描(简称PS)过程中引入的几何失真,以证件号码为种子,产生具有良好自相关特性的随机序列作为水印信号,为提高水印的鲁棒性,采用强度自适应的DCT系数局部调整法,将水印重复多次嵌入到图像的分块DCT中频系数中。水印的提取采用相似度检测法,无需原始的图像。实验结果证明了该方案的可行性和有效性。与其他防伪技术相比,基于数字水印的证件防伪技术具有隐蔽性好,保密性强,技术容易更新,无需特殊材料和工艺,成本较低等突出的优点。     

Enhancement of refresh time in quasi-nonvolatile memory by the density of states engineering

The recently reported quasi-nonvolatile memory based on semi-floating gate architecture has attracted extensive at-tention thanks to its potential to bridge the large gap between volatile and nonvolatile memory.However,the further exten-sion of the refresh time in quasi-nonvolatile memory is limited by the charge leakage through the p-n junction.Here,based on the density of states engineered van der Waals heterostructures,the leakage of electrons from the floating gate to the channel is greatly suppressed.As a result,the refresh time is effectively extended to more than 100 s,which is the longest among all pre-viously reported quasi-nonvolatile memories.This work provides a new idea to enhance the refresh time of quasi-nonvolatile memory by the density of states engineering and demonstrates great application potential for high-speed and low-power memory technology.