Microstructure transformations induced by modified-layers on pentacene polymorphic films and their effect on performance of organic thin-film transistor

Phenyltrimethoxysilane was used to modify SiO₂ insulator and significantly enhanced the pentacene based organic thin-film transistors (OTFTs). The crystal structure, surface morphology, molecular structure and microstructure of pentacene polymorphic films with and without the modifications were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and contact angle meter. XRD studies reveal a decreased tilt angle (θ_T) of pentacene molecules from c-axis toward a-axis, indicating that polymorphs transformation from the “triclinic bulk” phase to the “thin film” phase and orthorhombic phase occurs. AFM images show that the surface roughness of gate insulators has no influence on performance of the pentacene based OTFT. These results provide strong evidence that the performance improvement of OTFT after PhTMS modification of SiO₂ insulator surface is related to the microstructure transformation of the semiconductor. It suggests that the modified-layer may alter the molecular geometry and further induce structural phase transitions in the pentacene films for the performance improvement.     

正交矩形波导复合耦合槽特性分析

两个正交矩形波导公共宽边上偏离中心线的耦合斜槽称为复合耦合槽。考虑波导壁的厚度，根据等效原理和缝隙口面切向磁场的连续条件建立一对耦合积分方程，利用矩量法进行求解，给出复合耦合槽的谐振长度、散射参量随缝隙的倾角、偏离波导中心线距离的关系曲线     

板状非线性介质表面耦合波的反射和透射

本文详细分析了平面波激励非线性介质后介质的非线性极化、麦克斯专方程及其解、广义的反射和透射定律；导出了板状非线性介质表面任意阶耦合波的反射场和透射场；对介质满足相位匹配和泵浦波正入射下的场进行了深入的讨论；给了非线性介质表面的布儒斯特角。     

GaN-based light emitting diodes on nano-hole patterned sapphire substrate prepared by three-beam laser interference lithography

Nano-hole patterned sapphire substrates (NHPSSs) were successfully prepared using a low-cost and high-efficiency approach, which is the laser interference lithography (LIL) combined with reactive ion etching (RIE) and inductively coupled plasma (ICP) techniques. Gallium nitride (GaN)-based light emitting diode (LED) structure was grown on NHPSS by metal organic chemical vapor deposition (MOCVD). Photoluminescence (PL) measurement was conducted to compare the luminescence efficiency of the GaN-based LED structure grown on NHPSS (NHPSS-LED) and that on unpatterned sapphire substrates (UPSS-LED). Electroluminescence (EL) measurement shows that the output power of NHPSS-LED is 2.3 times as high as that of UPSS-LED with an injection current of 150 mA. Both PL and EL results imply that NHPSS has an advantage in improving the crystalline quality of GaN epilayer and light extraction efficiency of LEDs at the same time.     

Microstructure and optoelectronic properties of gallium- titanium-zinc oxide thin films deposited by magnetron sputtering

Gallium-titanium-zinc oxide(GTZO) transparent conducting oxide(TCO) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The dependences of the microstructure and optoelectronic properties of GTZO thin films on Ar gas pressure were observed. The X-ray diffraction(XRD) and scanning electron microscopy(SEM) results show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. With the increment of Ar gas pressure, the microstructure and optoelectronic properties of GTZO thin films will be changed. When Ar gas pressure is 0.4 Pa, the deposited films possess the best crystal quality and optoelectronic properties.     

掺饵光纤放大器测试系统研制

报导了用积木式设计方法、由下列几部分组成的一套以拟合技术为基础的掺饵光纤放大器( EDFA)测试系统 :1低边模抑制波长和功率可调光源 ;2测试控制单元 ;3单色光功率计 ;4控制与数据采集和处理微机系统 ;5专用机柜 ;6系统控制与测试数据采集和处理软件。该系统可以测量EDFA的增益 G、噪声指数 NF和光功率 P等参数及其与波长λ的关系。波长测量范围是 1530～1570 nm,精度为± 0 .1nm;G和 N F的测量不确定度分别为± 0 .5d B和± 0 .7d B;光功率的测量精度为± 0 .2 d B。在这套系统中用“单色光功率计”代替了价格昂贵的光谱分析仪 ,并开发有良好的测试与控制系统软件 ,使该系统成为一套适用性与经济性很好、操作使用灵活、简单快速的 EDFA测试系统     

低比特率视频编码新标准H．263＋

介绍了低比特率视频编码新标准Ｈ．２６３＋。Ｈ．２６３＋是Ｈ．２６３的升级版本,增加了１２个新的编码可选模式。     

Studies of high DC current induced degradation in III-V nitridebased heterojunctions

We report experiments on high dc current stressing in commercial III-V nitride based heterojunction light-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the current-voltage (I-V) characteristics, electroluminescence, deep-level transient Fourier spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics subsequent to electrical stressing. The room temperature electroluminescence of the devices exhibited a 25% decrement in the peak emission intensity. Concentration of the deep-levels was examined by deep-level transient Fourier spectroscopy, which indicated an increase in the density of deep-traps from 2.7×10¹³ cm^-3 to 4.2×10¹³ cm^-3 at E₁=E _C-1.1 eV. The result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. These traps are typically located at energy levels beyond the range that can be characterized by conventional techniques including DLTS. The two experiments, therefore, provide a more complete picture of trap generation due to high dc current stressing     

A performance analysis of all-optical clock extraction circuit based on stimulated Brillouin scattering

In this paper, we develop an analytical method to deal with the timing performance in an optical clock extraction circuit based on stimulated Brillouin scattering (SBS). Three kinds of SBS active filters are considered and their frequency-transfer functions are obtained under the assumption that pump depletion caused by SBS is negligible. When pump depletion is taken into account, an SBS active filter acts as a nonlinear filter. To investigate the timing performance at this situation, we introduce the concept of "dynamic frequency-transfer function" to describe its frequency-response property for a fixed-signal light and pump light. Using the obtained "frequency-transfer function," we give analytical expressions for both root-mean-square (rms) phase jitter and rms amplitude jitter of the extracted optical clock, in which we have taken the impacts of SBS gain, pump light linewidth, optical pulse chirp, and pump detuning into account. Finally, a detailed numerical investigation on the timing performance for the three active filters is presented.     

Ultra-Stable and Sensitive Ultraviolet Photodetectors Based on Monocrystalline Perovskite Thin Films

The detection of ultraviolet (UV) radiation with effective performance and robust stability is essential to practical applications. Metal halide single-crystal perovskites (ABX₃) are promising next-generation materials for UV detection. The device performance of all-inorganic CsPbCl₃ photodetectors (PDs) is still limited by inner imperfection of crystals grown in solution. Here wafer-scale single-crystal CsPbCl₃ thin films are successfully grown by vapor-phase epitaxy method, and the as-constructed PDs under UV light illumination exhibit an ultralow dark current of 7.18 pA, ultrahigh ON/OFF ratio of ≈5.22 × 10⁵, competitive responsivity of 32.8 A W⁻¹, external quantum efficiency of 10867% and specific detectivity of 4.22 × 10¹² Jones. More importantly, they feature superb long-term stability toward moisture and oxygen within twenty-one months, good temperature tolerances at low and high temperatures. The ability of the photodetector arrays for excellent UV light imaging is further demonstrated.