Multi-function biquad using single current differencing transconductance amplifier

An universal multi input single output type multifunction biquad is proposed. The proposed configuration employs only one current differencing transconductance amplifier as the active element, two capacitors and three resistors. The circuit realizes all five filter functions (i.e. Low Pass, High Pass, Band Pass, Notch and All Pass) without changing the circuit topology. The natural frequency ω₀ is independently and electronically tunable. The workability of the proposed multifunction biquad has been verified using SPICE simulation.     

基于Tabu法的变压器铁心柱截面积优化

针对变压器铁心柱截面积优化设计 ,给出一种实用的Tabu算法。该方法具有迭代次数少、计算量小、稳定性好等优点 ,对于大直径、多级数的铁心柱截面积优化其优点更明显。数值算例表明 ,该方法与原有优化方法比较 ,优化效果更好 ,铁心利用系数可提高 2 %左右 ,具有一定的实用价值。     

THE FIFTH INTERNATIONAL CONFERENCE ON FLUID MECHANICS （ICFM-V）

Shanghai August 15-19, 2007Organized by Chinese Society of Theoretical and Applied Mechanics (CSTAM) Shanghai Jiaotong University (SJTU)Cosponsored by Gesellschaft fuer Angewandte Mathematik und Mechanik (GAMM) Bioengineering Division (BED/ASME) Fluid Eng…     

国产高压交流隔离开关的发展和向特高压的跨越

回顾了我国40年来超高压和特高压隔离开关的发展历程,对国产超高压和特高压隔离开关的水平进行了综合分析,指出了与跨国公司产品存在的差距,并总结了发展的主要经验。     

新沈高1100kV GIS的结构及计算

介绍了国外特高压开关设备的发展状况和新沈高1 100 kV GIS中的断路器、隔离开关、接地开关、母线和套管等关键组成元件的主要结构特点;对其中盆式绝缘子、支持绝缘子、进出线套管等关键部件的绝缘性能进行了分析计算,以该产品为主体的HGIS将进入国网特高压交流的示范工程。     

Dielectric studies of tin based chalcogenide glasses

The dc conductivity and dielectric parameters of glassy system of a-Se₇₀Te_30−x Sn _x (x = 0, 2, 4, 6, 8 and 10) glasses have been investigated. Frequency and temperature dependence of dielectric constants (ε′) and dielectric loss (ε′′) are studied in the frequency range 120–100 kHz and temperature range 300–390 K. Dielectric dispersion is observed when Tin (Sn) is incorporated to a-Se–Te system in the entire temperature range. These results explain that the dc conduction loss is dominated in the present system. From dc conductivity studies it is observed that the dc conductivity and activation energy increases with increasing tin concentration in the present system.     

Optical,structural and electrical investigations on PbTe<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> alloys

The fabrication of devices with lead salts and their alloys with detecting and lasing capabilities has been an important technological development. The high quality polycrystalline thin films of PbTe_1−x S _x with variable composition (0 ≤ x ≤ 1) have been deposited onto ultra clean glass substrates by vacuum evaporation technique. Optical, structural and electrical properties of PbTe_1−x S _x thin films have been examined. Absorption coefficient and band gap of the films were determined by absorbance measurements in wavelength range 2,500–5,000 nm using FTIR spectrophotometer. Sample nature, crystal structure and lattice parameter of the films were determined from X-ray diffraction patterns. DC conductivity and activation energy of the films were measured in temperature range 300–380 K through I–V measurements.     

Template replication for full wafer imprint lithography

Typically, the Step and Flash Imprint Lithography (S-FIL^TM) process uses field-to-field drop dispensing of UV-curable liquids for step-and-repeat patterning. Several applications, including patterned magnetic media, photonic crystals, and wire grid polarizers, are better served by a process that allows high-throughput, full-wafer patterning of sub-100 nm structures with modest alignment. Full-wafer imprinting requires a full-wafer template; however, creation of a wafer-scale imprint template with sub-100 nm structures is not feasible with direct-writing approaches. This paper describes a practical methodology for creating wafer-scale templates suitable for full-wafer imprinting of sub-100 nm structures.The wafer-scale template is replicated from a smaller area master template using the S-FIL step-and-repeat process. The pattern is repeated to accommodate the wafer substrate targeted for a particular application. The tone of the master template is maintained by employing an SFIL/R^TM (reverse tone) pattern transfer process. To create the replicate template, the patterns are imprinted onto a fused silica wafer that has been coated with chromium and an organic transfer layer. A silicon-containing resist, Silspin^TM, is spun on to planarize the organic monomer material. Following an etch back of the Silspin, the monomer and transfer layer are patterned using the Silspin as a hard mask. The Silspin and monomer stack then serves as a masking layer for the chromium and fused silica etches. The remaining monomer and chromium are then removed to create a conformal replicate template.     

Effect of cobalt-60 γ radiation on the physical and chemical properties of poly(ethylene terephthalate) polymer

The structural, optical, and morphological properties of Co⁶⁰ γ irradiation on poly(ethylene terephthalate) polymer samples were studied with X-ray diffraction (XRD), ultraviolet–visible spectroscopy, scanning electron microscopy (SEM), and Raman spectroscopy. The diffraction pattern of virgin sample showed that the polymer was semicrystalline in nature. However, because of irradiation, the crystallinity decreased up to a dose level of 110 kGy and increased up to 300 kGy. The crystallite size, strain, and dislocation were calculated from the XRD data, and the crystallite size decreased from 291.07 to 346.90 Å. The absorption edge shifted from 315 to 330 nm, and the band gap of the samples decreased from 3.79 to 3.66 eV. The SEM micrographs showed radial bulging along with inhomogeneous liner exfoliation, and also, a rocky shape pattern with different sizes was observed. A significant change was found in the Raman spectra of the γ-irradiated polymer at the highest dose. The results of the structural, optical, and morphological studies show recovery characteristics at the highest dose level of 300 kGy. © 2012 Wiley Periodicals, Inc. J Appl Polym Sci, 2012     

Pseudohalogenation of methyl 9-hydroxy-cis-12-and 12-hydroxy-cis-9-octadecenoate

Pseudohalogenation of methyl 9-hydroxy-cis-12-octadecenoate (I) and methyl 12-hydroxy-cis-9-octadecenoate (II) has been carried out with N,N-dibromobenzenesulfonamide (NNDBS). Compounds I and II, on reaction with NNDBS, formed four and three products, respectively. The interesting feature of these reactions was the formation of 1,4-epoxy compounds. The structures of individual compounds were established with the help of elemental and spectral analysis.