ICAP-AES等离子体发射光谱法测定氧化铁粉的杂质元素

介绍了ICP等离子体光谱仪的原理及测定高纯氧化铁中铝、钙、硫、钾、镁、锰、钠和钛等8种杂质元素的分析方法，考察了样品的溶解方案及工作曲线的选择，确定了仪器最佳工作条件和方法检出限。     

Microwave plasma synthesis of TiN and ZrN nanopowders

This work demonstrates that TiN and ZrN nanopowders can be prepared by microwave plasma synthesis method. The effects of flow rate of plasma forming gas, flow rate of carrier gas and feeding rate of precursor raw material to the average particle size were studied. The TiN and ZrN nanopowders were characterized by means of transmission electron microscopy (TEM) and X-ray diffraction (XRD).     

低温等离子体对血管内金属支架的表面改性

生物材料用于人体必须要具备生物相容性。尤其是与血液相接触的材料如血管内支架必须要具备血液相容性。材料的表面特性直接影响血液系统中是否会出现血栓。本文针对金属血管内支架的表面特性、与血液的界面反应以及用于提高血液相容性的低温等离子表面改性进行了简要综述     

Preparation of Ultra—fine Aluminum Nitride in Thermal Plasma

Ultra-fine aluminum nitride has been synthesized by the evaporation of aluminum powder at atmospheric-pressure nitrogen plasma in a hot-wall reactor.The average size of aluminum nitride particle is 0.11μm measured by scanning electric mirror(SEM),and the purity is at least over90% evaluated by X-Ray diffraction(XRD).The conversion of Al powder to aluminum nitride is strongly depended on the injection of NH3.Typical experimental parameters such as the feed rate of raw material,the flow rate of ammonia and the position of injecting aluminum powder into the reactor are given.     

Instability of zeolite Y supported cobalt sulfide hydrotreating catalysts in the absence of H2S

Ion exchanged CoNaY was sulfided at 473 and 673 K and subsequently heated in He at 673 and 773 K. The resulting samples were characterized by means of overall sulfur analysis, temperature programmed Ar treatment and Fourier transform infrared spectroscopy. It was shown that during He flushing at sufficiently high temperature a protolysis reaction occurs resulting in the decomposition of Co sulfide into Co²⁺ ions and H₂S.     

非晶硅基薄膜的等离子体刻蚀光发射谱检测

本文研究了采用锁定放大相干检测技术的等离子体光发射谱检测系统。用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。分析了检测结果和刻蚀机理。     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

Synthesis and characterization of novel copolymers with the trimethylsilyl group for deep‐UV photoresists

N‐(4‐Acetoxyphenyl) maleimide (APMI) and three kinds of comonomers bearing a trimethylsilyl group were copolymerized at 60°C in the presence of azobisisobutyronitrile (AIBN) as an initiator in 1,4‐dioxane to obtain the three IP, IIP, and IIIP copolymers. These copolymers were removed from the acetoxy group in a transesterification process into new IVP, VP, and VIP copolymers with a pendant hydroxyl group. Two modified processes were adopted to prepare photoresists using these copolymers. The first process involved mixing the dissolution inhibitor, o‐nitrobenzyl cholate, with the new copolymers. Second, o‐nitrobenzyl cholate was introduced into the copolymers using 1,8‐diazabicyclo[5.4.0]undec‐7‐ene (DBU) in dimethylformamide (DMF). The cyclic maleimide structure is responsible for the high thermal stability of these copolymers. After irradiation using deep–UV light and development with aqueous Na₂CO₃ (0.01 wt %), the developed patterns showed positive images and exhibited good adhesion to the silicon wafer without using any adhesion promoter. The resolution of these resists was at least 0.8 μm and an oxygen‐plasma etching rate was 1/5.3 to that of hard‐baked HPR‐204. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 83: 2791–2798, 2002; DOI 10.1002/app.10255     

非平衡等离子体协同作用光催化剂催化降解苯

采用非平衡等离子体与光催化剂相结合,对苯的降解进行了实验研究。考察了以不同吸附能力的玻璃球和γ-Al2O3为载体对苯降解率、碳平衡、CO2选择性、NOx及O3生成量的影响;研究了以γ-Al2O3为载体时,水蒸气含量对苯的降解率、碳平衡、CO2选择性、NOx及O3生成量的影响。实验结果表明,以具有吸附性的γ-Al2O3为载体可提高苯的降解率;当能量密度为618J/L时,苯的降解率可达98%;同时可降低O3的生成量,但NOx生成量增加;以γ-Al2O3为载体时,随水蒸气含量的增加,苯的降解率降低,特别是在低能量密度时,水蒸气对苯降解率的影响更为显著,但水蒸气的加入可抑制O3的生成,同时可提高碳平衡值。