基于热敏电阻的数字体温计

利用MSP430系列单片机集成的段式液晶驱动模块和16位Σ-Δ模数转换器,结合高温度系数的NTC热敏电阻,设计了一种高精度低功耗便携式数字体温计。详细介绍了该系统原理框架,NTC热敏电阻特性,AD温度采样原理,16位Σ-Δ模数转换器和软件的实现。在实际应用中以高精度、低功耗、测量时间短、方便携带等优点替代传统的水银体温计。     

Electrical characteristics of low temperature-Al0.3Ga0.7As

In this work, we present electrical characterizations of n⁺ GaAs/low temperature (LT)-Al_0.3Ga_0.7As/n⁺ GaAs resistor structures in which the LT layers are grown at nominal substrate temperatures of 250 and 300°C. The resistivity and V_tfl parameters of these LT-Al_0.3Ga_0.7As layers are compared with those of LT-GaAs and Al_0.3Ga_0.7As grown at a normal growth temperature of 720°C. Low-temperature Al_0.3Ga_0.7As layers exhibit resistivities as high as 10¹² ohm-cm, nearly four orders of magnitude higher than that of LT-GaAs, and V_tfl values as high as 45 V, over twice that of LT-GaAs. We also find that the LT-Al_0.3Ga_0.7As materials grown at 250 and 300°C appear to show opposite and contradictory trends with respect to resistivity and V_tfl. We propose that this result can be explained by residual hopping conduction in the 250°C material. Temperature dependent conductivity measurements confirm the presence of a hopping mechanism in LT-Al_0.3Ga_0.7As grown at 250°C and yield activation energies of 0.77 and 0.95 eV for LT-GaAs and LT-Al_0.3Ga_0.7As, respectively.     

环形孔径对部分相干光光谱的影响

本文推导了部分相干光在经过环形孔径之后,远场轴上点的光谱S(ω)与环形孔径处光的光谱S~(0)(ω)之间的关系。数值计算结果表明,S(ω)不仅依赖于S~(0)(ω),而且还与环形孔径处光的相干性以及环形孔径的参数有关。     

人工神经网络处理光纤阵列传感信号的原理,结构及其仿真结果

人工神经网络技术作为机敏材料与结构的关键技术之一，在国外已受到人们的关注。本文探索将人工神经网络技术应用于光纤阵列传感信号处理中的原理、结构及应用于材料与结构损伤估计的方法。给出了适应于此，已用程序实现的两种神经网络模型的仿真处理结果。     

Recessed-gate AlGaAs-InGaAs-GaAs pseudomorphic HEMT withSi-planar-doped etch stop layer

An improved slot etch technique based on an Si planar doped layer has been applied to gate recessing in the fabrication of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (HEMTs). The devices exhibited comparable g_m with much better breakdown and leakage behaviour than conventional pseudomorphic HEMT devices     

Design optimization of ARROW-type diode lasers

Antiresonant reflecting optical wavelength (ARROW)-type diode lasers have been optimized for high-power, single-spatial-mode operation. Calculated modal behavior predicts strong intermodal discrimination with low loss for the fundamental ARROW mode. Single-lobe far-field operation is obtained only when the high-index reflecting (antiresonant) cladding layers correspond to an optical thickness of λ₁ (m+3/4), where λ is the lateral (projected) wavelength of the leaky wave in the high-index layers, and m is an integer (m=0, 1,. . .). Experimental results include stable, single-spatial mode operation to 500-mW peak pulsed power and 300-mW CW power at an emission wavelength of 0.98 μm     

光泵用大功率半导体激光器列阵

本文报导工作波长适合于泵浦掺Nd固体激光器的GaAIAs/G&As激光锁相列阵。采用氧化物掩蔽和Zn扩散条形结构工艺,获得了十单元列阵器件。其工作波长为809±5nm,输出功率大于200mW。已用于Nd∶YAG和Nd玻璃激光器的泵浦。     

Simulating process-induced gate oxide damage in circuits

Advanced processing techniques such as plasma etching and ion implantation can damage the gate oxides of MOS devices and thus pose a problem to circuit reliability. In this paper, we present a simulator which predicts oxide failure rates during and after processing and pinpoints strong charging current locations in the layout where changes can be made to improve circuit hot-carrier reliability. We present the models and experimental results used to develop the simulator and demonstrate the usefulness of this simulator     

Interface structure in arsenide/phosphide heterostructun grown by gas-source MBE and low-pressure MOVPE

We have used cross-sectional scanning tunneling microscopy (STM) to study interface structure in arsenide/phosphide heterostructures grown by gas-source molecular beam epitaxy (GSMBE) and by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). High-resolution images of GSMBE samples consisting of GaAs interrupted at 200Å intervals with a 40 s P₂ flux reveal substantial, growth-temperature-dependent incorporation of phosphorus with nanometer-scale lateral variations in interface structure. STM images of InGaAs/InP multiple quantum well structures grown by LP-MOVPE show evidence of interface asymmetry and extensive atomic cross-incorporation at the interfaces. Data obtained by STM have been corroborated by high-resolution x-ray diffraction and reflection high-energy electron diffraction. Together, these studies provide direct information about nanometer-scale grading and lateral nonuniformity of arsenide/phosphide interfaces that can occur under these growth conditions.     

退火对GaAs窗口晶体力学性能的影响

在L EC Ga As晶片中,存在相当大的弹性应变,在高温退火后,晶片的晶格参数的相对变化量不到原生晶片的70 % ,残余应力得以部分释放,从而减小残余应力诱生断裂的可能性,提高了Ga As晶体的断裂模数.原生Ga As晶体加工的样品的断裂模数平均值约为135 MPa,而退火Ga As晶体加工的样品的断裂模数平均值更高,约为15 0 MPa,断裂模数最高值达16 3MPa.