用TL16C550C芯片实现DSP与PC机的串行通信

采用TI公司的通用异步接收发送设备(UART)芯片完成数字信号处理器(DSP)与PC机之间的串行通信,可以避免常规的对DSP的多通道缓冲串口(MCBSP)复杂的软件编程模拟,不仅编程简单,传输能力强,而且实时性好,可靠性高.文中简单介绍了一种UART芯片TL16C550C,并给出了它与TMS320VC5402连接的硬件电路以及软件编程方法.     

基于网格的电信计费系统构架的研究

电信计费是电信运营商的核心业务,传统的电信计费系统存在诸多问题,对此,本文讨论了网格技术在电信计费中的应用研究现状,分析了研究的必要性,提出了一个基于网格的电信计费构架,对构架各层功能进行了论述,最后对构架的优点进行了总结,能够为解决电信计费存在的问题提供新的方法.     

呼伦贝尔市双向HFC网络系统实现方案

在充分利用呼伦贝尔市广电网络分公司原有HFC网络设备的基础上增加回传功能模块，实现HFC网络双向传输功能。在HFC网上建立基于DOCSIS2．0的CM数据传输系统，实现HFC网络中视频、语音、数据等业务的融合。重点阐述CM系统中数据和语音业务的实现过程，包括物理链路的建立、媒质访问控制子层（MAC）的建立及传输汇聚子层（TC）的建立。     

EMS: Efficient mobile sink scheduling in wireless sensor networks

Sink scheduling, in the form of scheduling multiple sinks among the available sink sites to relieve the level of traffic burden, is shown to be a promising scheme in wireless sensor networks (WSNs). However, the problem of maximizing the network lifetime via sink scheduling remains quite a challenge since routing issues are tightly coupled. Previous approaches on this topic either suffer from poor performance due to a lack of joint considerations, or are based on relaxed constraints. Therefore, in this paper, we aim to fill in the research blanks. First, we develop a novel notation Placement Pattern (PP) to bound time-varying routes with the placement of sinks. This bounding technique transforms the problem from time domain into pattern domain, and thus, significantly decreases the problem complexity. Then, we formulate this optimization in a pattern-based way and create an efficient Column Generation (CG) based approach to solve it. Simulations not only demonstrate the efficiency of the proposed algorithm but also substantiate the importance of sink mobility for energy-constrained WSNs.     

CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixing

In this paper, we report for the first time a novel dual metal gate (MG) integration process for gate-first CMOS platform by utilizing the intermixing (InM) of laminated ultra-thin metal layers during high-temperature annealing at 1000 °C. In this process, an ultra-thin (2 nm) TaN film is first deposited on gate dielectric as a buffer layer. Preferable laminated metal stacks for NMOS and PMOS are then formed on a same wafer through a selective wet-etching process in which the gate dielectric is protected by the TaN buffer layer. Dual work function for CMOS can finally be achieved by the intermixing of the laminated metal films during the S/D activation annealing. To demonstrate this process, prototype metal stacks of TaN/Tb/TaN (NMOS) and TaN/Ti/HfN (PMOS) has been integrated on a single wafer, with WF of 4.15 and 4.72 eV achieved, respectively. Threshold voltage (V_th) adjustment and transistor characteristics on high-k HfTaON dielectric are also studied.     

基于神经网络的油罐故障诊断系统的设计

针对加油站油罐故障难以判断的问题,提出了油罐故障诊断系统的研究方案,运用神经网络的方法,建立了油罐故障诊断系统模型,解决了油罐故障实时诊断的问题。     

含B闪锌矿三元系半导体BxIn1-xP和BxGa1-xP带隙理论预测

利用第一性原理计算方法,用广义梯度近似 (GGA) 处理电子之间的交换关联能,计算了BxIn1-xP,BxGa1-xP的带隙结构.BxIn1-xP的带隙弯曲参数b _Eg (Γ)=4.32eV,b_Eg(X) =1.8eV,它从直接带隙转变为间接带隙时B的含量为0.47;在小量B的掺入下,可使BxIn1-xP的带隙变小,在x=0.15时带隙达到最小值1.33eV.BxGa1-xP的带隙弯曲参数b_Eg(Γ)=1.37eV,b _Eg(X)=2.46eV,在整个组分内是间接带隙.BxIn1-x-P,BxGa1-xP有较大的带隙弯曲参数,是由于组成它们的二元系之间存在较大的晶格失配.     

Analysis and application of new quasi-network characteristics of nonuniform mesh in FDTD simulation

The equation of computing the reflection coefficient between two meshes of different sizes is derived. Using the equation, quasi-network characteristics of nonuniform mesh for the finite-difference time-domain technique is found and analyzed. The so-called mesh network (MN) here is a kind of structure composed of the sections of mesh in cascade. The cell sizes of these sections change regularly. By means of choosing the number of mesh sections, length of each section, and cell sizes, some novel network characteristics are obtained, which can be used to match the reflecting wave of nonuniform mesh or improve the transmitted characteristics for a mesh wave to travel along the nonuniform mesh. Formulas for analyzing the MN are given. The characteristics are realized in both one- and three-dimensional cases. The applications and advantages of the MN are shown by computing three different structures, i.e., microstrip-gap capacitor, parallel-coupling filter, and microstrip slot-line transformer.     

1.06μm大功率连续半导体激光器

利用金属有机化学气相淀积(MOCVD)技术,生长了InGaAs/AlGaAs分别限制压应变双量子阱和单量子阱两种材料结构,通过对不同腔长单管激光器的LIV测试获得内部参数,对单、双阱两种材料结构器件参数进行对比分析,确定了单量子阱结构作为1.06μm大功率半导体激光器的材料结构。通过研究单管激光器的电光转换效率与腔长、注入电流的关系,获得了最高达到57.5%的电光转换效率。对1mm腔长单管激光器进行了大电流高温加速老化测试,结果显示研制出的单管激光器室温下在1.5A工作电流下寿命远大于104h。     

EPON网络承载“我的e家”方案研究

本文深人分析了EPON网络的建设模式,研究了"我的e家"业务对宽带接入网的要求以及"我的e家"业务在EPON网络各种组网模式中的承载方案,并对EPON设备提出了新的技术要求.以实质性地推动中国电信"光进铜退"的发展.