Kinetics of AuSn4 migration in lead-free solders

The relatively fast diffusion of Au atoms in eutectic PbSn matrix is considered one of the contributing factors to the Au embrittlement problem. In this study, we further investigated the Au embrittlement problem in high-Sn solders. Experimentally, Sn3.5Ag (wt.%) spheres with 500-μm diameter were soldered over the Au/Ni soldering pads. It was found that some of the AuSn₄ needles that formed after reflow inside the solder migrated back to the solder/pad interface during thermal aging. However, the migration kinetics in high-Sn solders was slower compared to that in eutectic PbSn. The difference in migration kinetics of AuSn₄ in eutectic PbSn and SnAg was ascribed to the difference in the magnitudes of the Au flux and the Ni flux. In eutectic PbSn, the Au flux was much greater than that of the Ni flux, and the Au and Ni flux were in the same order of magnitude in eutectic SnAg. The relative magnitude of the Au and Ni flux changed in eutectic PbSn and SnAg because the homologous temperatures of PbSn and SnAg were different.     

《石油沥青纸胎油毡》国家标准的修订

《石油沥青纸胎油毡》国家标准进行了第三次修订。本文介绍了修订的理由、修订的内容与依据，并与国内外同类产品标准进行了比较。     

Windows XP操作系统的应用技巧

介绍了Windows XP操作系统中一些应用技巧,对提高计算机的整体运行速度和工作稳定性有很大帮助.     

港口起重机风灾事故的防范

介绍了港口起重机所受风害的种类及其设防情况,分析了起重机结构形式与风作用的关系。介绍了上海国际港务(集团)有限公司几种常用的大型起重机防风装置的原理、功效及检测情况。     

High-speed InGaP/GaAs HBTs with a strained InxGa1-xAs base

A self-aligned InGaP/GaAs heterojunction bipolar transistor with a compositionally graded In_xGa_1-xAs base has been demonstrated with f_T=83 GHz and f_max=197 GHz. To our knowledge, these results are the highest reported for both parameters in InGaP/GaAs HBT's. The graded base, which improves electron transport through the base, results in a DC current gain and a cutoff frequency which are 100% and 20% higher, respectively, than that achieved by an identical device with a nongraded base. The high f_max results from a heavily doped base, self-aligned base contacts, and a self-aligned collector etch. These results demonstrate the applicability of InGaP/GaAs HBT's in high-speed microwave applications     

北京谱仪Ⅱ（BESⅡ）顶点探测器数据获取系统

北京谱仪（ＢＥＳⅡ）顶点探测器数据获取系统是北京谱仪数据获取系统的一部分，该子系统电子学采用快总线标准，本文描述了该系统的硬件结构和软件系统，软件包括快总线系统的微码软件和上层控制软件，该系统的死时间为１．５ｎｓ，对ＢＥＳⅡ系统总死时间的贡献小于０．５ｍｓ。