27keV Ar~+斜入射时的Cu-Au合金溅射实验角分布

用27keV Ar~+分别在垂直和倾斜入射情况下,轰击了Cu-Au(30wt％)合金样品,测量了Cu和Au原子的溅射角分布。角分布是用卢瑟福背散射(RBS)技术分析Al捕获膜上的Cu-Au沉积成分而定量得到的。结果表明:(1)在Ar~+倾斜(θ=40°)入射时,Cu原子择优发射,且程度比垂直入射(θ_r=O°)时增强:(2)倾斜入射时,Cu原子的角分布显示出在接近于样品表面法线方向的发射角范围内(θ<45°),发射机率比垂直入射时减小。     

Neue Entwicklungen beim Hohlkatoden‐Gasflusssputtern. New Developments in Hollow Cathode Gas Flow Sputtering

The gas flow sputter technique was invented a few years ago particularly for the inexpensive fabrication of sophisticated ceramic layers. Meanwhile, it has matured and become increasingly powerful. Today it is on the verge of being applied in industrial fabrication processes. The present article gives an overview over the method, its characteristics and the numerous applications.     

辐射敏感综合症--AT病研究进展

共济失调性毛细血管扩张综合症(AT)是一种单基因突变引起的遗传性疾病，表现为高辐射敏感性、进行性神经退变、免疫缺陷、早衰及易患癌症等。本文综述了AT病的研究概况，包括AT临床症状、AT基因的定位、结构与功能、辐射对AT细胞信号传导的影响、AT基因组不稳定性及基因治疗。     

Self-aligning planarization and passivation for integration applications in III-V semiconductor devices

This work reports an easy planarization and passivation approach for the integration of III-V semiconductor devices. Vertically etched III-V semiconductor devices typically require sidewall passivation to suppress leakage currents and planarization of the passivation material for metal interconnection and device integration. It is, however, challenging to planarize all devices at once. This technique offers wafer-scale passivation and planarization that is automatically leveled to the device top in the 1-3-/spl mu/m vicinity surrounding each device. In this method, a dielectric hard mask is used to define the device area. An undercut structure is intentionally created below the hard mask, which is retained during the subsequent polymer spinning and anisotropic polymer etch back. The spin-on polymer that fills in the undercut seals the sidewalls for all the devices across the wafer. After the polymer etch back, the dielectric mask is removed leaving the polymer surrounding each device level with its device top to atomic scale flatness. This integration method is robust and is insensitive to spin-on polymer thickness, polymer etch nonuniformity, and device height difference. It prevents the polymer under the hard mask from etch-induced damage and creates a polymer-free device surface for metallization upon removal of the dielectric mask. We applied this integration technique in fabricating an InP-based photonic switch that consists of a mesa photodiode and a quantum-well waveguide modulator using benzocyclobutene (BCB) polymer. We demonstrated functional integrated photonic switches with high process yield of >90%, high breakdown voltage of >25 V, and low ohmic contact resistance of /spl sim/10 /spl Omega/. To the best of our knowledge, such an integration of a surface-normal photodiode and a lumped electroabsorption modulator with the use of BCB is the first to be implemented on a single substrate.     

Rückgewinnung von Vinylchloridmonomer

The production of the polymer polyvinylchloride (PVC) emits a high amount of waste gas. The recovery of the evaporated base product vinylchoridemonomer (VC) is an important aspect for the economics of the whole process. Membrane and vacuum technology improve the efficiency and the economics of the recovery process considerably.     

SW233 PIN驱动器自动测试系统的研制

介绍了一种集成电路自动测试系统，该系统采用计算机并口作通信接口，用VB6编程，实现了对外围测试电路的控制，用IEEE-488接口卡控制测试仪器，可对SW233电路的36个参数进行自动测试，并将测试结果自动保存在数据库中。该测试系统具有自动化程度高、操作方便、测试结果精确等特点。     

金刚石光电导探测器研制及在软X光测量中的初步应用

介绍了我们自己设计制造的天然Ⅱａ型金刚石光导探测器的结构，原理，制造工艺，实验标定及其在ＩＣＦ实验中软Ｘ光测量中的应用等。