Low-temperature growth of silicon-boron layer as solid diffusionsource for polysilicon contacted p+-n shallow junction

A new material, Si-B, is proposed as a solid diffusion source for fabrication of poly-Si contacted p⁺-n shallow junctions. The junction depth of the Si-B source diode has been measured and compared with that of a BF₂⁺-implanted poly-Si source diode. It was found that the Si-B source diode had a much shallower junction and was less sensitive to thermal budget than the BF₂⁺ source diode. This was attributed to the smaller surface concentration and diffusivity of boron in the silicon in Si-B source diodes. Regarding electrical characteristics of diodes with a junction depth over 500 Å, a forward ideality factor of better than 1.01 over 8 decades and a reverse-current density lower than 0.5 nA/cm² at -5 V were obtained. As the junction depth shrank to 300 Å, the ideality factor and reverse current density of diodes increased slightly to 1.05 and 1.16 nA/cm², respectively. These results demonstrated that a uniform ultrashallow p⁺-n junction can be obtained by using a thin Si-B layer as a diffusion source     

Analysis and design of combined distributed-feedback/Fabry-Perotstructures for surface-emitting semiconductor lasers

We propose combined distributed-feedback/Fabry-Perot (DFB/FP) structures for surface-emitting semiconductor lasers. The analysis is based on coupled-wave equations modified for surface-emitting lasers. The proposed structures, which exhibit enhanced resonance due to a matching between the gain and field distributions resulting in a reduced threshold compared with simple FP structures, are formed by placing the DFB structure between two DBR mirrors of an FP resonant cavity and introducing phase layers between the DFB region and the mirrors. It was found that the periodic-gain structures are a special case of the combined DFB/FP structures in which the index coupling effect is assumed to be negligible due to a small fill factor or a small refractive-index difference. The effect of complex (gain and index) coupling on the design and the threshold characteristics of the structures is clearly illustrated. Some important design considerations that were neglected in the previous papers are addressed     

高灵敏度热释电摄象管红外电视系统

针对热释电摄象管(PEV)在传统的对称斩波模式下存在的各种问题,设计了一种新的非对称斩波模式PEV红外电视系统.通过提高PEV摄象机的温度响应率R_i和采用高去噪声信号处理系统,大大改善了PEV红外成象系统的性能.     

保安矿柱回采地压监测数据分析

通过现场在马头门附近设立监测站进行长期监测井筒地压，分析了井筒附近地压活动规律，并与数值模拟分析值进行对比验证，从而为安全、高效地提前回收保安矿柱提供有力的保障。     

An automatic method for controlling the centre of gravity of a model

In many applications the location of the centre of gravity of a mechanical part is an important factor that a designer must consider. If it is not in a desired location, a part might not work properly, e.g. unbalanced force might be generated in a rotational part. After a part is modeled, its centre of gravity cannot be altered unless its external shape or internal mass distribution is changed. However, the external shape is usually constrained by other design considerations. In this paper, an algorithm is proposed for controlling the centre of gravity of a hollowed part. Using this algorithm, the location of the centre of gravity of a part is controlled by changing its internal mass distribution.     

A transmit/receive IF chip set for WCDMA mobiles in 0.35 /spl mu/m CMOS

An implementation of the IF section of WCDMA mobile transceivers with a set of two chips fabricated in an inexpensive 0.35-/spl mu/m two-poly three-metal CMOS process is presented. The transmit/receive chip set integrates quadrature modulators and demodulators, wide dynamic range automatic gain control (AGC) amplifiers, with linear-in-decibel gain control, and associated circuitry. This paper describes the problems encountered and the solutions envisaged to meet stringent specifications, with process and temperature variations, thus overcoming the limitations of CMOS devices, while operating at frequencies in the range of 100 MHz-1 GHz. Detailed measurement results corroborating successful application of the new techniques are reported. A receive AGC dynamic range of 73 dB with linearity error of less than /spl plusmn/2 dB and spread of less than 5 dB for a temperature range of -30/spl deg/C to +85/spl deg/C in the gain control characteristic has been measured. The modulator measurement shows a carrier suppression of 35 dB and sideband/third harmonic suppression of over 46 dB. The core die area of each chip is 1.5 mm/sup 2/.     

应用管网式水力喷射泵延长垦西油田油井免修期

水力喷射泵采油是 2 0世纪 90年代初研制成功的一种采油新工艺 ,1994年通过ISO90 0 1质量体系认证 ,主要适用于稠油井、出砂严重及偏磨、腐蚀严重的油井。 1998年 3月开始在垦西油田K71断块实施该工艺 ,目前有管网式水力喷射泵井 2 7口 ,与常规机械采油相比 ,垦西油田油井免修期由 110d延长到 35 0d左右。介绍了管网式水利喷射泵采油工艺及其在垦西油田的实施效果。     

催化裂化装置反应再生系统优化改造

重点介绍了呼和浩特石油化工公司重油催化裂化装置反应再生系统优化改造的目的、内容及运用的新技术;着重从物料平衡、原料及产品性质、催化剂性质、装置能耗、操作参数等方面与改造前进行了对比。装置改造后,在原料明显变重,催化剂单耗明显降低的情况下,生焦率下降了0.13个百分点,轻质油收率提高了3.54个百分点;汽油诱导期较改造前延长了140min,烯烃体积分数降低了1.9个百分点;柴油十六烷值比改造前提高了4个单位;装置能耗较改造前下降了906MJ/t,年创经济效益1030.9×10~4RMB￥。     

机电一体化技术在综合采煤设备中的应用与发展

介绍了机电一体化技术在国内外煤矿井下综采设备中的应用，并论述了机电一体化技术发展与相关技术的研究。