Effect of ion energy on hydrogen diffusion in n- and p-GaAs

The ion energy during electron cyclotron resonance (ECR) plasma hydrogenation is found to have a strong effect on both the effective diffusivity and solubility of hydrogen in n⁺ and p⁺ GaAs. For fixed plasma exposure conditions (30 min, 250°C) the diffusion depths for -150 V acceleration voltage are ~50 and ~100% larger, respectively, in p⁺- and n⁺-GaAs compared to 0 V acceleration voltage. The smaller incorporation depths at lower ion energy coincide with much larger peak hydrogen concentrations and higher apparent thermal stability of passivated dopants     

关于生物系统超微弱发光的实验研究

生物系统存在超微弱光子辐射现象。通过一系列实验研究,我们认为,这种光子辐射既有低水平化学发光的性质,又有受激辐射的性质,是受激的低水平化学发光。     

Rapid isothermal processing for fabrication of GaAs-basedelectronic devices [HBTs]

The use of rapid isothermal processing (RIP) is detailed for each of the three annealing steps in the fabrication of heterostructure-based devices such as heterojunction bipolar transistors (HBTs). RIP can be used for the alloying of ohmic metal contacts, annealing of ion-bombarded regions for device isolation or parasitic capacitance reduction, and for conventional implant activation annealing. High-speed (f_T=65 GHz) HBTs were achieved using RIP for all of the required heating steps. The authors compare the use of several types of silicon carbide-coated graphite susceptors for eliminating slip formation on 2- and 3-in-diameter GaAs wafers during high-temperature implant activation annealing     

Nucleation and growth of nickel by electrodeposition under galvanostatic conditions

The first stages of nickel electrodeposition on amorphous carbon and polycrystalline silver substrates have been studied under galvanostatic conditions. An island growth mode is observed on the two types of substrate. For equivalent conditions the cluster density is higher on silver substrates than on carbon substrates. Dissolution of some nickel clusters is observed a short time after the onset of electrolysis on carbon substrates. This is confirmed by the evolution of the current efficiency and the evolution of the metal surface cluster density as a function of the quantity of electricity.     

广义物质平衡计算在凝析气藏开采动态预测中的应用

从经济的角度考虑 ,对小型凝析气藏衰竭式开采动态的预测往往不必或不值得进行数值模拟研究。常规物质平衡 (黑油 )计算方法只局限于黑油和干气藏 ,应用于凝析气藏则存在很大的误差。Walsh提出的广义物质平衡计算方法 ,可用于包括黑油、干气藏、挥发油气藏和凝析气藏在内的所有油气藏。文中将一个小型凝析气藏衰竭式开采动态的数值模拟结果与广义物质平衡计算结果进行了对比 ,结果表明 ,Walsh方法简便、应用更广泛 ,可用于规模较小、不适合进行数值模拟研究的凝析气藏的现场开发优化。     

Al-Cu-Fe系初生准晶相凝固过程的电子显微分析

采用包括金相（OM），粉末X射线衍射（XRD），扫描电子显微镜（SEM）观察和透射电子显微（TEM）分析等方法，研究了铸态Al592.Cu36.8Fe3.0Si1.0合金（700℃保温2．5h后水淬）的显微组织及相组成。发现铸锭中存在4种相：准晶I相，τ3相（或φ相），θ－Al2Cu相和η－AlCu相，凝固过程可描述为：初生晶是准晶Ⅰ相；在保温过程中发生包晶或共晶反应（L＋i→τ3(或φ）或L→τ3（或φ）＋i)形成的τ3相（或φ相），呈微畴结构；而剩余液体水淬形成θ－Al2Cu相和η－AlCu 相。     

岩石工程力学特性参数测定装置设计

岩石工程力学特性参数测定装置实现了对试验载荷的恒速率加载 ,可对压模的吃深和试验载荷进行连续记录 ,记录的数据可实时显示及处理 ,且动态显示试验岩石的特性曲线 (试验载荷—轴向应变 )。该装置体积小、可移动性强 ,且能一机多用。文章详细阐述该装置机械结构、电路和系统软件的设计等     

Transient Green’s Tensor for a Layered Solid Half-Space With Different Interface Conditions

Pulsed ultrasonic techniques can be and have been used to examine the interface conditions of a bonded structure. To provide a theoretical basis for such testing techniques we model the structure as a layer on top of a half-space, both of different elastic properties, with various interface bonding conditions. The exact dynamic Green’s tensor for such a structure is explicitly derived from the three-dimensional equations of motion. The final solution is a series. Each term of the series corresponds to a successive arrival of a “generalized ray” and each is a definite line integral along a fixed path which can be easily computed numerically. Willis’ method is used in the derivation. A new scheme of automatic generation of the arrivals and ray paths using combinatorial analysis, along with the summation of the corresponding products of reflection coefficients is presented. A FORTRAN code is developed for computation of the Green’s tensor when both the source and the detector are located on the top surface. The Green’s tensor is then used to simulate displacements due to pulsed ultrasonic point sources of known time waveform. Results show that the interface bonding conditions have a great influence on the transient displacements. For example, when the interface bonding conditions vary, some of the first few head waves and regular reflected rays change polarities and amplitudes. This phenomenon can be used to infer the quality of the interface bond of materials in ultrasonic nondestructive evaluation. In addition the results are useful in the study of acoustic microscopy probes, coatings, and geo-exploration.     

CAD8903机芯的视频音频转换电路设计

本文概要介绍了CAD 8903机芯采用国产集成电路CD7680,CD74211,DG4053实现音频、视频切换功能的电路,并对CD7680中音频信号处理电路的特殊用法进行了说明。