一种低相位噪声采样时钟源的设计

分析了锁相环频率合成器与数字直接频率合成器的原理,阐述了二者性能的优劣。并在此基础上设计了一款低相位噪声的采样时钟源。该频率源结合锁相环和直接数字频率合成器的优势,在75 MHz时相位噪声可达-119 dBc@1 kHz、-116 dBc@100 kHz。     

一种基于TLM超混沌细胞神经网络图像加密新算法

混沌对初值敏感的特性使得它适合于数据加密。以4 阶CNN 模型为基础,提出了一种新的超混沌细胞神经网络图像加密算法。算法分为置乱和扩散二个阶段,复合混沌映射用于生成置乱阶段控制参数,用以置乱图像行列之间的高度互相关像素。在扩散阶段,使用不同初始状态和参数的复合混沌映射生成高阶混沌细胞神经网络的初始条件,以生成扩散阶段的密钥流。算法的已知明文和选择明文攻击、密钥空间和直方图的仿真实验均取得了良好的结果。与其他相关算法相比,该算法具有密钥敏感性和抗攻击性强的优点,适用于图像加密。     

基于分类树的雷达软件测试用例设计

现代雷达软件测试由于软件规模越来越大,利用常规的组合覆盖方法测试各功能单元工程上越来越不现实。文章针对分类树方法设计测试用例产生大量冗余测试用例的缺陷,提出了在分类树方法生成的用例集基础上,利用正交试验设计法对其进行精简优化,以提高测试效率。实验结果表明,基于正交试验设计法的测试用例优化,可以有效减少冗余测试用例,节省测试资源和成本,具有一定的工程应用价值。     

移动网智能管道发展的挑战和应对

探讨了移动智能管道的定义和内涵,分析目前移动网智能管道发展的架构、能力完善和协同、管道价值挖掘、运营机制优化这4个方面的挑战,并给出了应对策略。     

接触电极功函数对反式锡基钙钛矿太阳能电池性能的影响

因反式锡基钙钛矿太阳能电池可避免J-V迟滞以及铅元素,基于SCAPS-1D设计结构为ITO/HTL/CH3NH3SnI3/PCBM/back-contact的反式锡基钙钛矿太阳能电池器件.其中NiO、Cu2O以及P3HT分别作为空穴传输层,探讨导电玻璃ITO功函数在4.6?5.0 eV范围内电池性能的变化,并分析Al、...     

Rational Designs for Lithium-Sulfur Batteries with Low Electrolyte/Sulfur Ratio

Lithium-sulfur batteries (LSBs) are considered a promising next-generation energy storage device owing to their high theoretical energy density. However, their overall performance is limited by several critical issues such as lithium polysulfide (PS) shuttles, low sulfur utilization, and unstable Li metal anodes. Despite recent huge progress, the electrolyte/sulfur ratio (E/S) used is usually very high (≥20 µL mg⁻¹), which greatly reduces the practical energy density of devices. To push forward LSBs from the lab to the industry, considerable attention is devoted to reducing E/S while ensuring the electrochemical performance. To date, however, few reviews have comprehensively elucidated the possible strategies to achieve that purpose. In this review, recent advances in low E/S cathodes and anodes based on the issues resulting from low E/S and the corresponding solutions are summarized. These will be beneficial for a systematic understanding of the rational design ideas and research trends of low E/S LSBs. In particular, three strategies are proposed for cathodes: preventing PS formation/aggregation to avoid inadequate dissolution, designing multifunctional macroporous networks to address incomplete infiltration, and utilizing an imprison strategy to relieve the adsorption dependence on specific surface area. Finally, the challenges and future prospects for low E/S LSBs are discussed.     

光纤布拉格光栅非线性孤子的特性分析

以非线性耦合模理论为基础，用数值计算的方法分析了光纤光栅非线性孤子的特性。结果表明，在较弱光脉冲输入时，脉冲被展宽幅度降低；在强光脉冲输入时，脉冲的幅度，速度和脉宽保持不变，孤子形成；当更强光脉冲输入时，脉冲被压缩同时产生随距离而变的线性啁啾。当波长位于负色散区的弱脉冲和位于正常色散区的强泵浦脉冲共同传输时，输入弱脉冲被压缩。     

14-b 400-ksps 2.5-mW连续时间∑-Δ调制器

连续时间∑-△调制器较之传统的开关电容∑-△调制器具有更低的功耗、更小的面积,以及集成抗混叠滤波器等诸多优势.设计了一种应用于低中频GSM接收机的4阶单环单比特结构的连续时间∑-△调制器.在调制器中,采用了开关电容D/A转换器,以降低时钟抖动对性能的影响.仿真结果显示,在1.8 V工作电压、200 kHz信号带宽、0.18 μm CMOS工艺条件下,采样频率21 MHz,动态范围(DR)超过90 dB,功耗不超过2.5 mW.     

Relations Between Gabor Transforms and Fractional Fourier Transforms and Their Applications for Signal Processing

Many useful relations between the Gabor transform (GT) and the fractional Fourier transform (FRFT) have been derived. First, we find that, like the Wigner distribution function (WDF), the FRFT is also equivalent to the rotation operation of the GT. Then, we show that performing the scaled inverse Fourier transform (IFT) along an oblique line of the GT of f(t) can yield its FRFT. Since the GT is closely related to the FRFT, we can use it for analyzing the characteristics of the FRFT. Compared with the WDF, the GT does not have the cross-term problem. This advantage is important for the applications of filter design, sampling, and multiplexing in the FRFT domain. Moreover, we find that if the GT is combined with the WDF, the resultant operation [called the Gabor-Wigner transform (GWT)] also has rotation relation with the FRFT. We also derive the general form of the linear distribution that has rotation relation with the FRFT.     

北京正负电子对撞机次级束质子单粒子翻转计算和试验研究

北京正负电子对撞机(BEPC)电子直线加速器试验束打靶产生的次级束中包含质子,其中能量约为50MeV~100MeV的质子占有很大比例,这弥补了国内高能质子源的空白。本工作计算得到次级束中的质子能谱,建立质子单粒子翻转截面计算方法,在北京正负电子对撞机次级束质子辐射环境中,计算静态随机存取存储器的质子单粒子翻转截面,设计了SRAM质子单粒子翻转截面测试试验,发现SRAM单粒子翻转和注量有良好的线性,这是SRAM发生单粒子翻转的证据。统计得到不同特征尺寸下SRAM单粒子翻转截面,试验数据与计算结果相符,计算和试验结果表明随着器件特征尺寸的减小器件位单粒子翻转截面减小,但器件容量的增大,翻转截面依然增大,BEPC次级束中的质子束可以开展中高能质子单粒子效应测试。