用于SDH网络分析的E1/T1解映射和帧处理电路设计

设计了一个用于SDH网络分析的E1、T1信号解映射和帧处理电路.该电路能从符合ITU-TG.707标准的SDH虚容器VC-X中解映射出符合ITU-TG.704标准中所规定的E1、T1帧结构的PDH数据,对解映射出来的信号依据各种帧结构进行解帧和解复帧处理,并进行各种告警检测和性能分析,同时输出处理好的PDH净负荷.该电路也可以对PDH电信号中的E1、T1信号进行帧处理.     

WCDMA基站传输技术的研究

随着国内3G网络大规模建设和应用,以及3G业务尤其是数据业务的急剧增长,对基站传输的要求也越来越高,现有基站的传输方式将成为3G业务发展的瓶颈。对E1、FE等基站传输组网方案进行了分析、研究,并对WCDMA基站的传输规划提出了建议。     

基于飞行时间法的纳秒量级时间间隔测量系统研制

为了更好地探测空间等离子体成分,研究了一种基于飞行时间法的纳秒量级时间间隔测量系统,分别介绍了该系统的三个组成部分CPU模块、时间间隔测量模块、数据传输模块。并着重研究了纳秒量级时间间隔的测量方法,详细介绍了主要时间间隔测量芯片TDC-GP1。并对数据传输模块的设计做了简要说明。实验结果表明,该测量系统的性能可满足探测需求。     

Magnetic tunnel junctions with doubly-plasma oxidized AlOx insulation layer

Magnetic tunnel junctions (MTJ), with the tunnel barrier plasma oxidized in two steps, were fabricated in order to obtain structurally uniform AlO_x insulator. The doubly oxidized junctions exhibited the magnetoresistance (MR) ratio of 27-31% without showing any noticeable drop in the MR ratio even after oxidation time was extended well beyond the optimal oxidation time for the normal junctions. Transmission electron microscopy of the junctions confirmed that the AlO_x thickness was thinner for the doubly oxidized junctions compared to the singly oxidized MTJ. X-ray photoelectron spectroscopy of the doubly oxidized junction also strongly suggested that the initial oxide layer prevents the over-oxidation of the bottom electrode. The AlO_x tunnel barrier oxidized in two steps improved the junction performance and widened the processing window.     

CS5530_F1模／数转换器在拉力试验机中的应用研究

拉力试验机的测量部分要求采集的数据精度高,模／数转换速度快,针对这一要求,介绍了一种用于数据采集的芯片CS5530_F1。通过分析它的性能特点,设计了CS5530_F1在数据采集中的硬件电路,重点研究了用CS5530_F1采集数据的编程方法。实验证明,CS5530_F1采集的数据精度高,速度快,效果好。这里采用24位的数据采集芯片,大大提高了数据精度和转换速度。     

浅析CDMA20001xEV-DO小区数据业务负荷及优化扩容思路

文章从CDMA20001xEV—DO与CDMA20001×的数据业务实现入手,通过对EV—DO小区数据业务三个相关指标的分析,找出判定EV—DO小区数据业务重负荷的依据,对负荷较重的小区提出了优化扩容原则和思路。     

Performance of Broadcast and Multicast Service with Interference Cancellation Based on Macro Diversity

The cdma2000 1xEV-DO mobile communication system provides broadcast and multicast services(BCMCS) to meet an increasing demand for multimedia data services.Single frequency network(SFN) is recognized as an effective way to improve the spectral efficiency of the BCMCS system.To improve the coverage and the data rate of the BCMCS users,an interference cancellation algorithm based on macro diversity is introduced in this paper.The performance of BCMCS in CDMA2000 EV-DO networks under the condition of SFN is evaluated.The simulation results show a significant improvement in bit error ratio(BER) while quantitatively validating the efficiency of our approach.     

相关观测值的一次范数条件平差

本文基于独立观测值的一次范数最小平差原理,导出了相关观测值的一次范数条件平差(L_1条件平差)模型,并以实例加以分析和讨论.     

Facile electrosynthsis of poly (pyrene-1-sulfonic acid sodium salt) film: A good candidate for blue light-emitting diodes applications

Pyrene-1-sulfonic acid sodium salt (PyS) was chemically synthesized, and its polymer film, poly (pyrene-1-sulfonic acid sodium salt) (PPyS), was successfully electropolymerized by direct anodic oxidation both in aqueous and boron trifluoride diethyl etherate (BFEE) systems. The PPyS films showed good redox activity and structural stability even in SA. The impedance spectra of PPyS films indicated that the electron transfer resistance was about 23 Ω. The fluorescent result exhibited that the emission band of PPyS was red-shifed at least 76 nm in comparison with the monomer. Both the impedance and the fluorescent spectra demonstrated that the PPyS films were good semiconducting polymer and excellent blue-light-emitting materials, respectively.     

High-performance and broadband photodetection of bicrystalline(GaN)1-x(ZnO)x solid solution nanowires via crystal defect engineering

Crystal defect engineering is widely used as an effective approach to regulate the optical and opto-electronic properties of semiconductor nanostructures.However,photogenerated electron-hole pair recombination centers caused by structural defects usually lead to the reduction of optoelectronic perfor-mance.In this work,a high-performance photodetector based on(GaN)1-x(ZnO)x solid solution nanowire with bicrystal structure is fabricated and it shows excellent photoresponse to ultraviolet and visible light.The highest responsivity of the photodetector is as high as 60,86 and 43 A/W under the irradiation of 365 nm,532 nm and 650 nm,respectively.The corresponding response time is as fast as 170,320 and 160 ms.Such wide spectral responses can be attributed to various intermediate energy levels induced by the introduction of various structural defects and dopants in the solid solution nanowire.Moreover,the peculiar bicrystal boundary along the axial direction of the nanowire provides two parallel and fast trans-mission channels for photo-generated carriers,reducing the recombination of photo-generated carriers.Our findings provide a valued example using crystal defect engineering to broaden the photoresponse range and improve the photodetector performance and thus can be extended to other material systems for various optoelectronic applications.