层状催化剂颗粒的优化设计——双组分等温平行反应体系

针对双组分等温平行反应体系,分析讨论了以提高催化剂活性和选择性为目标时催化剂活性组分的最优分布形式(为δ-函数分布),并给出了确定这种反应体系的催化剂的最佳活性层位置的计算方法。结果表明:以提高选择性为目标的最佳活性层位置比以提高活性为目标的要更靠近催化剂核心,实用的最优位置应介于二者之间。最后,本文还研究了反应动力学级数、本性选择性以及内扩散模数(Thiele 模数)等因素对最佳活性层位置的影响。     

Orientation in uniaxially stretched plasticized atactic polystyrene

Summary Fourier transform infrared spectroscopy and birefringence measurements have been used to study the changes in molecular orientation which occur on drawing of plasticized as compared to pure polystyrene (PS) at a temperature T=Tg+Cte. No influence of plasticizers on orientation can be detected whatever the interactions between small molecules and PS chains are. Comparison with previous results obtained on PS-poly(vinylmethyl ether) compatible blends confirms the importance of the macromolecular nature of the second component to enhance the friction coefficient leading to higher level of chain orientation.     

Extended analysis of ground impedance measurement using the fall-of-potential method

An extended analysis of ground impedance measurement using the fall-of-potential method will be presented. An interesting curve that represents the exact locations of the potential probe when the potential and current probes are in different directions is obtained for the first time. Curves representing measurement error are also presented for the case when the potential probe is placed in locations where the correct ground impedance cannot be measured. A similar analysis for ground impedance measurements in multilayer soils is also discussed. The study presented in this paper has extended the theory of the conventional fall-of-potential method and the results obtained can serve as a practical guide for ground impedance measurements made using this method.     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

Comparisons of PWM and one-cycle control for power amplifier with multilevel converter

Based on the concepts of cascade multilevel converters and one-cycle technique, comparisons are conducted to characterize the distortion of the pulsewidth modulation (PWM) and one-cycle control methods that were applied to converters. Simulation results for the different control schemes are obtained in PSIM software initially to see the effect of one-cycle control different from that of PWM control. Through the comparisons, the advantages and disadvantages are identified for each method. The one-cycle scheme is better than PWM control in reducing undesirable harmonics and tracing dynamic waveforms. Simulation and experimental results are also provided to verify the conclusions.     

High voltage (>1kV) and high current gain (32) 4H-SiC power BJTs using Al-free ohmic contact to the base

This letter reports the design and fabrication of 4H-SiC bipolar junction transistors with both high voltage (>1kV) and high dc current gain (/spl beta/=32) at a collector current level of I/sub c/=3.83A (J/sub c/=319 A/cm/sup 2/). An Al-free base ohmic contact has been used which, when compared with BJTs fabricated with Al-based base contact, shows clearly improved blocking voltage. A specific on-resistance of 17 m/spl Omega//spl middot/cm/sup 2/ has been achieved for collector current densities up to 289 A/cm/sup 2/.     

45% efficient silicon photovoltaic cell under monochromatic light

Improvements in the performance of silicon photovoltaic cells for solar applications are adapted for nonsolar photovoltaic applications. Improved monochromatic light efficiencies above 45% are reported including efficiencies close to 40% for relatively long-wavelength (1.064 μm) light as produced by neodymium-doped yttrium-aluminum garnet (Nd:YAG) lasers     

Fuzzy control of nitrogen removal in predenitrification process using ORP.

In order to meet increasingly stringent discharge standards, new applications and control strategies for the sustainable removal of nitrogen from wastewater have to be implemented. In the past years, numerous studies have been carried out dealing with the application of fuzzy logic to improve the control of the activated sludge process. In this paper, fuzzy control strategies of predenitrification systems are presented that could lead to better effluent quality and, in parallel, to a reduction of chemicals consumption. Extensive experimental investigations on lab scale plant studies have shown that there was excellent correlation between nitrate concentration and ORP value at the end of the anoxic zone. Results indicated that ORP could be used as an on-line fuzzy control parameter of nitrate recirculation and external carbon addition. The optimal value of ORP to control nitrate recirculation and external carbon addition was - 86 +/- 2 mV and - 90 +/- 2 mV, respectively. The results obtained with real wastewater also showed the good performance and stability of the fuzzy controllers independently from external disturbances. The integrated control structure of nitrate recirculation and external carbon addition in the predenitrification system is also presented.