High mobility,low voltage polymer transistor

We introduce a polymer transistor that operates with low supply voltage and yet has a field-effect mobility higher than the mobilities reported for low voltage polymer transistors. A simple plasma oxidation of the gate metal to form a thin (3.74 nm) top metal oxide layer in the gate metal is involved in the fabrication that acts as the gate dielectric. With ultrathin gate dielectrics, the variation in the dielectric thickness and the surface roughness scattering can severely limit the mobility attainable. The plasma oxidation under certain conditions produces a very smooth oxide surface, leading to the high mobility.     

HZSM5分子筛膜复合二氧化锡对甲烷的气敏性能研究

采用液相氧化法制备二氧化锡纳米颗粒,并利用浸渍法制备Pd负载二氧化锡纳米材料,通过丝网印刷得到气敏传感膜并在其表面印刷分子筛层。基于动态气敏测试系统探究传感器对甲烷气体的灵敏度及其在CO和乙醇干扰气体下的选择性。研究结果表明,在Pd-SnO₂敏感层表面印刷Pd-HZSM5层后,传感器对甲烷的响应能力显著提高,并且在体积分数为5×10^-4的CO存在时,对甲烷的选择性也得到明显的提升。同样,在质量分数为2×10^-5乙醇的存在下,传感器对甲烷的响应也没有受到干扰。通过对分子筛进行表征和催化分析,发现Pd-HZSM5对CO的催化效率可达100%,使得CO在扩散过程中被催化氧化,这可能是印刷Pd-HZSM5分子筛膜从而提高传感器选择性的主要原因。同时研究还表明,在敏感层表面印刷分子筛层并不会影响传感器的响应和恢复速率。     

一种高性能FPGA辐射发射抑制方法研究

随着半导体技术的不断发展,集成电路的电路速度、集成密度和I/O端口数量已大大增加,FPGA的小型化、高密度集成会引发电磁兼容性的问题,电磁屏蔽是抑制电磁辐射最有效的方法,选择高效的电磁屏蔽材料可以取得良好的屏蔽效果.而目前电磁屏蔽材料在FPGA上的应用较少,因此选取了一款具有代表性的高性能FPGA作为研究对象,通过近场...     

Bromine,copper, manganese and lead content of the leaves of Taraxacum officinale (dandelion)

Neutron activation analysis and atomic absorption spectrometry have been used to determine the Br, Cu, Mn and Pb content of leaves of Taraxacum officinale (dandelion). The elemental content of the leaves correlated with the extent of anthropogenic pollution of the region where the plant developed. The dependence of the element concentrations on the distance from the source has been evaluated. A positive linear correlation was observed between the Cu and Pb, Cu and Sb, Pb and Cd, and Pb and Zn content of the leaves.     

非离子表面活性剂在钽基阻挡层CMP中的作用

碱性条件下,非离子型表面活性剂在阻挡层化学机械平坦化中起着重要的作用。分别对阻挡层材料Cu、Ta以及SiO₂介质进行抛光,然后测量铜表面粗糙度。对含有不同浓度活性剂的抛光液进行接触角和Zeta电位的测试,并对活性剂的作用机理进行分析。活性剂体积分数达到3%时,铜表面粗糙度可达0.679 nm,抛光液在铜膜表面的接触角低至10.25°,Zeta电位达到-50.2 mV。实验结果表明,活性剂在减小粗糙度的同时可提高抛光液的湿润性和稳定性,便于抛光后清洗和长时间放置。     

Feasibility research of Yb3Al5O12 garnet as environmental barrier coating materials

In this work, Yb₃Al₅O₁₂ (YbAG) garnet, as a new material for environment barrier coating (EBC) application, was synthesized and prepared by atmospheric plasma spraying (APS). The phases and microstructures of the coatings were characterized by XRD, EDS and SEM, respectively. The thermal stability was measured by TG-DSC. The mechanical and thermal-physical properties, including Vickers hardness (H_v), fracture toughness (K_IC), Young's modulus (E), thermal conductivity (κ) and coefficient of thermal expansion (CTE) were also measured. The results showed that the as-sprayed coating was mainly composed of crystalline Yb₃Al₅O₁₂ and amorphous phase which crystallized at around 917 °C. Moreover, it has a hardness of 6.81 ± 0.23 GPa, fracture toughness of 1.61 ± 0.18 MPa m^1/2, as well as low thermal conductivity (0.82–1.37 W/m·K from RT-1000 °C) and an average coefficient of thermal expansion (CTE) (∼6.3 × 10⁻⁶ K⁻¹ from RT to 660 °C). In addition, the thermal shock and water-vapor corrosion behaviors of the Yb₃Al₅O₁₂-EBC systems on the SiC_f/SiC substrates were investigated and their failure mechanisms were analyzed in details. The Yb₃Al₅O₁₂ coating has an average thermal shock lifetime of 72 ± 10 cycles as well as an excellent resistance to steam. These combined properties indicated that the Yb₃Al₅O₁₂ coating might be a potential EBC material. Both the thermal shock failure and the steam recession of the Yb₃Al₅O₁₂-EBC systems are primarily associated with the CTE mismatch stress.     

Structural characteristics and microwave dielectric properties of Zn1−xBixVxW1−xO4-based ceramics for LTCC applications

Herein, the improvement of the microwave dielectric properties and sintering characteristics of Zn_1?xBi_xV_xW_1?xO₄(x = 0–0.15)-based ceramics is reported. The results showed that an appropriate amount of doping could not only reduce the optimum sintering temperature from 1100° to 900°C, but also enhance the densification of the microstructures and increase the Q×f value from 5351 to 42525 GHz. Additionally, various structural parameters including the phase composition, crystal structure, vibrational and chemical bond characteristics that are correlated with the dielectric properties were systematically investigated. By considering the chemical bond characteristics, the first-principles calculations and the acquired Raman spectra, the interaction between W-O is stronger than Zn-O in the ZnWO₄ structure, while the interaction between V-O is stronger than Bi-O in BiVO₄. Interestingly, when the Zn_0.97Bi_0.03V_0.03W_0.97O₄-based ceramics were sintered at 900 °C, improved microwave dielectric properties were acquired (ε_r =18.32, Q×f=42525 GHz, τ_f=?67.51 ppm/°C), which provides a promising candidate in low-temperature co-fired ceramics technology.     

Microwave dielectric characteristics of tungsten bronze-type Ba4Nd28/3Ti18-yGa4y/3O54 ceramics with temperature stable and ultra-low loss

A series of high-k Ba₄Nd_28/3Ti_18-yGa_4y/3O₅₄ (0≤y≤2, BNTG) ceramics with temperature stable and ultra-low dielectric loss were synthesized via the conventional solid-state reaction. The main phase of all BNTG ceramics demonstrated an orthorhombic tungsten-bronze structure, but the impurity phase (gallium-rich phase) was found in BNTG (y = 2) ceramic. Partial substitution of Ga³⁺ for Ti⁴⁺ in B-site was a valid method to improve the temperature stability and dielectric loss of BNTG ceramics. The variation of ε_r values of BNTG ceramics was dominated by the ionic polarizability. The ultra-low dielectric loss (ultra-high Q × f values) was associated with grain size, suppression of Ti³⁺ and impurity phase. The decrease of TCF values was highly dependent on the tilting of Ti-O octahedra and impurity phase. Finally, outstanding combination dielectric characteristics were achieved for BNTG microwave ceramics at y = 1.5 (ε_r = 72.8, Q × f = 14,600 GHz, TCF=+4.1 ppm/°C) and at y = 2 (ε_r = 70.3, Q × f = 15,500 GHz, TCF=+3.9 ppm/°C).     

Thermal undoping in poly(3-alkylthiophenes)

Thin solid films of doped poly(3-hexylthiophene) and poly(3-decylthiophene) undergo rapid conductivity degradation at elevated temperatures (110 °C). We have followed the changes in the electronic structure during thermal treatment by optical spectroscopy. We have also studied thin films of the materials, before and after heat treatment, by means of infrared and X-ray photoelectron spectroscopy. The results show that the materials are undoped by thermal treatment. Comparative studies on poly(3-methylthiophene) show that this polymer also undergoes thermal undoping, but at a much slower rate.