激光冶炼太阳级硅材料的实验研究

通过实验研究表明，大功率ＣＯ２激光器在廉价硅材料制备中应用的可能性。     

Research on reversible effects and mechanism between the energy-absorbing and energy-reflecting states of chameleon-type building coatings

In the present paper, the reversible effects between energy-absorbing and energy-reflecting states of chameleon-type building coatings were studied through demonstration of the layers’ properties using infrared thermal imaging of the layers when exposed to a sunlamp or temperature measurements of the layers during exposure to sunlight at different ambient temperatures. The reversible transforming mechanism between the energy-absorbing and energy-reflecting states of the chameleon-type building coatings was investigated with IR, Raman and ¹H NMR spectroscopy. The infrared thermal image results showed that when reversibly thermochromic pigments were added to normal white building coatings, the chameleon-type building coatings could absorb energy from the sunlamp below a switching temperature of about 18°C. Absorption of energy from the sunlamp stopped automatically above the switching temperature. The results from exposure to solar radiation showed that when the temperature was below the switching temperature, the chameleon-type building coating could absorb almost the same amount of solar energy as an ordinary coloured coating, and when the temperature was above the switching temperature, the chameleon-type building coating could reflect more solar energy than the ordinary coloured coating. The above results showed that chameleon-type building coatings could contribute to a thermally comfortable building environment. The IR spectroscopy results showed that when the environmental temperature was below the switching temperature of 18°C, the lactone ring of the thermochromic pigment molecule would open and the band of C=O would almost disappear. Raman spectra indicated that the band of C–O in would move to the high wave number range. From ¹H NMR spectra, it could be found that there was some action between the hydrogen of the hydroxyl and the structure of . During the lactone ring opening, the electron in the non-bond orbital would transit to the higher orbital and it could elongate the conjugated bridge, which would produce visible absorption and hence produce an energy-absorbing effect. However, when the environmental temperature was above the switching temperature of 18°C, the lactone ring in the molecule of the thermochromic pigment would close, the transited electron would transit back to the original orbital, hence the visible absorption would disappear, which would make the coating have an energy-reflecting effect.     

新型高k栅介质材料研究进展

随着半导体技术的不断发展，MOSFET（metal-oxide-semiconductor field effect transistor）的特征尺寸不断缩小，栅介质等效氧化物厚度已小至nm数量级。这时电子的直接隧穿效应将非常显著，将严重影响器件的稳定性和可靠性。因此需要寻找新型高k介质材料，能够在保持和增大栅极电容的同时，使介质层仍保持足够的物理厚度来限制隧穿效应的影响。本文综述了研究高k栅介质材料的意义；MOS栅介质的要求；主要新型高k栅介质材料的最新研究动态；展望了高k介质材料今后发展的主要趋势和需要解决的问题。     

Cif2000平台下的核磁共振测井解谱方法研究

介绍了在Cif2000多井解释平台下的核磁共振解谱方法与编程实现。解谱采用加入平滑因子后在特征矩阵的奇异值分解中截去小的非零奇异值的方法，可以在低信噪比时得到稳定的弛豫谱，在油田实际应用中证明了该方法的有效性。根据该方法在Cif2000平台上编制了完整的解谱处理程序，可以直接用于油田的生产实际。     

古洞口水利水电工程泄洪洞工作弧门安装工艺

介绍了古洞口工程泄洪洞工作弧门在特定地形下采用固定卷扬式启闭机和汽车吊配合闸室的预埋件进行闸门安装的施工工艺。对闸门的吊装、调整及焊接工艺的具体措施作了详细分析,解决了该工作弧门在洞内安装的关键施工技术问题。     

第三代短波自动链路建立系统特性分析及仿真实现

分析了第三代短波自动链路建立系统的工作特性及技术特点，并对系统仿真实现的原则及一些细节问题进行了较深入的探讨，同时对仿真实现中涉及的链路质量分析（LQA）算法进行了研究。     

Improvement of RCA transistor using RTA annealing after theformation of interfacial oxide

A polysilicon emitter RCA transistor (an ultra-thin interfacial oxide layer exists between polysilicon and silicon emitter) is presented which can operate at 77 K for the first time. An ultra-thin (1.5 nm) interfacial oxide layer is grown deliberately between polysilicon and silicon emitter using RCA oxidation and excellent device stability is obtained after rapid thermal annealing (RTA) treatment in nitrogen atmosphere. The RCA transistor exhibits good electrical performance at very low temperature for an emitter area of 3 × 8 μm². The maximum toggle frequency of a 1:2 static divider is 1.2 GHz and 732 MHz at 300 K and 77 K, respectively     

用面向对象方法建立人事信息系统

应用先进的面向对象设计方法开发了技术中心人事信息系统，采用E－R数据库建立了数据库逻辑模型，通过VFP语言设计了友好直观的用户使用界面。实践表明，新开发的人事信息系统速度快、容量大，操作性强，对实现信息管理标准化，尤其是人力资源的动态管理和科学决策具有很强的实用性。     

Effect of Synergistic Anticorrosion Treatments on Cycling Stability of Mg-Based Hydrogen Storage Electrode

In this paper, any two of the three anticorrosion agents, that is emulsifier (OP-10), soluble glass (Na2O·nSiO2) and glycerin (C3H8O3), were treated simultaneously on the surface of amorphous (a-) MgNi+5% Ml2Mg17 (Ml denotes the lanthanum-rich mish metal) electrode and the electrolyte. Effect of the synergistic anticorrosion treatment on charging/discharging cycle stability of the electrode was investigated. Contrasted with single treatment method, the cycling stability of the electrodes was further improved. The desirable synergistic anticorrosion method was that the electrode was treated by the soluble glass, and that OP-10 was added into the electrolyte. The cyclic voltammogram (CV) results of the electrode show clearly that the anticorrosion agent can change the electrochemical activity and mechanism of the electrode. The concentration of the anticorrosion agent in the electrolyte treated by the synergistic anticorrosion method was also investigated. The appropriate concentration of the anticorrosion agents in the electrolyte is 0.143%.     

A new polysilicon CMOS self-aligned double-gate TFT technology

In this paper, a new polysilicon CMOS self-aligned double-gate thin-film transistor (SA-DG TFT) technology is proposed and experimentally demonstrated. The self-alignment between the top- and bottom-gate is realized by a backlight exposure technique. The structure has an ultrathin channel region (300 /spl Aring/) and a thick source/drain region. Experimental results show that this technology provides excellent current saturation due to a combination of the effective reduction in the drain field and the full depletion of the ultrathin channel. Moreover, for n-channel devices, the SA-DG TFT has a 4.2 times higher on-current (V/sub gs/=20V) as compared to the conventional single-gate TFT. Whereas for the p-channel devices, the SADG TFT has a 3.6 times higher on-current (V/sub gs/=-20V) compared to the conventional single-gate device.