焊接领域中 AutoCAD的二次开发

应用AutoCAD已有的二次开发工具:AutoLISP、块和形定义及菜单开发对CAD在焊接领域应用进行了开发与定制。     

ZnGa2O4纳米晶的制备和结构表征

采用喷射共沉淀法制备了ZnGa2O4 纳米晶，XRD、SEM和TEM结构分析结果表明，喷射共沉淀法制备的ZnGa2O4的纳米晶颗粒细小均匀，形状完整，与化学共沉淀法相比，粒子尺寸明显减小，小于10nm，同时ZnO杂相峰消失，分析了喷射共沉淀法的机理，并对实验结果进行了解释。     

长距离曲线顶管在杭州河坊街工程中的应用

对杭州市重点工程—杭州河坊街长距离曲线顶管进行了总结和介绍 ,可为同类工程借鉴和参考     

变长线扫描选择性激光烧结快速成型工艺的质量和效率优势分析

本文分析变长线扫描选择性激光烧结快速成型工艺对点扫描工艺的质量和效率优势.对二者光学系统结构作分析对比,对焦斑和线束上的功率密度作计算对比.变长线扫描系统采用的扫描方式和聚焦元件使线束宽度小且恒定,线束功率密度与点扫描焦斑的相当.变长线扫描选择性激光烧结快速成型工艺的质量优势是明显的,效率比点扫描工艺提高一倍左右.     

Use of radial forces for fault detection in tapping

A model-based method for fault detection in tapping based on torque and radial forces is proposed. The method allows the identification of faults typical of a tapping operation including axial misalignment, tap runout, tooth breakage both singly and together. The validation experiments have been run on aluminum 356 workpieces for different combinations of process faults. Results have shown that the model predictions are in good agreement with the experimental radial force and torque signals under various fault conditions.     

纳米技术与“纳米涂料”之我见

概述了纳米技术、纳米材料、“纳米涂料”的现状 ,重点讨论了纳米技术在涂料中应用遇到的问题和建议措施 ,对纳米技术的科研方向及其在涂料中应用的发展提出了看法。     

中关村中心区水文地质及工程地质特征

本文全面、系统地分析了北京市中关村中心区的水文地质及工程地质特征 ,为该地区的工程建设提供可靠的地质资料     

Influence of ethyl methacrylate content on the volume‐phase transition of temperature‐sensitive poly[(N‐isopropylacrylamide)‐co‐(ethyl methacrylate)] microgels

A novel series of temperature‐sensitive poly[(N‐isopropylacrylamide)‐co‐(ethyl methacrylate)] (p(NIPAM‐co‐EMA)) microgels was prepared by the surfactant‐free radical polymerization of N‐isopropylacrylamide (NIPAM) with ethyl methacrylate (EMA). The shape, size dispersity and volume‐phase transition behavior of the microgels were investigated by transmission electron microscopy (TEM), ultraviolet–visible (UV–Vis) spectroscopy, dynamic light scattering (DLS) and differential scanning calorimetry (DSC). The transmission electron micrographs and DLS results showed that microgels with narrow distributions were prepared. It was shown from UV–Vis, DLS and DSC measurements that the volume‐phase transition temperature (VPTT) of the p(NIPAM‐co‐EMA) microgels decreased with increasing incorporation of EMA, but the temperature‐sensitivity was impaired when more EMA was incorporated, causing the volume‐phase transition of the microgels to become more continuous. It is noteworthy that incorporation of moderate amounts of EMA could not only lower the VPTT but also enhance the temperature‐sensitivity of the microgels. The reason for this phenomenon could be attributed to changes in the complicated interactions between the various molecules. Copyright © 2004 Society of Chemical Industry     

Delay Analysis of Interacting Queues with an Approximate Model

An approximate model of coupled Markov chains is proposed and analyzed for a slotted ALOHA system with a finite number of buffered nodes. This model differs from earlier ones in that it attempts to capture the interdependence between the nodes. The analytical results lead to a set of equations that, when solved numerically, yield the average packet delay. Comparison between computational and simulation results for a small number of nodes show excellent agreement for most throughput values, except for values near saturation. Numerical comparisons for a two-node system show that a nonsymmetric loading of the system provides better delay-throughput performance than a symmetric one.     

A new polysilicon CMOS self-aligned double-gate TFT technology

In this paper, a new polysilicon CMOS self-aligned double-gate thin-film transistor (SA-DG TFT) technology is proposed and experimentally demonstrated. The self-alignment between the top- and bottom-gate is realized by a backlight exposure technique. The structure has an ultrathin channel region (300 /spl Aring/) and a thick source/drain region. Experimental results show that this technology provides excellent current saturation due to a combination of the effective reduction in the drain field and the full depletion of the ultrathin channel. Moreover, for n-channel devices, the SA-DG TFT has a 4.2 times higher on-current (V/sub gs/=20V) as compared to the conventional single-gate TFT. Whereas for the p-channel devices, the SADG TFT has a 3.6 times higher on-current (V/sub gs/=-20V) compared to the conventional single-gate device.