Fabrication of optical fibre nanowires and their optical and mechanical characterisation

It is demonstrated for the first time that long nanowires with radii as small as 30 nm can be manufactured with a conventional coupler fabrication rig. The temporal deterioration of nanowire optical properties has been studied and correlated with its mechanical behaviour. The original transmission properties have been restored by a post-fabrication treatment.     

平煤集团以人为本全面推动安全工作

介绍了平煤集团围绕以人为本的理念开展的提升理念、创新管理、加大投入和提高员工素质等一系列安全活动，为进一步抓好安全生产打下了坚实基础。     

Ten-user truly asynchronous gigabit OCDMA transmission experiment with a 511-chip SSFBG en/decoder

A ten-user truly asynchronous gigabit coherent-optical-code-division-multiple-access (OCDMA) transmission was experimentally demonstrated without using any timing coordination. The enabling technologies are a record-length 511-chip superstructured-fiber-Bragg-grating (SSFBG) en/decoder and a supercontinuum (SC)-based optical-thresholding technique to significantly suppress the signal interference beat noise as well as the multiple-access-interference (MAI) noise.     

港口起重机风灾事故的防范

介绍了港口起重机所受风害的种类及其设防情况,分析了起重机结构形式与风作用的关系。介绍了上海国际港务(集团)有限公司几种常用的大型起重机防风装置的原理、功效及检测情况。     

Optically tuned superconductive-dielectric resonators with whispering-gallery modes

An analytical method is presented for calculating the resonant frequency andQ-factor of a superconducting dielectric disk resonator operating in millimeter-wave regime with whispering-gallery mode. Resonant frequency shift due to the optical generation of quasi-particles in superconducting film is investigated as a function of photon flux. An optically tunable resonant frequency of about 500 MHz is estimated, and good agreement is found between numerical results and experimental ones.     

High-speed InGaP/GaAs HBTs with a strained InxGa1-xAs base

A self-aligned InGaP/GaAs heterojunction bipolar transistor with a compositionally graded In_xGa_1-xAs base has been demonstrated with f_T=83 GHz and f_max=197 GHz. To our knowledge, these results are the highest reported for both parameters in InGaP/GaAs HBT's. The graded base, which improves electron transport through the base, results in a DC current gain and a cutoff frequency which are 100% and 20% higher, respectively, than that achieved by an identical device with a nongraded base. The high f_max results from a heavily doped base, self-aligned base contacts, and a self-aligned collector etch. These results demonstrate the applicability of InGaP/GaAs HBT's in high-speed microwave applications