Narcissism, sexual refusal, and aggression: Testing a narcissistic reactance model of sexual coercion.

Laboratory analog studies investigated the theory that narcissism and reactance contribute to causing rape. In Study 1, narcissism correlated positively with rape-supportive beliefs and negatively with empathy for rape victims. In Study 2, narcissists reported more enjoyment than other men of film depictions that presented consensual, affectionate activity followed by rape (but not in response to either affection or rape alone). In Study 3, narcissists were more punitive than other men toward a female confederate who refused to read a sexually arousing passage aloud to them. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

TRVs and fault clearing stresses in extra-high-voltage radial networks

To cope with the high rate of increase of power demand in the main industrialized districts in Japan, 550-kV transmission systems covering the districts have been reinforced, with most of the main power plants connected directly to these systems. Through 550-/300-kV substations, the majority of power to the districts is supplied by 300-kV systems. To limit the excess short-circuit capacity in the 300-kV systems, they tend to be reconstructed as so-called radial networks. In radial networks with high short-circuit capacity and relatively small number of transmission lines connected to the substation busbars, the rate of rise of TRV can be far higher than standard value. This paper analyzes the transient recovery voltages (TRV) in such extra-high-voltage radial networks in Japan, together with the relevant stresses to circuit-breakers during fault clearings. Future system conditions have also been introduced. As the typical rate of rise of the TRV values, more than twice that of today's standard ones are probable.     

Microstructural evidence for short-circuit oxygen diffusion paths in the oxidation of a dilute Ni-Cr alloy

A comparative study of high-temperature oxidation of Ni containing 1 at.% Cr and pure Ni was carried out. Instead of the conventional kinetics study using thermogravimetry, a microlithographic marker experiment was designed. Observation of the markers using cross-sectional TEM and SEM has revealed striking differences in the scale morphology, microstructures, and oxidation mechanisms between pure Ni and the Cr-doped Ni substrates. In particular, the results suggest that a small addition of Cr promotes significant inward transport of oxygen. Marker experiments revealed that NiO grown on pure Ni is wholly attributable to outward-cation diffusion. In contrast, NiO grown on Ni–1 at.% Cr exhibited formation of a substantial inner layer having a submicron grain size, established by the markers to have formed from oxygen ingress. For pure Ni, voids were observed to be distributed only within oxide grains. In contrast, for Ni containing 1 at.% Cr, elongated pores formed extensively along oxide-grain boundaries. Formation of new fine-grain oxide in these pores was observed to have sometimes completely resealed the void. It is, therefore, proposed that the transport of oxygen in the case of oxide scale grown on Ni–1 at.% Cr occurs via voids (pores) formed by vacancy coalescence at the grain boundaries.     

基于DSP320F2812的数字化CO2焊机研制

设计了数字化CO2焊机的硬件结构,并根据CO2焊接工艺的特点,编写了相应的控制软件,实现了整个焊接系统的数字化.试验结果表明,基于DSP320F2812芯片控制的焊接电源具有良好的动特性,获得了较好的控制效果,为控制策略的智能化和最优化提供了良好的平台.     

四相永磁容错电机短路故障容错策略

四相永磁容错电机采用被容错齿隔开的集中式绕组结构,本质上具有一定的容错能力和故障出现后连续运行的能力.针对H桥和星形这两种驱动拓扑结构,在发生单相绕组出线端部短路时,以容错控制后的转矩满足正常需求为目标,分别采用直接转矩补偿方法和旋转磁动势不变方法进行容错控制;对两种容错控制策略进行了推导和对比分析,并对相关结果进行了磁-路联合仿真计算,验证了理论分析的正确性.     

整定管理软件系统在继电保护故障分析中的应用探析

结合实际工作经验,讨论了整定计算软件在新型继电保护系统中应用的必要性,评定和探究了整定管理在继电保护故障分析中的运用,并总结了整定管理在整套系统中的实际应用。     

基于包络线和函数拟合的录波数据分析

提出了一种基于包络线和函数拟合来分析短路电流录波数据的实用算法.首先对短路电流录波波形取包络线,利用指数函数拟合,滤除衰减直流分量;然后对周期分量取包络线,通过指数函数拟合来分析短路电流衰减基波分量,最终实现对暂态短路电流基波分量有效值时域内的多分辨率观察与研究.     

SiC MOSFET短路失效与退化机理研究综述及展望

SiC MOSFET可以大幅提升变流器的效率和功率密度,在高频、高温、高压等领域有较好的应用前景。但是,由于其短路耐受时间短、特性退化现象严重以及失效机理模糊等因素,致使SiC MOSFET的普及应用受到了限制。因此,探究SiC MOSFET短路失效与特性退化的机理,可以为SiC MOSFET器件的应用及其保护电路的设计提供指导,具有重要的研究价值。该文首先归纳SiC MOSFET的短路故障类型,并针对其中一种典型的短路故障进行详细的特性分析。在此基础上,论述SiC MOSFET单次短路故障后存在的两种典型失效模式,综述其在两种失效模式下的失效机理以及影响因素。其次,对SiC MOSFET经历重复短路应力后器件特性退化机理的研究现状进行系统的总结。最后指出当前SiC MOSFET短路失效与特性退化的研究难点,展望SiC MOSFET短路特性研究的发展趋势。     

CO2焊短路信号和缩颈信号的获取

采用光耦6N136对电弧电压进行隔离，得到了失真很小的孤压信号，设计了短路检测电路和缩颈检测电路．并在缩颈检测电路中加入削波电路，成功地消除了燃弧电压时缩颈检测电路的影响。通过实际焊接试验，验证了所设计的短路检测电路和缩颈检测电路是成功的。     

IGBT逆变CO2焊电源波形控制系统

针对短路过渡的CO2焊及IGBT逆变电源，提出了一种简单，易行，可减小CO2焊接过程飞溅，改善焊缝成形的波形控制系统。