Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-/spl mu/m SiGe BiCMOS process

This paper proposes a novel low-leakage BiCMOS deep-trench (DT) diode in a 0.18-/spl mu/m silicon germanium (SiGe) BiCMOS process. By means of the DT and an n/sup +/ buried layer in the SiGe BiCMOS process, a parasitic vertical p-n-p bipolar transistor with an open-base configuration is formed in the BiCMOS DT diode. Based on the two-dimensional (2-D) simulation and measured results, the BiCMOS DT diode indeed has the lowest substrate leakage current as compared to the conventional p/sup +//n-well diode even at high temperature conditions, which mainly results from the existence of the parasitic open-base bipolar transistor. Considering the applications of the diode string in electrostatic discharge (ESD) protection circuit designs, the BiCMOS DT diode string also provides a good ESD performance. Owing to the characteristics of the low leakage current and high ESD robustness, it is very convenient for circuit designers to use the BiCMOS DT diode string in their IC designs.     

以3D软件应用为中心的设计管理模式——PDS在配管设计中的应用

由PDS的特点入手,结合工程实践的应用情况,阐明了3D软件可以更广泛的应用于配管的设计中,强调了以3D模型为中心开展设计和管理的新模式.     

Effects of a K+ATP channel opener, lemakalim, on systemic, coronary and regional vascular dynamics in conscious dogs: comparison with nifedipine, adenosine, nitroglycerin and acetylcholine

The systemic, coronary and regional vascular responses to the K+ATP channel opener lemakalim were compared to other potent vasodilators (i.e., nifedipine, adenosine, nitroglycerin and acetylcholine). Experiments were performed in 12 conscious dogs 2 to 4 weeks after implantation of aortic catheters and flow probes on the ascending aorta, left circumflex coronary, celiac, mesenteric, renal and iliac arteries, and solid-state miniature pressure gauges in the left ventricular cavity. Dose-response curves induced by bolus injection (i.v.) were examined. For doses that reduced total peripheral resistance by 22%, lemakalim reduced celiac (-28 +/- 2%), mesenteric (-24 +/- 3%), renal (-17 +/- 3%) and iliac (-18 +/- 3%) vascular resistances (i.e., by amounts similar to those observed with the other vasodilators, except for adenosine, which increased renal resistance). At these doses, lemakalim induced a greater decrease (-52 +/- 3%) (P < .05) in coronary resistance, as compared with nifedipine (-35 +/- 3%), adenosine (-38 +/- 3%), nitroglycerin (-25 +/- 2%) and acetylcholine (-32 +/- 3%). However, when near maximal vasodilation was elicited, adenosine elicited the greatest (P < .05) decrease in coronary resistance (-81 +/- 1%), as compared with lemakalim (-74 +/- 2%), nifedipine (-67 +/- 2%), nitroglycerin (-63 +/- 2%) and acetylcholine (-72 +/- 1%). Both the time to maximal increases in regional blood flow and the time for recovery in all vascular beds were significantly prolonged for lemakalim compared with the other vasodilators. Thus, the K+ATP channel opener lemakalim dilates the coronary bed out of proportion to other vascular beds, is relatively more potent at lower doses than other vasodilators and exhibits a delayed and more prolonged action in all regional vascular beds.     

心电地图仪中工频干扰的一种滤除方法

在心电地图仪中记录到的体表心电信号往往由于电磁的影响而引进工频干扰．基于体表心电信号中工频干扰的特点，作者提出了一种滤除工频干扰的方法，即就单独—胸导联信号通过提高频谱的分辨率来估计工频干扰的频率；基于最小均方误差准则来估计各导联信号中工频干扰的幅度和相位。文中还给出了该算法的流程图和滤波性能分析。模拟结果表明了该算法的有效性。应用该算法对心电地图仪中的工频干扰进行对消，取得了满意的结果。     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

高质量ZnO薄膜的退火性质研究

在LP－MOCVD中，我们利用Zn(C2H5)2作Zn源，CO2作氧源，在（0002）蓝宝石衬底上成功制备出皮c轴取向高度一致的ZnO薄膜，并对其进行500℃-800℃四个不同温度的退火。利用XRD、吸收谱、光致发光谱和AFM等手段研究了退火对ZnO晶体质量和光学性质的影响。退火后，（0002）ZnO的XRD衍射峰强度显著增强，c轴晶格常数变小，同时（0002）ZnOX射红衍射峰半高宽不断减小表明晶粒逐渐增大，这与AFM观察结果较一致。由透射谱拟合得到的光学带隙退火后变小，PL谱的带边发射则加强，并出现红移，蓝带发光被有效抑制，表明ZnO薄膜的质量得到提高。     

Bandpass filters using periodically loaded combline resonators

A novel combline filter is proposed for cellular‐radio base stations. The Q‐factor is significantly improved. The eigenvalue equation is expressed with the single‐team approximation in the gap region of the combline resonator. A two‐pole combline filter is designed. The calculation, simulation, and experiment results are presented and are in good agreement. © 2005 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2006.     

企业培训中心的六个主要特征

提出企业培训中心的本质特征,并以此为基点阐述企业培训中心的六个主要特征;通过对企业培训中心的使命、培训对象的确定、培养目标、培训内容、组织设置、组织发展的分析,力求揭示企业培训中心组织构建和发展的自身规律。     

平面近场测试系统在天线测试和诊断中的应用

介绍了天线近场测量的基本原理和HD-1型平面近场测试系统,并对近场测量在实际天线测试中的应用情况、发展方向和应用前景等作了简单的描述。     

FCC原料掺入裂解焦油的研究及其机理分析

在催化裂化固定流化床小试装置上，对裂化原料中掺入富含芳烃的添加剂－裂解焦油进行了考察，确定了添加剂的最佳掺入量为1％，与不掺添加剂的裂化原料相比，其汽油产率提高，生焦量和干气产率减少，汽油选择性变好。同时通过对添加剂的原料体系的结构研究，对添加剂影响催化裂化过程的机理进行了探讨。