Interfacial microstructures and properties of aluminum alloys/galvanized low-carbon steel under high-pressure torsion

A new composite processing technology characterized by hot-dip Zn–Al alloy process was developed to achieve a sound metallurgical bonding between Al–7 wt% Si alloy (or pure Al) castings and low-carbon steel inserts, and the variations of microstructure and property of the bonding zone were investigated under high-pressure torsion (HPT). During hot-dipping in a Zn–2.2 wt% Al alloy bath, a thick Al₅Fe₂Zn_x phase layer was formed on the steel surface and retarded the formation of Fe–Zn compound layers, resulting in the formation of a dispersed Al₃FeZn_x phase in zinc coating. During the composite casting process, complex interface reactions were observed for the Al–Fe–Si–Zn (or Al–Fe–Zn) phases formation in the interfacial bonding zone of Al–Si alloy (or Al)/galvanized steel reaction couple. In addition, the results show that the HPT process generates a number of cracks in the Al–Fe phase layers (consisting of Al₅Fe₂ and Al₃Fe phases) of the Al/aluminized steel interface. Unexpectedly, the Al/galvanized steel interface zone shows a good plastic property. Beside the Al/galvanized steel interface zone, the microhardnesses of both the interface zone and substrates increased after the HPT process.     

Realizing enhanced thermoelectric properties in Cu2GeSe3 via a synergistic effect of In and Ag dual-doping

In this work, we propose a modulation doping strategy for simultaneous achievement of low lattice thermal conductivity and high Seebeck coefficient in the Cu₂GeSe₃ compound. The Ag and In dual-doping can optimize the hole carrier concentration to balance electrical conductivity and Seebeck coefficient, achieving a high power factor of ～6.4 μW cm^?1 K^?2 for the Cu₂GeSe₃ compound. The Ag point defect makes a great contribution to blocking the propagation of phonons besides the phonon-phonon Umklapp process, yielding a minimum lattice thermal conductivity of ～0.38 W m^–1 K^–1. Remarkably, a maximum ZT value of ～0.97 at 723 K is achieved for Cu_1.8Ag_0.2Ge_0.95In_0.05Se₃ compound, which is the highest value for the Cu₂GeSe₃-based systems in the temperature range of 323–723 K.     

Microstructure and tensile properties of a Ti-28Ta alloy studied by transmission electron microscopy and digital image correlation

This work presents a study of tensile behavior for a Ti-28 at.%Ta alloy with low modulus and remarkable superelasticity. The Ti-28Ta alloy was firstly fabricated by melting the Ti/Ta powder mixture, followed by hot swaging. The microstructure and tensile behavior were examined by X-ray diffraction, optical microscopy, scanning electron microscopy, transmission electron microscopy and digital image correlation. The results show that the as-fabricated Ti-28Ta alloy is consisted of β with minor nano-sized martensitic α″ and athermal ω. The yield strength and tensile strength of the Ti-28Ta alloy are 549.4 ± 17.0 and 673.8 ± 78.2 MPa, while its fracture elongation and Young's modulus reach to 28.55 ± 2.19% and 89.9 ± 6.1 GPa, respectively. The static and cyclic stress–strain tensile behaviors of the Ti-28Ta alloy were investigated. The results demonstrate that the Ti-28Ta alloy exhibits ductile and transgranular fracture behavior, excellent superelasticity and remarkable ductility.     

树脂吸附铜锌离子的数值模拟

镀金原料氰化亚金钾的生产过程含氰废液中锌（Ⅱ）离子和铜离子（Ⅱ）浓度较高，为探究树脂吸附铜、锌离子的规律，运用Aspen Adsorption数值模拟软件对Φ10 mm×200 mm的树脂固定床吸附过程进行数值模拟，采用一阶迎风差分法作为偏微分方程的离散方法，研究不同条件下的吸附穿透曲线和吸附负荷分布曲线.结果表明:增加进料流量和进料浓度均可提高吸附效率，传质系数（K_S）大于临界值时，吸附穿透曲线不再受其影响，K_S（Zn2+）=4.3×10-3s-1, K_S（Cu2+）=1.00×10-2s-1.      

Synthesis of nanocrystalline molybdenum powder by hydrogen reduction of industrial grade MoO3

In the present work, ultrafine metal Mo powder with a high purity was successfully prepared by one step direct reduction of MoO₃ vapor with H₂ at 1323 K. MoO₃ vapor was generated by the evaporation of industrial grade MoO₃, which is much cheaper than pure MoO₃. It is found that increasing H₂ concentration is beneficial for the reduction of MoO₃ to metal Mo, as well as for the decrease of particle size of Mo particles. The results obtained at a low H₂ concentration show that the mixture of hexagonal platelet-shaped MoO₂ single crystalline and Mo polycrystalline can be obtained. The present method provides a simple approach to prepare nanocrystalline Mo powder.     

Effect of sweeping voltage and compliance current on bipolar resistive switching and white-light controlled Schottky behavior in epitaxial BaTiO3 (111) thin films

Bipolar resistive switching (RS) phenomenon without required electroforming has been observed in epitaxial (111)-oriented BaTiO₃ (BTO) thin films deposited by PLD technique on conducting Nb-doped substrate of SrTiO₃ (NSTO). Negative differential resistance (NDR) is observed at about −5 V when the maximum of positive voltage exceeds 7 V and the compliance current is more than 1.5 mA. And bipolar resistive switching has also been observed. In addition, the resistance of LRS decreases with increasing compliance current or the maximum of positive voltage while that of HRS barely changes, and the resistance of HRS increases with increasing the absolute of maximum of negative voltage while that of LRS scarcely changes. A typical rectifying behavior is observed when the maximum of positive voltage is less than 4 V (such as 2 V). In this case, the reverse biased current is strongly enhanced under illumination of white-light, and vice versa. The resistance of LRS and HRS can be controlled by the applied voltage or the compliance current. The rectifying behavior can be controlled by the white-light. The transition from rectifying behavior to bipolar resistive switching can be controlled by the applied voltage. The above results were discussed by considering the oxygen vacancies that can trap or release electrons as a trapping layer at the Pt/BTO interface.     

Fatigue strength and microstructure evaluation of Al 7050 alloy wires recycled by spray forming,extrusion and rotary swaging

Recycled high-strength aluminum alloys have limited use as structural materials due to poor mechanical properties. Spray forming remelting followed by hot extrusion is a promising route for reprocessing 7xxx alloys. The 7050 alloy machining chips were spray formed, hot extruded, rotary swaged and heat-treated in order to improve mechanical properties. Microstructures, tensile properties and fatigue strength results for a 2.7 mm-diameter recycled wire are presented. Secondary phases and precipitates were investigated by XRD, SEM, EBSD, TEM and DSC. As-swaged and heat-treated (solution and aging) conditions were evaluated. Mechanical properties of both conditions outperformed AA7050 aerospace specification. Substantial grain refinement resulted from the extensive plastic deformation imposed by rotary swaging. Refined micrometric and sub-micrometric Al grains, as well as coarse and fine intermetallic precipitates were observed. Subsequent solution treatment resulted in a homogeneous, recrystallized and equiaxed microstructure with grain size of 9 μm. Nanoscale GP(I) zones and η′ phase precipitates formed after aging at 120 °C, imparting higher tensile (586 MPa) and fatigue (198 MPa) strengths.     

Luminescence and energy transfer of color-tunable Lu_2MgAl_4SiO_(12):Eu~(2+),Ce~(3+),Mn~(2+) phosphors

Energy transfer among the co-doped activators is an efficient route to achieve color-tunable emission in inorganic phosphors.Herein,photoluminescence tuning from blue to cyan has been achieved in the Lu_2MgAl_4 SiO_(12);Eu~(2+),Ce~(3+)phosphors by varying the Ce~(3+) concentration with a fixed Eu~(2+)content.With the further introduction of a Mn~(2+)-Si4+couple into the host lattice,the emission color can be tuned to red through the energy transfer of Eu~(2+)and Mn~(2+).The luminescence properties and the energy transfer mechanism were studied in detail.The energy transfer from Eu~(2+)to Ce~(3+)is certified as a dipolequadrupole interaction with the energy transfer efficiency of 41.4% and Eu~(2+)to Mn~(2+)belongs to a dipole-dipole interaction with the energy transfer efficiency of 94.3%.The results imply that this singlephased Lu_2MgAl4 SiO_(12):Eu~(2+),Ce~(3+),Mn~(2+)phosphor has a potential prospect for application in near-UV chip pumped white light emitting diodes.