Effect of BaCu(B2O5) on the sintering and microwave dielectric properties of Ca0.4Li0.3Sm0.05Nd0.25TiO3 ceramics

The sintering behaviors and microwave dielectric properties of the Ca_0.4Li_0.3Sm_0.05Nd_0.25TiO₃ (abbreviated CLSNT) ceramics with different amounts of BaCu(B₂O₅) addition were investigated in this paper. Adding BaCu(B₂O₅) to CLSNT lowered its sintering temperature from 1300 °C to 925 °C. No secondary phase was observed in the CLSNT ceramics and complete solid solution of the complex perovskite phase was confirmed. The CLSNT ceramics with small amounts of BaCu(B₂O₅) addition could be well sintered at 925 °C without much degradation in the microwave dielectric properties. Especially, the 1.75 wt.% BaCu(B₂O₅)-doped CLSNT ceramic sample sintered at 925 °C for 3 h had optimum microwave dielectric properties of ε_r = 93.5 ± 3.2, Q × f = 6486 ± 434 GHz, and τ_f = 5 ± 1.5 ppm/°C (at 3–4 GHz), enabling it a promising candidate material for LTCC applications. Obviously, BaCu(B₂O₅) could be a suitable sintering aid to facilitate the densification and microwave dielectric properties of the CLSNT ceramics.     

Temperature and frequency dependence of dielectric loss of Ba(Mg1/3Ta2/3)O3 microwave ceramics

Ba(Mg_1/3Ta_2/3)O₃ ceramic possessing extremely high Q × f value of more than 300 THz at microwave frequency was developed in our previous study. It is of great interest to understand the mechanism of microwave absorption in such a practical material. In the present study we report on the temperature dependence of the dielectric loss in the Ba(Mg_1/3Ta_2/3)O₃. The mechanism of the microwave absorption is discussed using two phonons difference process. The samples were prepared by conventional solid state reaction and sintered at 1893 K in oxygen atmosphere. Dielectric properties in the microwave range were measured by Hakki & Colemann and resonant cavity methods in the temperature range of 20–300 K. Whispering gallery mode technique was used for the measurement of the dielectric properties at the millimeter wave frequency. Dielectric loss of the Ba(Mg_1/3Ta_2/3)O₃ at the microwave frequency increases with temperature between 200 and 300 K in general agreement with the theory of intrinsic dielectric loss derived from the two phonon difference process. However below 200 K, the dielectric loss has shown a distinctive behavior with a loss peak at 40 K. It was inferred that the loss peak of the Ba(Mg_1/3Ta_2/3)O₃ was caused by the local orientation polarization having dispersion at the microwave frequency.     

Rashba效应下三角量子阱中弱耦合束缚极化子的性质

利用线性组合算符和幺正变换相结合的方法,推导出三角量子阱中弱耦合束缚极化子的基态能量。并讨论了耦合常数,库仑束缚势和电子面密度对极化子基态能量的影响。通过对GaAs材料的数值计算,最后结果显示：由于电-声子耦合作用和Rashba效应的存在,弱耦合束缚极化子的基态能量由四部分组成,而且弱耦合束缚极化子的基态能量随耦合常数,库仑束缚势和电子面密度都发生了分裂。     

太赫兹行波管的研究进展

太赫兹行波管具有输出功率高、频带宽、紧凑轻便等优点,是一种理想的太赫兹辐射源,可望在军事、民用领域得到广泛应用。本文对国内外太赫兹行波管的研究现状进行了较详细的介绍和归纳总结,并对其发展趋势做了论述分析。     

基于声光衍射测激光波长的一种新方法

介绍了一种新的测量激光波长的方法。在室温条件下,利用压电陶瓷片在高频信号源产生交变电场作用下获得超声波,超声波在液体中传播形成超声光栅。在光具座上利用准直透镜和测微目镜组成的望远系统替代了分光计,完成了对在已知波长钠光、未知波长激光的照射下形成了光栅光谱宽度的测量,并结合光栅方程,得出激光的波长。该方法原理简单,结果与激光波长标定值的相对误差小,可以作为超声光栅的一个扩展试验。     

Influence of Zr dopant on polarization in rutile (In0.5Nb0.5)0.005(Ti1-xZrx)0.995O2 ceramics

(In_0.5Nb_0.5)_0.005(Ti_1-xZr_x)_0.995O₂ (INZT, x = 0-0.10) ceramics were synthesized using a conventional sintering method, and the effects of Zr content on the microstructures, dielectric properties and electron-pinned defect-dipoles (EPDD) polarization of the resultant products were investigated. The solubility limit of INZT was x = 0.075, and a secondary ZrTiO₄ phase appeared at x = 0.10. Ceramics with x = 0-0.10 exhibited excellent dielectric properties, ie, colossal permittivity (CP, εʹ > 10³) and low dielectric loss (tanδ < 0.1), over a wide range of frequencies (10⁰-10⁶ Hz at 300 K) and temperatures (50-350 K at 1 kHz). The dielectric spectra and XPS results confirmed that the CP property of the ceramics could be ascribed to their EPDD polarization. The activation energy (E_a) for EPDD polarization was continuously enhanced by increasing x values. EPDD relaxation parameters at different x values were revealed using Cole-Cole equation fitting. Moreover, α, which characterize the relaxation time τ distribution, increased with x values, thus indicating that Zr was involved in and affected electron localized states. The high E_a, temperature T_p of the peak εʹʹ at 1 kHz, and dielectric relaxation time τ_p at 30 K were related to increases in hopping distance of electrons among defect clusters with Zr addition.     

First-Principles Studies on Magnetic Stability of SrC and BaC in Rocksalt, Zincblende, and Nickel Arsenide Phases Under Pressure

Using the first-principles method based on the density functional theory, we investigated the magnetic stability of sp half-metal ferromagnets SrC and BaC in rocksalt (RS), zincblende (ZB), and nickel arsenide (NA) structures under external pressure. The magnetic moments, total energy of magnetic and nonmagnetic phases, and lattice constants are calculated as a function of the applied pressure. The calculations show the occurrence of pressure-induced magnetic phase transitions which are mainly resulted from the band widening of anion p states. It is also confirmed that for both SrC and BaC, the rocksalt structure is the most stable phase among the three phases.     

A low-power cryogenic analog to digital converter in standard CMOS technology

This paper presents a cryogenic successive approximation register (SAR) based analog to digital converter (ADC) in standard 0.35 μm complementary metal oxide semiconductor (CMOS) technology that functions from 300 K (room temperature) down to 20 K. It has been designed to operate in low temperature mid- and far-infrared imaging systems. In order to ensure the circuit performance at the extreme temperatures, a dedicated integral-based comparator architecture is employed. SPICE models have been developed for circuit simulation at 20 K. At 20 K, the experimental results exhibit that the ADC achieves 1.6 LSB maximum differential nonlinearity (DNL), 1.7 LSB maximum integral nonlinearity (INL), and 10.4 effective number of bits (ENOB) at 100 kS/s sampling rate with a current consumption of 75 μA from a 3.3 V supply.     

The effect of different lattice sites substitution on photoluminescence characteristics of Eu2+/Ce3+ doped M5(ZO4)3X

The empirical formula of Van Uitert is applied to calculating the emission wavelengths of haloapatite and silicon apatite phosphors doped with Eu²⁺/Ce³⁺. The relationship between emission wavelengths and occupied lattice sites of Eu²⁺/Ce³⁺ is discussed in haloapatite crystal. For phosphors of haloapatite and silicon apatite doped with Eu²⁺, the emission bands of the long-wave region are interpreted reasonably. Phosphors Sr₅(PO₄)₂SiO₄ doped with Eu²⁺/Ce³⁺ are synthesized by high temperature solid state reaction under two different atmospheres, the spectral characteristics of Eu²⁺/Ce³⁺ occupying different lattice sites are studied. The luminescent materials Sr₅(PO₄)₂SiO₄ doped with Eu²⁺/Ce³⁺ are promising blue-green phosphors for application in white-LEDs.