A new method for the solution of three dimensional magnetostatic fields, using a scalar potential

A new method "Equivalent Magnetized Region Solution" based on scalar potential for solving 3D magnetostatic fields is presented. The current distribution is transformed into a region of magnetic dipoles and only one scalar potential is used to calculate the field. A program "CMF3D" has been developed by finite element method, equipped with program "MESH" for subdividing field region into elements. Three examples by the solution are presented and compared with results from analytical method or experiment.     

Effects of grain sizes, shapes, and distribution on minimum sizes of representative volume elements of cubic polycrystals

In the literature the concept of representative volume element (RVE) was introduced to correlate the effective or macroscopic properties of materials with the properties of the microscopic constituents and microscopic structures of the materials. However, to date little quantitative knowledge is available about minimum RVE sizes of various engineering materials. In our recent paper [J. Mech. Phys. Solids 50 (2002) 881], a new definition of minimum RVE size was introduced based on the concept of nominal modulus. Numerical experiments using the finite element method (FEM) were then carried out for determining the minimum RVE sizes of more than 500 cubic polycrystals in the plane stress problem, under the assumption that all grains in a polycrystal have the same square shape––called the simple polycrystal model. The major finding is that the minimum RVE sizes for effective elastic moduli have a roughly linear dependence on crystal anisotropy degrees. The present paper takes into account the effect of grain sizes, shapes, and distribution on the minimum RVE sizes for real cubic polycrystals that are formed by crystallization processes. Similar roughly linear dependence is found again, with the slope about 19% lower than that in the simple polycrystal model. This finding is interesting and useful because numerical experiments on minimum RVE sizes for a large number of crystals are quite time-consuming and the simple polycrystal model reduces significantly the FEM pre- and post-processing works. This should be particularly true in numerically testing minimum RVE sizes for three-dimensional polycrystals and for nonelastic properties in future works. With a maximum relative error 5%, all the polycrystals tested have a minimum RVE size of 16 or less times the grain size.     

MIMO系统中简单的扩展空时块编码分集技术研究

本文提出一种多输入多输出（MIMO）天线系统中简单的扩展空时块编码（SSTBC）分集技术，采用沃尔什码来区分各天线发送数据子流。采用这种方法，在系统带宽一定时，不降低发送信息速率，同时接收机简单。不同天线的发送信息经过了所有收一发天线对之间的空间子信道，获得了所有路径的部分空间分集增益，仿真结果表明，这种增益的获得不受限于接收分集阶数，并且随发射天线的增加以一定的线性关系增加。     

跳时超宽带无线电的性能分析

超宽带脉冲无线电是无线通信领域的一种全新技术,有着广阔的应用前景.它是一种基带无载波短脉冲,不同于使用正弦载波的传统通信系统.本文用满足FCC频谱规划的脉冲--高斯脉冲的五阶导数推导了TH-BPSK方式下的跳时超宽带扩频系统的误码与多址性能,并研究了多径对其性能的影响,比较了TH-BPSK 与TH-PPM系统性能,分析结果表明TH-BPSK的性能(未考虑多径)明显优于TH-PPM,但是TH-PPM抗多径性能优于TH-BPSK.     

Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall

In this letter, we will report on a nitride-based light emitting diode with a mesa sidewall roughening process that increases light output power. The fabricated GaN-based light-emitting diode (LED) wafers were first treated through a photoelectrochemical (PEC) process. The Ga/sub 2/O/sub 3/ layers then formed around the GaN : Si n-type mesa sidewalls and the bottoms mesa etching regions. Selective wet oxidation occurred at the mesa sidewall between the p- and the n-type GaN interface. The light output power of the PEC treated LED was seen to increase by about 82% which was caused by a reduced index reflectance of GaN-Ga/sub 2/O/sub 3/-air layers, by a rough Ga/sub 2/O/sub 3/ surface, by a microroughening of the GaN sidewall surface, and by a selective oxidation step profile of the mesa sidewall that increases the light-extraction efficiency from the mesa sidewall direction. Consequently, this wet PEC treated process is suitable for high powered nitride-based LEDs lighting applications.     

Generalized difference control of parallel streams temperatures

A furnace with multiple parallel passes and multiple burners is commonly seen in petroleum refineries. In order to maintain the furnace running in a safe, stable, and high-efficiency state it is necessary to control the outlet temperatures of the multiple passes to be the same. Due to the fact that the process of the oil heating in such furnace is nonlinear, multivariable, time varying, has serious coupling among passes, has frequent dynamic changes and a large time delay, traditional control methods have trouble in controlling these temperatures, and some advanced control methods, including predictive control, adaptive control, and robust control, are usually too complex for convenient use. In this paper, a control technique, called differences control technique (DsCT), is proposed to distribute the stream flowrates such that the stream temperatures are as identical as possible. The principle of the proposed technique is explained and demonstrated, and the results of its application to a real-life petroleum refinery furnace are also reported. The DsCT technique has the following advantages: it does not need complicated design procedures, the controller structure is simple, it is easy to apply, and it can be canonically applied to furnaces with different number of passes.     

退火对GaAs窗口晶体断裂模数的影响

LEC GaAs晶片经高温退火后，残余应力得以部分释放；从而减小残余应力诱生断裂的可能性，提高了GaAs晶体的断裂模数。原生GaAs晶片加工的样品的断裂模数平均值约为135MPa，经退火的GaAs晶片加工样品的断裂模数平均值更高，约为150MPa，断裂模数最高值达163MPa。