低气压下制备金刚石薄膜的研究

利用我们自己研制的磁约束直流等离子体设备，在低气压（＜１Ｔｏｒｒ）下。用Ａｒ＋Ｈ２＋ＣＨ４的混合气体在基片上进行了沉积金刚石薄膜的工艺研究。利用扫描电镜和拉曼光谱对不同的进气方式所制备出的金刚石薄膜的形貌和质量进行了比较。结果表明。当在基片表面附近引入碳源气体和大约５０％氢气时，可以大大提高薄膜质量。     

同轴环形螺旋谐振腔设计分析

提出了一种适用于同轴环形放电结构气体激光器的环形螺旋谐振腔,并给出了理论分析。该谐振腔由一螺旋面反射镜和一球面反射镜构成,可充分提取激活区的能量并输出单束激光。该结构易于实现同轴环形放电激活区中的功率萃取。     

WDM光传输系统2.5Gbit／s光发送模块研究

本文介绍了作者设计，调试的２．５Ｇｂｉｔ／ｓ光发送模块的工作原理、关键技术、典型性能参数，该模块通过控制激光器温度来稳定其中心波长，为波分复用系统的应用提供了具备稳定中心波长特性的光源。     

锥形阀压电薄膜泵的初步研究

提出一种适应高频工作状态的压电薄膜泵结构，实步分析了所采用的锥形阀的工作原理与作用，设计了试验泵结构，加工了样机，通过试验证明了锥形阀的有效性，为进一步的研究打下了基础。     

Fe-B合金激光熔凝形成非晶态机理探讨

本文对激光表面熔区的显微组织进行了热力学和动力分析，提出一个简化的熔池中温度分布的物理模型，分析了非晶态形成过程。用ＣＷＣＯ２激光扫描Ｆｅ—Ｂ合金表面，得到１３０μｍ～２００μｍ厚度的非晶层，并对激光低速扫描时熔区再结晶点阵常数变化的有关数据进行了对比，对激光非晶态形成的条件及有关工艺参数进行了分析和讨论。     

扫描激光雷达的视场角和角分辨率研究

分析了出瞳扫描方式扫描视场角与激光雷达光学系统参数的关系，认为最大扫描视场角比主天线望远镜静态视场角小，在信号过程线性的前提下，根据强度像的瑞利判据提出了扫描激光雷达角分辨率公式建议。对主要结论都进行了实验验证。     

横电磁波传输室的三维FDTD法分析

本文运用时域有限差分（FDTD）法模拟电磁波在TEMcell（横电磁波传输室）中的传输，并对之进行了三维分析，给出了TEMcell中TEM模场的横截面分布及纵向分布；计算了TEM模与高阶模的谐振频率；分析了TEMcell的上限可用频率。此结果对横电波传输室的设计和使用具有重要意义。     

A Gunn-Diode Active Leaky-Wave Frequency Scanning Antenna

A frequency tunable active leaky-wave scanning antenna using Gunn-diode voltage control oscillator (VCO) as source is developed. The frequency tuning controlled by changing either the varactor diode dc bias or the Gunn diode dc bias is demonstrated. The measured scanning angle of active antenna is close to 15 degree as the Gunn VCO frequency tuned from 12.58GHz to 12.98GHz. To excite the first higher order mode of the microstrip leaky-wave antenna is fed asymmetrically. The dominant mode excitation has been successfully suppressed by adding a sequence of covered wire in the middle line of the microstrip leaky wave antenna. This is a prototype of frequency scanning antenna using two terminal device, which can be easily scaled up to millimeter wave frequency region.     

宽带接入网

本文根据国际 ITU-T 对宽带接入网规范的研究,首先介绍宽带接入网的基本概念和业务节点接口,然后分别说明宽带接入网的几种主要功能和协议,它们是传送功能、指配功能、实时管理协调功能、宽带运载连接控制功能。     

Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications

Molecular beam epitaxy has been employed to deposit HgCdTe infrared detector structures on Si(112) substrates with performance at 125K that is equivalent to detectors grown on conventional CdZnTe substrates. The detector structures are grown on Si via CdTe(112)B buffer layers, whose structural properties include x-ray rocking curve full width at half maximum of 63 arc-sec and near-surface etch pit density of 3–5 × 10⁵ cm⁻² for 9 μm thick CdTe films. HgCdTe p⁺-on-n device structures were grown by molecular beam epitaxy (MBE) on both bulk CdZnTe and Si with 125K cutoff wavelengths ranging from 3.5 to 5 μm. External quantum efficiencies of 70%, limited only by reflection loss at the uncoated Si-vacuum interface, were achieved for detectors on Si. The current-voltage (I-V) characteristics of MBE-grown detectors on CdZnTe and Si were found to be equivalent, with reverse breakdown voltages well in excess of 700 mV. The temperature dependences of the I-V characteristics of MBE-grown diodes on CdZnTe and Si were found to be essentially identical and in agreement with a diffusion-limited current model for temperatures down to 110K. The performance of MBE-grown diodes on Si is also equivalent to that of typical liquid phase epitaxy-grown devices on CdZnTe with R₀A products in the 10⁶–10⁷ Θ-cm² range for 3.6 μm cutoff at 125K and R₀A products in the 10⁴–10⁵ Θ-cm² range for 4.7 μm cutoff at 125K.