土石过水围堰过水期最不利工况及其流量确定

本文系统分析了影响土石过水围堰溢流工况的主要因素，提出衡量最不利工况的指标和确定员不利流量的方法，为土石过水围堰堰体下游护坡结构及消能防冲设施设计提供了理论依据。通过理论计算结果与模型试验现场观测资料数据对比分析，说明提出的过水期最不利流量判别方法是符合实际情况的。     

共面波导有限金属厚度效应的研究

用保角变换法对共面波导金属厚度效应进行了理论分析，编制了相应的计算机程序，给出了数值解，并对此进行了多元曲线拟合，导出了考虑金属厚度后的形状比k、有效介电常数、特征阻抗、损耗的闭定表达式。用此修正表达式求得特征阻抗及损耗的数值解，并与K．C．格普塔的修正值及实验测量值进行了详细比较，结果表明此修正公式与实验值相符较好。     

反铁磁晶体的红外频率特性

研究了红外频段非线性s偏振表面波在反铁磁晶体和电介质交界面上的频率特性，求出了非线性色散方程，揭示了非线性s偏振表面波存在一个临界频率，低于这个频率，非线性s偏振表面波的频率范围，发现功率不再是决定导波频率范围的唯一因素，两种材料的介电常数比在这里起了至关重要的作用。     

辽宁省白石水库主要地质问题综述

本文着重就区域构造稳定性、水库渗漏、坝线比选、坝基地层岩性、坝基地质构造、坝基缓倾角结构面、坝基渗漏与渗透稳定、大坝下游冲刷坑、天然建筑材料等主要地质问题进行了综合评述。     

Analysis of the time response of multiconductor transmission lineswith frequency-dependent losses by the method ofconvolution-characteristics

A new method for analysis of the time response of multiconductor transmission lines with frequency-dependent losses is presented. This method can solve the time response of various kinds of transmission lines with arbitrary terminal networks. Particularly, it can analyze nonuniform lines with frequency-dependent losses, for which no effective method for analyzing their time response exists. This method starts from the frequency-domain telegrapher's equations. After decoupling and inversely Fourier transforming, then a set of decoupled time-domain equations including convolutions are given. These equations can be solved with the characteristic method. The results obtained with this method are stable and accurate. Two examples are given to illustrate the application of this method to various multiconductor transmission lines     

Modeling ion implantation of HgCdTe

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n⁺/n^-/p, where the n⁺ region is near the surface and roughly coincides with the implant damage, the n^- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.     

矿业可持续发展理论及应用

在简要回顾我国矿业发展现状及其在环境破坏污染和资源浪费损失的基础上，提出矿业可持纽发展的概念与内涵，论述矿业可持续发展的动态２特征，并就如何实施矿业可持结发展战略进行了思考。     

深亚微米MOSFET衬底电流的模拟与分析

利用器件模拟手段对深亚微米ＭＯＳＦＥＴ的衬底电流进行了研究和分析，给出了有效的道长度，栅氧厚度，源漏结深，衬底掺杂浓度以及电源电压对深亚微米ＭＯＳＦＥＴ衬底电流的影响，发现电源电压对深亚微米ＭＯＳＦＥＴ的衬底电流有着强烈的影响，热载流子效应随电源电压的降低而迅速减小，当电源电压降低到一定程度时，热载流子效应不再成为影响深亚微米ＭＯＳ电路可靠性的主要问题。     

PS,LS和煤油体系的界面张力

本文以石油磺酸盐(PS)、木质素磺酸盐(LS)和煤油体系为对象,研究了PS/LS比、盐度、醇、Na_2SiO_3及聚合物对体系界面张力(IFT)的影响,探讨了PS与各组分间的相互作用,结果发现,在一定盐度和混合醇(正丁醇+异丙醇)浓度下,PS/LS>0.3/0.7时,体系可形成中相微乳液,IFT值达1×10~(-3)mN/m左右;LS和聚合物的存在使IFT升高;在表面活性剂驱油体系中,可用廉价的LS部分代替PS。