体声波滤波器自动布局工具的设计开发

为了实现体声波（BAW）滤波器版图的自动排布和构建滤波器的三维模型,开发了一款体声波滤波器自动布局工具。根据文献提出的BAW梯形滤波器布局设计流程,基于.NET平台,使用C#语言,创建生成滤波器版图的功能界面。根据输入的薄膜体声波谐振器(FBAR)个数和面积大小生成对应的多边形外接圆,通过FBARs的串并联连接情况,生成放置外接圆的位置,并生成多边形。生成多边形后,用户只需对其进行微调(拖动、旋转等),即可在保证滤波器性能的情况下,得到面积尽可能小的版图。在所完成的滤波器版图基础上,根据滤波器的结构参数和建模方式, 在AutoCAD中导入写好的动态链接库,创建生成滤波器三维模型的功能界面。输入FBAR膜层厚度等参数后,软件自动生成滤波器的三维模型。并自动保存为可导入电磁仿真软件的dwg文件或sat文件,方便滤波器的电磁仿真。设计开发过程中所用滤波器的结构参数等即为该文验证所设计软件的案例。证明了所开发软件的可行性。即软件在保证滤波器性能的情况下,最大限度地缩小版图面积,提高滤波器在晶圆上的面积利用率,且节省了滤波器设计人员的时间和精力。     

无线局域网室外覆盖路径损耗计算分析及规划布局建议

介绍了无线局域网(WLAN)所用IEEE 802.11x标准的技术特点和频率特性,选择修正的COST231 HATA无线信号传播模型对信号路径损耗进行计算,以图表的形式描述了WLAN所在频段(2.4 G-Hz)的空间信道衰落特征.通过计算得出结论:随着传输距离和AP/STA天线高度差的增加,WLAN无线信道路径损耗将迅...     

峰值电流模式控制非理想Buck变换器系统建模

为提高开关变换器系统建模的精度,减少模型与实际电路之间的偏差,更好地指导系统芯片设计,基于能量守恒法和开关元件平均建模法,考虑各元件等效寄生参数及电感电流纹波等非理想因素的影响,加之输出电流波动对电路性能的影响,建立包含输出阻抗的非理想Buck变换器功率级小信号模型。在此基础上,对峰值电流模式控制非理想Buck变换器的控制环路进行了非理想参数建模,最终建立起整个峰值电流模式控制的非理想Buck变换器系统小信号模型。通过模型分析以及在Matlab中的仿真可以看出,所建模型直观、有效、实用,且物理意义清晰,能够更加准确地反映实际电路的工作情况。     

VRB电解液的高锰酸钾电位滴定分析

分析钒离子的状态及浓度,可检测全钒氧化还原液流电池(VRB)的荷电状态、容量和充放电效率.采用KMnO4(NH4)2Fe(SO4)2体系为滴定剂的电位滴定法来分析钒电解液,可测定电解液中V(Ⅱ)、V(Ⅲ)、V(Ⅳ)和V(Ⅴ)的单一价态、混合价态离子浓度及电解液的总钒浓度.结果表明:测得的各价态钒及总钒的相对标准偏差(N...     

海面与上方目标复合电磁散射的矩量法研究

采用Monte Carlo方法模拟了一维PM谱海面.运用矩量法研究了一维PM谱海面及其上方二维矩形截面导体柱的复合电磁散射特性,并将计算结果与FDTD结果进行了比对,验证了该算法的正确性。数值计算得到了复合散射系数随散射角的变化曲线,讨论了海面风速、矩形截面柱尺寸和倾角、矩形截面柱中心距离粗糙面的高度对复合散射系数的影响。结果表明,矩形截面柱参数对非镜向复合散射散射系数影响显著,而对镜向散射系数较小。     

Preparation of PZT suspensions for direct ink jet printing

The present paper contains an experimental study of two different kinds of PZT suspensions for direct ink jet printing at 25 and 120 °C, respectively. The effect of processing parameters such as mixing time, the amount of dispersant, solid loading and milling method was investigated for the optimisation of viscosity for feasible jetting. The viscosity of PZT suspensions was within 5–15 mPa·s range for room temperature suspensions with MEK/EtOH medium and 10–20 mPa·s for high temperature suspensions with wax medium. FTIR analysis is also presented to explain the rheological behaviour of PZT suspensions. Finally, a demonstration of room temperature jetting of PZT suspension is shown.     

Hysteretic properties of Mn-doped Pb(Zr,Ti)O3 thin films

Pb(Zr,Ti)O₃ (PZT 30/70) and Mn-doped Pb(Zr,Ti)O₃ (PMZT 30/70) thin films have been fabricated on Pt/Ti/SiO₂/Si substrates by a chemical solution deposition technique. The experiments found that the addition of Mn in PZT thin films greatly improves the ferroelectric properties of thin films. It is demonstrated that the Mn-doped (1 mol%) PZT showed fatigue-free characteristics at least up to 10¹⁰ switching bipolar pulse cycles under 10 V and excellent retention properties. The Mn-doped PZT thin films also exhibited well-defined hysteresis loops with a remnant polarization (Pr) of 34 μC/cm² and a coercive field (Ec) of 100 kV/cm for the thickness of 300 nm. Dielectric constant and loss (tanδ) for Mn doped PZT thin films are 214 and 0.008, respectively. These figures compare well with or exceed the values reported previously. In this paper, the mechanism by which Mn influences on the ferroelectric properties of PZT thin films has also been discussed.     

Microstructure and electrical characteristics of ZnO–B2O3–PbO–V2O5–MnO2 ceramics prepared from ZnO nanopowders

A peculiar kind of ZnO–B₂O₃–PbO–V₂O₅–MnO₂ ceramics was produced from the ZnO nanopowders directly co-doped with the oxides instead of lead zinc borate frit in this investigation. The 8 wt.% (PbO+B₂O₃) co-doped ceramics sintered at 950 °C for 2 h displayed the optimum electrical properties, that is, leakage current density J_L=6.2×10⁻⁶ A/cm², nonlinear coefficient α=22.8 and breakdown voltage V_BK=331 V/mm. The co-doping of 8 wt.% (PbO+B₂O₃) resulted in an increase in nonlinear coefficient and a decrease in leakage current density of the ZnO–V₂O₅ varistors while the sintering temperature showed no evident influence on nonlinear coefficient and leakage current density at the range of 800–950 °C.     

Highly efficient blue electroluminescence based on a new anthracene derivative

A novel blue-light-emitting material, 2,3,6,7-tetramethyl-9,10-dinaphthyl-anthracene (TMADN), was synthesized and characterized. Organic light-emitting diode (OLED), which has a double-layer structure, has been fabricated. In this OLED, the homemade TMADN was used as the light-emitting material and 4,7-diphenyl-1,10-phenanthroline (DPA) was used as the hole blocking/electron transporting material, N,N′-biphenyl-N,N′-bis-(1-naphenyl)-[1,1′-biphenyl]-4,4′-diamine (NPB) was used as the hole transporting material. The peak emission of electroluminescence (EL) is at about 456 nm and the CIE coordinates are (0.171, 0.228). The brightness of the device is up to 5600 cd/m² at 17 V with the maximum EL efficiency of 2.2 cd/A.