Diamond icosahedron on a TiN-coated steel substrate

Diamond layers have been deposited by hot filament chemical vapour deposition (HF CVD) on TiN-coated steel substrates. After deposition, we could observe separate, well-developed diamond icosahedrons and decahedrons on the surface. We have found that a lower content of methane in hydrogen supports their growth, this being a result of multifold twinning. The quality of diamond layers has been evaluated by Raman spectroscopy and scanning electron microscopy.     

优化机组启动操作促进机组节能降耗

<国民经济和社会发展第十一个五年规划纲要>提出了"十一五"期间单位国内生产总值能耗及主要污染物排放总量目标指标.作为耗能及排放大户的火力发电厂,以我国现有300MW直流锅炉运行概况.如何从机组启动操作、运行调整角度上进行优化,达到提高机组运行经济性、降低污染物排放量目标.     

Crystal Facet Engineering of Single-Crystalline TiC Nanocubes for Improved Hydrogen Evolution Reaction

Single-crystalline {100} faceted TiC is of great significance in theory to a large number of engineering applications owing to its extraordinary catalytic properties. However, the {111} planes are prevalent in conventional TiC powders given their favorable thermodynamic stability during the initial low stoichiometric growth stage. Herein, a disproportionation–decomposition strategy is developed to directly produce Ti and C atoms to synthesize single-crystalline {100} faceted TiC powders. Outstanding electrochemical performance of TiC {100} crystal planes in terms of the hydrogen evolution reaction is evidenced by an overpotential of 392 mV at 10 mA cm⁻², which is 52% lower than that of randomly faceted TiC counterparts (815 mV).     

Epitaxial TiN based contacts for silicon devices

We have grown high quality epitaxial TiN/Si(100) and Cu/TiN/Si(100) heterostructures by pulsed laser deposition. The epitaxial TiN films have the same low (15 μΩ-cm) resistivity as TiSi₂ (C-54) phase with excellent diffusion barrier properties. In addition, Schottky barrier height of TiN was close to that of TiSi₂ (0.6-0.7 eV). Auger and Raman spectroscopy revealed that the films were stoichiometric TiN and free from oxygen impurities. The x-ray diffraction and transmission electron microscope (TEM) results showed that the TiN films deposited at 600°C were single crystal in nature with epitaxial relationship TiN|| Si. The Rutherford baskscattering channeling yield for TiN films was found to be in the range of 10–13%. The epitaxy of Cu on TiN was found to be cube-on-cube, i.e., Cull<100>TiN||Si. The Cu/TiN and TiN/Si interfaces were found to be quite sharp without any indication of interfacial reaction. The growth mechanism of copper on TiN was found to be three-dimensional. We discuss domain matching epitaxy as a mechanism of growth in these large lattice mismatch systems, where three lattice constants of Si(5.43?) match with four of TiN(4.24?) and seven units of Cu(3.62?) match with six of the TiN. Thus, for next generation of device complementary metal oxide semiconductor structures, Cu/TiN/Si(100) contacts hold considerable promise, particularly since Cu is a low resistivity metal (1.6 μΩ-cm) and is considerably more resistant to electromigration than Al. The implications of these results in the fabrication of advanced microelectronic devices are discussed.     

125 MW 机高压前轴封漏汽量的测量计算及中压缸效率核算

介绍了莱芜电厂２号机改造后高压前轴封漏汽量测量原理和方法,计算出高压前轴封漏汽量,并代入热力性能试验计算过程中,核算了除掉轴封漏汽量影响的中压缸效率。此计算方法和图表普遍适用于１２５ＭＷ机组高压前轴封漏汽量的计算。     

莱芜发电厂2号机通流部分节能改造和热力性能考核试验

简要叙述了莱芜电厂２号机通流部分节能改造和改造前后的热力性能考核试验。根据改造前试验结果,分析了机组经济性差的原因。对比改造前后试验结果,分析了改造效果。     

X100钢级埋弧焊管焊缝局部拉伸强度和延性研究

为了研究X100钢级埋弧焊焊管不同区域的局部和整体拉伸行为的差异,通过拉伸试验比较了焊管不同区域的强度和延性性能,分析了其断裂行为及马氏体-奥氏体（M-A）对局部拉伸性能的影响,并结合显微组织、硬度试验及拉伸试验,分析焊后及再加热后热影响区的性能。结果表明,相比埋弧焊第2道焊道,焊道重叠区的热影响区表现出更高的屈服强度、抗拉强度、硬度、应变硬化和整体延性;焊道2和热影响区重叠区的断裂均发生在细晶热影响区（FGHAZ）处,重叠区FGHAZ中较高的M-A分数和较小颗粒间距促进了弥散强化,从而使该区域的强度更高;尽管重叠区试样的FGHAZ表现出比焊道2 FGHAZ高的整体应变,但其局部应变相对更低。     

100Gbit/s技术及应用分析

100Gbit/s已成为目前高速光通信技术的研究焦点。本文分别从发展现状、关键技术、技术应用等方面分别对100Gbit/s进行了分析与探讨,并对100Gbit/s技术的后续发展的展望。     

等离子体横向刻蚀硅的特性研究

研究了用SiO2 +Al作掩模 ,SF6 +O2 混合气体等离子体对Si的横向刻蚀 ,其结果表明 ,在SF6 +O2 等离子体气氛中 ,Al是很好的保护膜 ,可以在待悬浮器件下形成大的开孔。因此 ,预计用这种技术 ,可以在Si片上集成横向尺寸为数百微米 ,具有优良高频性能的MEMSRF/MW无源器件 ,如开关、传输线、电感和电容等。     

40G／100G标准化现状及发展趋势

随着40G技术的规模商用以及100G技术的逐渐成熟,40G/100G标准化与产业应用关系更为密切,本文分析了40G/100G技术现状和标准化进展,同时对40G/100G技术后续发展趋势进行了较深入的探讨。