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11.
Ultraviolet (UV) disinfection is becoming increasingly popular as an alternative disinfection technology to chlorination in recent years. In this study, we investigated the photoreactivation of Escherichia coli following medium-pressure (MP) UV disinfection of synthetic water by a bench-scale collimated beam apparatus. The UV doses ranged from 1.6 -19.7 mWs/cm2 and photoreactivation was investigated for 6 hours under fluorescent light. In addition, chloramination was applied after UV disinfection to investigate its ability to control photoreactivation. It was found that photoreactivation occurred for all UV doses tested and the increase in bacteria numbers ranged from 0.04 to 1.35 log10. However, the degree of photoreactivation decreased with increased UV doses. Chloramination experiments revealed that the addition of 0.5 mg/l of monochloramine resulted in suppression of photoreactivation for 1 hour only. An increased monochloramine dose of 1 mg/l was found to prevent photoreactivation for the entire duration of the experiment. The results of this study have shown that photoreactivation occurs even after MP UV disinfection, although it is of a lesser extent at higher UV doses. This study has also established that secondary chloramination can effectively suppress and eliminate photoreactivation with a chloramine dose of 1 mg/l. 相似文献
12.
Li Xi Zuoyan Peng Wei Fan Kui Guo Gu Jianmin Muyu Zhao Wu Guoqiang 《Materials Science and Engineering: B》1996,40(2-3):147-152
SrMgxTi1 - xO3 nanocrystals (x = 0.1–0.6) were synthesized by the stearic acid gel method. Powder samples were characterized by X-ray diffraction and X-ray photoelectron (XP) spectroscopy. The results showed that the lattice parameter a and the O 1s XP spectrum changed not only with the Mg content x but also with the grain size d of the samples. The conductivity of a thick film specimen fabricated on an aluminium oxide wafer was investigated in a nitrogen—oxygen atmosphere. 相似文献
13.
This paper describes the application of an expert system for the evaluation of the short-term thermal rating and temperature rise of overhead conductors. The expert system has been developed using a database and Leonardo expert system shell which is gaining popularity among commercial tools for developing expert system applications. The expert system has been found to compare well when evaluated against site tests. A practical application is given to demonstrate the usefulness of the expert system developed 相似文献
14.
A new and simple compensated structure for a vertically installed planar (VIP) 3 dB directional coupler has been studied theoretically as well as experimentally by combining an improved 2-D-general finite difference (2-D-GFD) design procedure with a three-dimensional finite difference time domain (3-D-FDTD) method. The obtained full wave analysis results agree well with the measured ones. The investigations have shown that with this planar compensated structure, a better performance of the VIP coupler in the L-band can be realized by only using the same kind of dielectric substrate for its vertical and horizontal one 相似文献
15.
Xie K. Zhao J.H. Flemish J.R. Burke T. Buchwald W.R. Lorenzo G. Singh H. 《Electron Device Letters, IEEE》1996,17(3):142-144
A 6H-SiC thyristor has been fabricated and characterized. A forward breakover voltage close to 100 V and a pulse switched current density of 5200 A/cm2 have been demonstrated. The thyristor is shown to operate under pulse gate triggering for turn-on and turn-off, with a rise time of 43 ns and a fall time of less than 100 ns. The forward breakover voltage is found to decrease by only 4% when the operating temperature is increased from room temperature to 300°C. It is found that anode ohmic contact resistance dominates the device forward drop at high current densities 相似文献
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17.
介绍了液体通过核孔膜规律方面取得的新认识,包括:(1)纯净液体通过核孔膜的规律;(2)核孔膜测定液体粘滞系数的各种方法;(3)各种物质溶液浓度的核孔膜测定;(4)液相混合物快速分离和化学分离;(5)流体中固体微粒对核孔膜的堵塞及其公式;(6)用核孔膜滤除液中各各斩规律。 相似文献
18.
Chun Hu Ji Zhao Li G.P. Liu P. Worley E. White J. Kjar R. 《Electron Device Letters, IEEE》1995,16(2):61-63
The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process 相似文献
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20.
针对双组分等温平行反应体系,分析讨论了以提高催化剂活性和选择性为目标时催化剂活性组分的最优分布形式(为δ-函数分布),并给出了确定这种反应体系的催化剂的最佳活性层位置的计算方法。结果表明:以提高选择性为目标的最佳活性层位置比以提高活性为目标的要更靠近催化剂核心,实用的最优位置应介于二者之间。最后,本文还研究了反应动力学级数、本性选择性以及内扩散模数(Thiele 模数)等因素对最佳活性层位置的影响。 相似文献