LD端面抽运Nd:YLF/Nd:YAG多波长脉冲激光器

报道了一台激光二极管(LD)双端面抽运Nd:YLF和Nd:YAG双晶体串接多波长输出脉冲激光器。在抽运能量40.5mJ,电光调Q重复频率500Hz的工作条件下,获得单脉冲能量约为6mJ的1064nm/1053nm双波长激光脉冲输出,光-光转换效率约为14.8%。相同抽运条件下在腔内插入I类相位匹配LBO晶体作为非线性频率转换器,获得了脉冲总能量为3.6mJ的526.5、529.0、532.0nm三波长同时输出,由抽运光到输出绿光脉冲的转换效率约为8.9%,测得光束质量因子分别为M2x=1.61,My2=1.25。     

天线隔离度的频率依赖特性

明确地指出了在计算2个不同频系统的天线隔离度时,天线的功率效率和方向图是随频率变化的,一些情况下是需要使用天线在失配区特性的;详细地阐述了一种估算单频段垂直极化偶极子阵列结构的基站天线方向图参数随频率变化的方法;通过计算电磁学仿真对该方法进行了验证;实际测量实验也表明隔离度和天线频率特性是密切相关的。     

六相感应电动机制动仿真及分析

建立六相感应电动机在两相同步旋转d-q坐标系下的动态数学模型,并分析六相电压源型逆变器的空间矢量脉宽调制(SVPWM)技术。在MATLAB/SIMULINK环境下,构建SVPWM电压源型逆变器供电的六相感应电动机的仿真模型,分别进行六相感应电动机能耗制动、反接制动和回馈制动的动态仿真,并分析这三种制动方式的特点,为电力传动系统的设计提供理论依据。     

石墨烯的SiC外延生长及应用(续)

正3.3 X射线光电子能谱XPS能谱分析的基本原理:一定能量的X光照射到样品表面和待测物质发生作用,可以使待测物质原子中的电子脱离原子成为自由电子。通过接收并测量这些光电子的能量,得到原子或分子内部各轨道的结合能,从而就可以了解样品中元素的组成。图8所示为样品的XPS能谱图,图中各峰值     

多层HgCdTe异质外延材料的热退火应力分析

前期研究采用高温热处理方法,获得了抑制位错的最佳退火条件.通过比对实验,发现不同衬底上HgCdTe表面的CdTe钝化层在热处理过程中对位错的抑制作用各有不同.结合晶格失配应力和热应力对不同异质结构进行理论计算,借助X射线摇摆曲线的倒易空间分析,解释了CdTe钝化层对HgCdTe位错抑制的影响作用.     

FPGA阵列芯片的自然统一研究

FPGA是1984年Rose Freeman发明的一种支持OLP计算模式的阵列芯片,实现了非数据并行算法计算的高效性.但是,OLP计算模式是采用VHDL/Verilog等硬件描述语言,通过逻辑设计将算法映射到FPGA阵列芯片上的,应用的抽象层次低,而且FPGA阵列芯片体系结构,与实现数据并行算法计算的GPU系统芯片体系结构是不统一的.为了克服FPGA阵列芯片的这两个缺点,本文研究了能够等效替代OLP计算模式及其FPGA阵列芯片的ILP计算模式及其APU系统芯片,并自然统一了ILP与DLP两种计算模式的系统芯片体系结构.     

The electrical properties of HfO/sub 2/ dielectric on germanium and the substrate doping effect

MOS devices built on various germanium substrates, with chemical vapor deposited (CVD) or physical vapor deposited (PVD) HfO/sub 2/ high-/spl kappa/ dielectric and TaN gate electrode, were fabricated. The electrical properties of these devices, including the capacitance equivalent thickness (CET), gate leakage current density (J/sub g/), slow trap density (D/sub st/), breakdown voltage (V/sub bd/), capacitance-voltage (C-V) frequency dispersion, and thermal stability, are investigated. The process conditions such as surface nitridation treatment, O/sub 2/ introduction in CVD process and postdeposition anneal temperature in PVD process, exhibit significant impacts on the devices' electrical properties. The devices built on germanium substrates with different dopant types and doping concentrations show remarkable variations in electrical characteristics, revealing the role of the substrate doping in the reactions occurring at the dielectric/Ge interface, which can significantly affect the interfacial layer formation and Ge updiffusion. A possible mechanism is suggested that two competing processes (oxide growth and desorption) take place at the interface, which govern the formation of the interfacial layer. Doped p-type (Ga) and n-type (Sb) impurities may enhance the different process at the interface and cause the variations in the interfacial layer formation and so on in electrical properties. The high diffusivities of impurities and Ge atoms in Ge and the induced structural defects near the substrate surface could be one possible cause for this doping effect. As another behavior of the substrate doping effect, Ge n-MOS and p-MOS stacks show quite different C-V characteristics after high temperature postmetallization anneal treatments, which can be explained by the same mechanism.     

SIP穿越NAT

众多私有网络和地址转换技术(NAT)的存在,给使用会话初始协议(SIP)实现端到端的通信造成了困难.文中对NAT技术和SIP技术、SIP信令及媒体流穿越NAT的技术进行了描述.     

Transmission Characteristics of Ridge Waveguide Loaded with Left-Handed Materials

This paper presents a numerical study of the electromagnetic wave propagation in a double ridge waveguide, loaded with left-handed materials (LHM). The LHM is defined phenomenologically by assigning to it a negative permittivity and negative permeability simultaneously. Transmission characteristics such as cutoff wavelength, single-mode bandwidth, dispersion and field patterns have been investigated by edge-based finite element method. The results are compared to those with air- and dielectric-loaded ridge waveguide. It was found that the LHM-loaded ridge waveguide can greatly increase the cutoff wavelength with the disadvantage of a dramatic reduction in the single-mode bandwidth. The behavior of the dispersion curve of LHM-loaded ridge waveguide is similar to the cases of waveguide loaded with air or dielectric, except for a significant improvement of the propagation constant. The boundary conditions at the interface between the air and the LHM have been well illustrated and the antiparallel wave vector in LHM were obtained by considering the field patterns. The unusual behaviors of the LHM-loaded ridge waveguide provides the potential opportunities to design novel microwave and millimeter devices.     

利用光电反馈抑制钛宝石激光器低频段的强度噪声

对前置光电负反馈抑制钛宝石激光器强度噪声方法的特性进行了理论分析,表明注入噪声不同时对应的最佳反馈增益不同。利用前置光电负反馈方法,在实验上实现了全固态连续单频可调谐钛宝石激光器低频段的强度噪声抑制,通过调节反馈增益,使激光器的强度噪声抑制程度最大。在分析频率为1.125 MHz处,强度噪声由原来的8.7 dB降低到了1.4 dB,抑制程度达7.3 dB。调节反馈增益和相位延时,可以获得不同分析频率的强度噪声的降低。