Multiple layer design for mass data transmission against channel congestion in IoT

Internet of Things (IoT) is well studied from many aspects; however, data transmission in a large‐scale constructed IoT network is still an open topic. In this paper, the problems of channel congestion caused by mass data transmission are discussed respectively from different perspectives. Then, a multiple layer solution is proposed, pointing to each layer including data processing architecture, data dimension reduction, data abandon protocol, and spectrum sharing. In the architecture layer, a combined scheme with cloud computing and sea computing is introduced. Context awareness and granular computing is exploited to implement the data dimension reduction. And cognitive protocol is involved with type of service, which drops certain data to guarantee the entire network connectivity. Then, a principal–agent theory based two‐step game model is proposed with the consideration of cooperation and price coefficient, which affect the secondary user's choice and primary user's profit. Some incomplete information is assumed as random variables so that certainty equivalent is introduced in the model. A simple scenario shows how the data dimension reduction works and how simulations for data abandon protocol and spectrum sharing test the two parts, respectively. Copyright © 2012 John Wiley & Sons, Ltd.     

Self‐Healing,Flexible, and Tailorable Triboelectric Nanogenerators for Self‐Powered Sensors based on Thermal Effect of Infrared Radiation

Self‐healing triboelectric nanogenerators (TENGs) with flexibility, robustness, and conformability are highly desirable for promising flexible and wearable devices, which can serve as a durable, stable, and renewable power supply, as well as a self‐powered sensor. Herein, an entirely self‐healing, flexible, and tailorable TENG is designed as a wearable sensor to monitor human motion, with infrared radiation from skin to promote self‐healing after being broken based on thermal effect of infrared radiation. Human skin is a natural infrared radiation emitter, providing favorable conditions for the device to function efficiently. The reversible imine bonds and quadruple hydrogen bonding (UPy) moieties are introduced into polymer networks to construct self‐healable electrification layer. UPy‐functionalized multiwalled carbon nanotubes are further incorporated into healable polymer to obtain conductive nanocomposite. Driven by the dynamic bonds, the designed and synthesized materials show excellent intrinsic self‐healing and shape‐tailorable features. Moreover, there is a robust interface bonding in the TENG devices due to the similar healable networks between electrification layer and electrode. The output electric performances of the self‐healable TENG devices can almost restore their original state when the damage of the devices occurs. This work presents a novel strategy for flexible devices, contributing to future sustainable energy and wearable electronics.     

Sub‐Millimeter‐Scale Monolayer p‐Type H‐Phase VS2

2D H‐phase vanadium disulfide (VS₂) is expected to exhibit tunable semiconductor properties as compared with its metallic T‐phase structure, and thus is of promise for future electronic applications. However, to date such 2D H‐phase VS₂ nanostructures have not been realized in experiment likely due to the polymorphs of vanadium sulfides and thermodynamic instability of H‐phase VS₂. Preparation of H‐phase VS₂ monolayer with lateral size up to 250 µm, as a new member in the 2D transition metal dichalcogenides (TMDs) family, is reported. A unique growth environment is built by introducing the molten salt‐mediated precursor system as well as the epitaxial mica growth platform, which successfully overcomes the aforementioned growth challenges and enables the evolution of 2D H‐phase structure of VS₂. The honeycomb‐like structure of H‐phase VS₂ with broken inversion symmetry is confirmed by spherical aberration‐corrected scanning transmission electron microscopy and second harmonic generation characterization. The phase structure is found to be ultra‐stable up to 500 K. The field‐effect device study further demonstrates the p‐type semiconducting nature of the 2D H‐phase VS₂. The study introduces a new phase‐stable 2D TMDs materials with potential features for future electronic devices.     

基于DMD成像系统的红外小目标仿真

在分析红外成像仿真系统研究现状的基础上,研究了典型红外小目标的模型和移 动式滤波跟踪算法。依据飞行器内部构造及工艺材料,并结合空气动力学、物理学以及热辐射的相关理论, 从蒙皮辐射、尾喷焰等方面建立了飞行器的红外辐射模型。针对数字微镜阵列(Digital Mirror Device, DMD) 系统的特点,对模型进行了简化,提高了图像生成速度。最后利用基于数字微镜阵列的成像仿真系统平台 对模型和算法进行了实验验证。实验结果表明,该方法具有图像清晰、信噪比高、生成速度快、管道存储时间小以及 跟踪稳定等特点。     

Zero Thermal Expansion Achieved by an Electrolytic Hydriding Method in La(Fe,Si)13 Compounds

The La(Fe,Si)₁₃‐based compounds have been recently developed as promising negative thermal expansion (NTE) materials by elemental substitution, which show large, isotropic and nonhysteretic NTE properties as well as relatively high electrical and thermal conductivities. In this paper, the La(Fe,Si)₁₃ hydrides are prepared by a novel electrolytic hydriding method. Furthermore, the thermal expansion and magnetic properties of La(Fe,Si)₁₃ hydrides are investigated by the variable‐temperature X‐ray diffraction and physical property measurement system. Fascinatingly, it is found that room‐temperature NTE properties and zero thermal expansion (ZTE) properties with broad operation‐temperature window (20–275 K) have been achieved after electrolytic hydriding. The further magnetic properties combined with theoretical analysis reveal that the improvements of NTE and ZTE properties in the La(Fe,Si)₁₃ hydrides are ascribed to the variations of magnetic exchange couplings after hydrogenation. The present results highlight the potential applications of La(Fe,Si)₁₃ hydrides with room‐temperature NTE and broad operation‐temperature window ZTE properties.     

Ultra‐Lightweight and Highly Adaptive All‐Carbon Elastic Conductors with Stable Electrical Resistance

The rapid development of wearable electronics needs flexible conductive materials that have stable electrical properties, good mechanical reliability, and broad environmental tolerance. Herein, ultralow‐density all‐carbon conductors that show excellent elasticity and high electrical stability when subjected to bending, stretching, and compression at high strains, which are superior to previously reported elastic conductors, are demonstrated. These all‐carbon conductors are fabricated from carbon nanotube forms, with their nanotube joints being selectively welded by amorphous carbon. The joint‐welded foams have a robust 3D nanotube network with fixed nodes and mobile nanotube segments, and thus have excellent electrical and mechanical stabilities. They can readily scale up, presenting a new type of nonmetal elastic conductor for many possible applications.     

Achieving High‐Performance Nondoped OLEDs with Extremely Small Efficiency Roll‐Off by Combining Aggregation‐Induced Emission and Thermally Activated Delayed Fluorescence

Luminescent materials with thermally activated delayed fluorescence (TADF) can harvest singlet and triplet excitons to afford high electroluminescence (EL) efficiencies for organic light‐emitting diodes (OLEDs). However, TADF emitters generally have to be dispersed into host matrices to suppress emission quenching and/or exciton annihilation, and most doped OLEDs of TADF emitters encounter a thorny problem of swift efficiency roll‐off as luminance increases. To address this issue, in this study, a new tailor‐made luminogen (dibenzothiophene‐benzoyl‐9,9‐dimethyl‐9,10‐dihydroacridine, DBT‐BZ‐DMAC) with an unsymmetrical structure is synthesized and investigated by crystallography, theoretical calculation, spectroscopies, etc. It shows aggregation‐induced emission, prominent TADF, and interesting mechanoluminescence property. Doped OLEDs of DBT‐BZ‐DMAC show high peak current and external quantum efficiencies of up to 51.7 cd A^?1 and 17.9%, respectively, but the efficiency roll‐off is large at high luminance. High‐performance nondoped OLED is also achieved with neat film of DBT‐BZ‐DMAC, providing excellent maxima EL efficiencies of 43.3 cd A^?1 and 14.2%, negligible current efficiency roll‐off of 0.46%, and external quantum efficiency roll‐off approaching null from peak values to those at 1000 cd m^?2. To the best of the authors' knowledge, this is one of the most efficient nondoped TADF OLEDs with small efficiency roll‐off reported so far.     

A Charge Reversible Self‐Delivery Chimeric Peptide with Cell Membrane‐Targeting Properties for Enhanced Photodynamic Therapy

The cell membrane is the most important protective barrier in living cells and cell membrane targeted therapy may be a high‐performance therapeutic modality for tumor treatment. Here, a novel charge reversible self‐delivery chimeric peptide C₁₆–PRP–DMA is developed for long‐term cell membrane targeted photodynamic therapy (PDT). The self‐assembled C₁₆–PRP–DMA nanoparticles can effectively target to tumor by enhanced permeability and retention effect without additional carriers. After undergoing charge reverse in acidic tumor microenvironment, C₁₆–PRP–DMA inserts into the tumor cell membrane with a long retention time of more than 14 h, which is very helpful for in vivo applications. It is found that under light irradiation, the reactive oxygen species generated by the inserted C₁₆–PRP–DMA would directly disrupt cell membrane and rapidly induce cell necrosis, which remarkably increases the PDT effect in vitro and in vivo. This novel self‐delivery chimeric peptide with a long‐term cell membrane targeting property provides a new prospect for effective PDT of cancer.     

Field‐Induced n‐Doping of Black Phosphorus for CMOS Compatible 2D Logic Electronics with High Electron Mobility

Black phosphorus (BP) has been considered as a promising two‐dimensional (2D) semiconductor beyond graphene owning to its tunable direct bandgap and high carrier mobility. However, the hole‐transport‐dominated characteristic limits the application of BP in versatile electronics. Here, we report a stable and complementary metal oxide semiconductor (COMS) compatible electron doping method for BP, which is realized with the strong field‐induced effect from the K⁺ center of the silicon nitride (Si_xN_y). An obvious change from pristine p‐type BP to n type is observed after the deposit of the Si_xN_y on the BP surface. This electron doping can be kept stable for over 1 month and capable of improving the electron mobility of BP towards as high as ~176 cm² V^–1 s^–1. Moreover, high‐performance in‐plane BP p‐n diode and further logic inverter were realized by utilizing the n‐doping approach. The BP p‐n diode exhibits a high rectifying ratio of ~10⁴. And, a successful transfer of the output voltage from “High” to “Low” with very few voltage loss at various working frequencies were also demonstrated with the constructed BP inverter. Our findings paves the way for the success of COMS compatible technique for BP‐based nanoelectronics.     

Photoluminescent Arrays of Nanopatterned Monolayer MoS2

Monolayer 2D MoS₂ grown by chemical vapor deposition is nanopatterned into nanodots, nanorods, and hexagonal nanomesh using block copolymer (BCP) lithography. The detailed atomic structure and nanoscale geometry of the nanopatterned MoS₂ show features down to 4 nm with nonfaceted etching profiles defined by the BCP mask. Atomic resolution annular dark field scanning transmission electron microscopy reveals the nanopatterned MoS₂ has minimal large‐scale crystalline defects and enables the edge density to be measured for each nanoscale pattern geometry. Photoluminescence spectroscopy of nanodots, nanorods, and nanomesh areas shows strain‐dependent spectral shifts up to 15 nm, as well as reduction in the PL efficiency as the edge density increases. Raman spectroscopy shows mode stiffening, confirming the release of strain when it is nanopatterned by BCP lithography. These results show that small nanodots (≈19 nm) of MoS₂ 2D monolayers still exhibit strong direct band gap photoluminescence (PL), but have PL quenching compared to pristine material from the edge states. This information provides important insights into the structure–PL property correlations of sub‐20 nm MoS₂ structures that have potential in future applications of 2D electronics, optoelectronics, and photonics.