太阳能真空管的发展方向

现在市场上的太阳能真空管如图1所示。Ⅰ型,就是现在普通的全玻璃真空管。其特点为:玻璃管吸收到的太阳热直接传给水,传热热阻很小。但是真空管内有水而带来的缺点:易冻坏,结水污,热效率低。为了使真空管内无水而发展的其他形式,如Ⅱ、Ⅲ、Ⅳ型。Ⅱ型,就是在普通的全玻璃真空管(Ⅰ型)内放置金属热管。其特点为:真空管内无水,玻璃管吸收到的太阳热通过超导的金属热管传给水。但是,由于玻璃管与金属热管之间的传热热阻太大,使玻璃管上的吸热涂层老是处于高温工况下,同时抵消了由于真空管内无水而带来的热效率的提高。Ⅲ型,就是金属吸热体的真…     

Prediction of Fatigue Performance in Aluminum Shape Castings Containing Defects

Fatigue properties of cast aluminum components are controlled by maximum defect size in the material. The larger the maximum defect size, the lower the fatigue strength and life. In the presence of casting defects, crack initiation can be ignored and fatigue life is mainly spent in crack propagation. Therefore, fatigue life of aluminum castings can be predicted by long or short crack growth models. The main problem is defining a starting defect size from readily available data, such as twodimensional (2-D) pore size measurements on metallographic sections. In this article, an extremevalue statistics (EVS) method was used to estimate the maximum defect size in 319 castings from conventional metallographic data. The maximum defect size predicted by EVS agrees quite well with the initiation defect sizes measured from fracture surfaces, and the predicted fatigue life is in reasonable agreement with the experimental data.     

高碳铬铁电炉高基质干式打结料的研究

通过对组成打结料成分特性的研究，提出以优质原料生产的MgO-CaO-Fe2O3系合成砂为骨料，用MgO〉97％，粒度〈0．088mm烧结镁砂做细粉，适当添加超微粉等工艺措施，制成适当高碳铬铁电炉炉底用的高基质打结料，通过调控基质成分，实现材料相和固相的复合烧结。     

Optimal Conditions for Preparing Ultra-Fine CeO2 Powders in A Submerged Circulative Impinging Stream Reactor

Cerium carbonate powders were produced in a submerged circulation impinging stream reactor (SCISR) from Ce(NO3)3·6H2O. NH4HCO3 was used as a precipitant in the reaction. Cerium carbonate powders were roasted to produce ultra-fine cerium dioxide (CeO2) powders. The optimal conditions of such production process were obtained by orthogonal and one-factor experiments. The results showed that ultra-fine and narrowly distributed cerium carbonate powders were produced under the optimal flowing conditions. The concentrations of Ce(NO3)3 and NH4HCO3 solutions were 0.25 and 0.3 mol·L-1, respectively. The concentration of PEG4000 added in these two solutions was 4 g·L-1. The stirring ratio, reaction temperature, feeding time, solution pH, reaction time and digestion time were 900 r·min-1, 80 ℃, 20 min, 5～6, 5 min and 1 h, respectively. The final product, CeO2 powders, was obtained by roasting the produced cerium carbonate in air for 3 h at 500 ℃. The finally produced CeO2 powders were torispherical particles with a narrow size distribution of 0.8～2.5 μm. The crystal structure of CeO2 powders belonged to cubic crystal system and its space point group was O5H-FM3M. Under optimal conditions, powders produced by SCISR were finer and more narrowly distributed than that by Stirred Tank Reactor (STR).     

军械调运方案优化算法的设计与仿真

军械调运问题的数学模型和手工算法过去已有研究,但是当问题较为复杂时,手工算法就要花费大量时间而且准确性也难以保证。针对这一缺陷,本文在已有的数学模型和手工算法的基础上,设计了一种可以用计算机实现的基于递归的算法来寻求军械紧急调运问题的最优方案,并使用面向对象的java语言将算法实现。     

Flow time measurements for underfills in flip-chip packaging

Flow time is a key material property for underfill materials in flip-chip applications. In this paper, we will discuss how to use flow time testing for underfill flow evaluation and material screening. The flow time of several underfills was measured at elevated temperatures using test pieces made from glass microscope slides. The material properties impacting underfill flow, such as viscosity, contact angle, and surface tension, were also experimentally measured and used to calculate estimated flow times using the Washburn equation. Empirical and calculated flow times were compared. The effects of channel width and flow distance on flow time were also studied. Additionally, the effect of a tilted stage on flow time, epoxy tongue, and void formation was evaluated.     

High-breakdown-voltage AlSbAs/InAs n-channel field-effecttransistors

InAs channel field-effect transistors of 1-μm gate length were grown by molecular beam epitaxy and observed to operate at channel electric fields (20 kV/cm) higher than previously demonstrated and several times greater than the threshold for impact ionization in bulk InAs. Voltage gains on the order of 10 were observed with transconductances as high as 414 mS/mm and output conductances as low as 33 mS/mm. These voltage gains are comparable to those of GaAs-based devices and are the highest observed for InAs channel devices. The results demonstrate the potential for practical room-temperature operation of InAs FETs     

Matching score properties between range profiles of high-resolutionradar targets

In this paper, how the statistical properties of the matching scores are affected by the carrier frequency, the aspect variation, the range resolution, and the target complexity are studied. The statistical parameters (mean and standard deviation) of the matching scores among range profiles of independent objects are derived, and their values are used as references to determine the threshold values for target identification. It is found that the range profile obtained at a certain carrier frequency can also be used as the feature vector for radars operated at shifted frequencies if the range resolution is fine enough or the target is simple. It is also found that a radar with higher range resolution can tolerate more aspect variation, yielding a significant advantage in saving memory space for establishing the data base. The results obtained can have several applications such as target identification, data association in multiple target tracking, and target direction determination when widely-spaced high-resolution radars are employed