The influence of deposition parameters on the optical and electrical properties of r.f.-sputter- deposited indium tin oxide films

The fabrication and characterization of indium tin oxide thin films prepared by r.f. sputter deposition from a target of composition 90mol.% In₂O₃-10mol.%SnO₂ are described. The properties were found to depend on the rate of deposition, the post-deposition heat treatment and the composition of the sputtering gas. Using the optimum combination of these parameters, films with a resistivity of 1.36 x 10^-4 Ω cm were produced. Films with a thickness of less than 1000 Å had a visible transmittance of greater than 80% for wavelengths in the range 450–1500 nm (being greater than 90% above 550 nm).